Loading...

IKB03N120H2XT

Infineon Technologies

IKB03N120H2XT by Infineon Technologies

Infineon Technologies' IKB03N120H2XT is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 9.6A max collector current. It features a built-in diode, 403ns turn-off time, and 16.1ns turn-on time for power control applications requiring fast switching capabilities in a small outline package.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 521 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

521

-

-

-

-

Vyrian

USA . 203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

203

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,662 parts In-Stock

1+ parts

$1.250

100+ parts

-

1k+ parts

-

10k+ parts

-

2,662

$1.250

-

-

-

Corohmni

South Africa . 279 parts In-Stock

1+ parts

$1.426

100+ parts

-

1k+ parts

-

10k+ parts

-

279

$1.426

-

-

-

Modulus Dynamics

Lithuania . 7,211 parts In-Stock

1+ parts

$1.778

100+ parts

$1.707

1k+ parts

$1.636

10k+ parts

-

7,211

$1.778

$1.707

$1.636

-

AZTECH Wire

Italy . 642 parts In-Stock

1+ parts

$13.566

100+ parts

-

1k+ parts

-

10k+ parts

-

642

$13.566

-

-

-

Ampacity Inc.

Singapore . 962 parts In-Stock

1+ parts

$29.050

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$29.050

-

-

-

Argo Parts USA

USA . 3,092 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,092

-

-

-

-

Corphita

USA . 792 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

792

-

-

-

-

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Continental Prestige Electronics

USA . 414 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

414

-

-

-

-

Overview

Unlock the power of precise power control with the IKB03N120H2XT by Infineon Technologies. Crafted with superior quality and cutting-edge technology, this Insulated Gate Bipolar Transistor is designed for maximum performance and efficiency. Ideal for a wide range of applications, this N-CHANNEL transistor boasts a single configuration with a built-in diode for added convenience. Experience seamless operation and enhanced reliability with this surface-mount transistor that offers exceptional value and benefits to customers seeking top-notch power control solutions. Elevate your projects with the IKB03N120H2XT and unleash its full potential today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides excellent insulation properties, reducing the risk of electrical failures and improving reliability.

Polarity or Channel Type: N-CHANNEL

N-channel type offers higher electron mobility and faster switching speeds, making it suitable for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse current, improving efficiency and reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in high-power circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and improving thermal performance.

Package Shape: RECTANGULAR

Rectangular shape is ideal for space-saving designs and efficient heat dissipation, improving overall system performance.

Nominal Turn Off Time (toff): 403 ns

Short turn-off time allows for fast switching speeds, reducing power losses and improving circuit efficiency.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating enables the transistor to handle high-power applications with ease, increasing overall system robustness.

Transistor Element Material: SILICON

Silicon material offers high reliability, temperature resistance, and excellent performance characteristics, ensuring long-term stability and efficiency.

Maximum Collector Current (IC): 9.6 A

High maximum collector current rating allows for handling of high current loads, making it suitable for power control applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and improves overall system reliability.

Case Connection: COLLECTOR

Direct connection to the collector allows for efficient heat dissipation and improved thermal management, enhancing overall system performance.

Nominal Turn On Time (ton): 16.1 ns

Short turn-on time ensures fast switching speeds, enabling precise power control and high efficiency in power electronic applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKB03N120H2XT attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

403 ns

Nominal Turn On Time (ton):

16.1 ns

Trade Compliance

IKB03N120H2XT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8