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IXYK140N120A4

Littelfuse

IXYK140N120A4 by Littelfuse

The Littelfuse IXYK140N120A4 is an N-CHANNEL IGBT with 1200V VCEsat, 480A IC, and 1500W power dissipation. Ideal for POWER CONTROL applications, it has a turn-off time of 1240ns and operates b/w -55°C to 175°C.

Median Price

$45.300

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 174 parts In-Stock

1+ parts

$32.930

100+ parts

$26.990

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174

$32.930

$26.990

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Mouser Electronics

USA . 2,915 parts In-Stock

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$43.980

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$43.980

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Newark

USA . 272 parts In-Stock

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$45.300

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$34.270

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272

$45.300

$34.270

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DigiKey

USA . 424 parts In-Stock

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$46.620

100+ parts

$30.439

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424

$46.620

$30.439

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Element14

Singapore . 174 parts In-Stock

1+ parts

$63.590

100+ parts

$49.820

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174

$63.590

$49.820

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 331 parts In-Stock

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$31.710

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331

$31.710

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Continental Prestige Electronics

USA . 28 parts In-Stock

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$32.100

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$26.000

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28

$32.100

$26.000

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Microchip USA

USA . 5,127 parts In-Stock

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$92.299

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5,127

$92.299

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Argo Parts USA

USA . 1,706 parts In-Stock

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1,706

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Experience the power of innovation with the IXYK140N120A4 from Littelfuse. As a leader in the industry, Littelfuse brings you a high-quality Insulated Gate Bipolar Transistor designed for power control applications. This N-CHANNEL transistor offers a maximum VCEsat of 1.7V and a maximum Collector-Emitter Voltage of 1200V, making it a reliable choice for your projects. With a maximum power dissipation of 1500W and quick turn on/off times, this transistor delivers optimal performance. Upgrade your power control systems with the IXYK140N120A4 and experience unparalleled efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state resistance and faster switching speeds, making them efficient for power control applications.

Maximum VCEsat: 1.7 V

Low VCEsat reduces power losses and improves efficiency in power control operations.

Nominal Turn Off Time (toff): 1240 ns

The relatively fast turn-off time helps in effective control and regulation of power flow.

Maximum Power Dissipation (Abs): 1500 W

High power dissipation capacity allows the transistor to handle large amounts of power without overheating.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even in demanding conditions.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage rating makes this transistor suitable for high-power applications.

Maximum Collector Current (IC): 480 A

High collector current rating enables the transistor to handle large current loads efficiently.

Nominal Turn On Time (ton): 86 ns

Fast turn-on time allows for quick switching and precise control in power management tasks.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYK140N120A4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1240 ns

Nominal Turn On Time (ton):

86 ns

Maximum VCEsat:

1.7 V

Trade Compliance

IXYK140N120A4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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