Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Maximum Collector Current (IC): 3.2 A; Terminal Position: SINGLE;
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Modulus Dynamics
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$38.290
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Corphita
Insulated Gate Bipolar Transistors (IGBT) IKB01N120H2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Additional Features:
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JESD-609 Code:
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IKB01N120H2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
MBRA340T3G
Onsemi
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
SMBJ18CA
Eic Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
LM317TG
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
1N4148WT
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
1N4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
EU2B-YS3203F
Idec
ROTARY SWITCH;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
BAT54SLT1G
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
LL4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
Pro-an Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
ERJ3GEY0R00V
Panasonic
ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
FZ400R12KE4HOSA1
Infineon Technologies
FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.
FGH40N60SFDTU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR;
IGD06N60TATMA1
Infineon's IGD06N60TATMA1 is an N-CHANNEL IGBT with 600V VCE, 6A IC, and 17ns ton. It is a surface-mount device in a plastic package suitable for high-speed switching applications.
IRG4PH30KDPBF
IRG4PH30KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 100W. It is designed for MOTOR CONTROL applications, featuring a single configuration with built-in diode and fast switching times (tr: 84ns, tf: 140ns).
IRGB4062DPBF
IRGB4062DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 250W. It has a single configuration with built-in diode, ideal for power control applications requiring fast switching times (tr: 31ns, tf: 41ns).
STGP30H60DFB
STMicroelectronics
STMicroelectronics' STGP30H60DFB is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
IRGP35B60PDPBF
IRGP35B60PDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max current of 60A. It has a power dissipation of 308W and is designed for power control applications, featuring a single configuration with built-in diode. With fast rise time (tr) of 11ns and fall time (tf) of 16ns, it operates at temperatures up to 150°C.
IRG7PH42UD-EP
IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.
IXXX100N60C3H1
Littelfuse
The Littelfuse IXXX100N60C3H1 is an N-CHANNEL IGBT with a max VCEsat of 2.2V and IC of 170A, ideal for POWER CONTROL applications. It has a package style of IN-LINE, operating temperature range from -55 to 150 °C, and a turn-off time of 220ns.
APT150GN60JDQ4
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 536 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;
APT45GP120J
APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
IRGP4266DPBF
Infineon's IRGP4266DPBF is an N-CHANNEL IGBT with tr of 90ns and tf of 80ns. It boasts a max power dissipation of 455W, ideal for high-power applications. With Vce(max) at 650V and Ic(max) at 140A, it's suitable for industrial motor drives and renewable energy systems.
FF450R12ME4EB11BPSA1
FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
2MBI150NC-120
Collmer Semiconductor
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT; Surface Mount: NO; Maximum Collector Current (IC): 150 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;
FF450R12ME4PBOSA1
FF450R12ME4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 675A, and turn-off time of 740ns. Ideal for applications requiring high power switching in industrial settings.
APT85GR120JD60
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
SKM400GB126D
Semikron International
Semikron International's SKM400GB126D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it ensures efficient performance. With fast Nominal Turn Off Time (toff) of 760ns, this device operates in temperatures ranging from -40 to 150 °C, making it suitable for various industrial power systems.
FGL60N100BNTDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
IXYH50N120C3D1
Littelfuse IXYH50N120C3D1 is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 625W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 150 °C.
FS50R06W1E3BOMA1
Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
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IKB03N120H2ATMA1
Infineon's IKB03N120H2ATMA1 is an N-CHANNEL IGBT with 1200V VCE, 9.6A IC, and 403ns toff. Ideal for power control applications, it features a built-in diode in a small outline package for surface mount assembly.
IKB03N120H2XT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IKB06N60TATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
IKB01N120H2-E3045A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Maximum Collector Current (IC): 1.3 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 3.9 V;
IKB03N120H2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Collector Current (IC): 9.6 A; Nominal Turn On Time (ton): 16.1 ns;
IKB03N120H2-E3045A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Collector Current (IC): 9.6 A; JEDEC-95 Code: TO-263AB;
IKB06N60T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 600 V;
IKB06N60TXT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Maximum Operating Temperature: 175 Cel; No. of Elements: 1;
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