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IKA06N60T

Infineon Technologies

IKA06N60T by Infineon Technologies

IKA06N60T by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 10A. It has a nominal turn-off time of 249ns, making it suitable for power control applications requiring high efficiency and fast switching capabilities. The package style is flange mount with through-hole terminals, ideal for isolated case connections in various electronic systems.

Median Price

$2.150

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 990 parts In-Stock

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$2.150

100+ parts

$0.932

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$0.662

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990

$2.150

$0.932

$0.662

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Distributors (In-Stock)

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Digiode

USA . 924 parts In-Stock

1+ parts

$1.615

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-

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924

$1.615

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Vyrian

USA . 723 parts In-Stock

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$1.700

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723

$1.700

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Distributors (Availability)

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Corphita

USA . 815 parts In-Stock

1+ parts

$1.530

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815

$1.530

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Modulus Dynamics

Lithuania . 22,085 parts In-Stock

1+ parts

$1.664

100+ parts

$1.597

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$1.531

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22,085

$1.664

$1.597

$1.531

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Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$59.300

100+ parts

-

1k+ parts

$41.508

10k+ parts

$41.508

1,200

$59.300

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$41.508

$41.508

A-Z Elektronik GmbH

Germany . 5,772 parts In-Stock

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5,772

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Alle Elektronik GmbH

Germany . 3,848 parts In-Stock

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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GlobX GmbH

Germany . 1,699 parts In-Stock

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1,699

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Perfect Parts

USA . 512 parts In-Stock

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512

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Overview

Upgrade your power control systems with the high-quality IKA06N60T Insulated Gate Bipolar Transistor by Infineon Technologies. This N-channel transistor, featuring a single configuration with a built-in diode, is designed for maximum performance and efficiency in various applications. With a maximum collector-emitter voltage of 600V and a nominal turn-off time of 249ns, this product offers superior power dissipation capabilities. Trust in Infineon's expertise and invest in the IKA06N60T for reliable and optimized power control solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the product, ensuring a longer lifespan and better performance.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs generally have lower on-state resistance and higher current capabilities, making them efficient for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against reverse current flow, making the product more versatile and efficient.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for handling high power levels with precision and efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronic devices and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, reducing the risk of potential failures or malfunctions.

Maximum Power Dissipation (Abs): 28 W

With a high maximum power dissipation, this IGBT can handle heavy loads and operate efficiently under demanding conditions.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance even in harsh environments or high-temperature situations.

Maximum Collector-Emitter Voltage: 600 V

With a high voltage rating, this IGBT can safely handle high voltage levels, making it suitable for a wide range of applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage ensures proper gate control and protection, preventing damage to the IGBT during operation.

Maximum Collector Current (IC): 10 A

The high maximum collector current allows the IGBT to handle large power loads without overheating or compromising performance.

Maximum Gate-Emitter Threshold Voltage: 5.7 V

The gate-emitter threshold voltage ensures proper switching behavior and reduces power losses during operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKA06N60T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

HIGH SPEED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

249 ns

Nominal Turn On Time (ton):

17 ns

Trade Compliance

IKA06N60T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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