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CY14B256LA-SP45XI

Infineon Technologies

CY14B256LA-SP45XI by Infineon Technologies

Infineon Technologies' CY14B256LA-SP45XI is a non-volatile SRAM with 32Kx8 organization and 262144-bit memory density. It operates at a voltage of 3V and has a max access time of 45ns. This SRAM is suitable for industrial applications requiring reliable and fast non-volatile memory storage.

Median Price

$13.900

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 98 parts In-Stock

1+ parts

$13.211

100+ parts

$12.140

1k+ parts

$11.797

10k+ parts

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98

$13.211

$12.140

$11.797

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Newark

USA . 34 parts In-Stock

1+ parts

$13.830

100+ parts

$10.690

1k+ parts

$9.080

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34

$13.830

$10.690

$9.080

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Chip1Stop

Japan . 610 parts In-Stock

1+ parts

$18.300

100+ parts

-

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610

$18.300

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Mouser Electronics

USA . 831 parts In-Stock

1+ parts

$18.340

100+ parts

$15.580

1k+ parts

$15.130

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831

$18.340

$15.580

$15.130

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DigiKey

USA . 534 parts In-Stock

1+ parts

$20.110

100+ parts

$17.504

1k+ parts

$16.182

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534

$20.110

$17.504

$16.182

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Flip Electronics (Authorized)

USA . 1,366 parts In-Stock

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1,366

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Rochester

USA . 485 parts In-Stock

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$11.120

1k+ parts

$9.950

10k+ parts

$9.370

485

-

$11.120

$9.950

$9.370

Verical

USA . 416 parts In-Stock

1+ parts

-

100+ parts

$13.900

1k+ parts

$12.438

10k+ parts

$11.713

416

-

$13.900

$12.438

$11.713

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 813 parts In-Stock

1+ parts

$9.414

100+ parts

-

1k+ parts

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813

$9.414

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Nova Conductors

Japan . 83 parts In-Stock

1+ parts

$12.025

100+ parts

-

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83

$12.025

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Chip Stock

USA . 6,300 parts In-Stock

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6,300

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Flip Electronics

USA . 766 parts In-Stock

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766

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Vyrian

USA . 61 parts In-Stock

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61

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Electronics Depot

USA . 8 parts In-Stock

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8

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J2 Sourcing AB

Sweden . 4 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 504 parts In-Stock

1+ parts

$3.473

100+ parts

$3.334

1k+ parts

$3.195

10k+ parts

-

504

$3.473

$3.334

$3.195

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Ampacity Inc.

Singapore . 95 parts In-Stock

1+ parts

$8.420

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95

$8.420

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Corphita

USA . 292 parts In-Stock

1+ parts

$8.918

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292

$8.918

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Continental Prestige Electronics

USA . 34 parts In-Stock

1+ parts

$9.620

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$6.870

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34

$9.620

$6.870

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Component Stockers USA

USA . 712 parts In-Stock

1+ parts

$11.290

100+ parts

$9.650

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712

$11.290

$9.650

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Netroflash

USA . 500 parts In-Stock

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$12.025

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$12.025

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QUARKTWIN TECHNOLOGY LTD

USA . 6,047 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,787 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Alle Elektronik GmbH

Germany . 3,191 parts In-Stock

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Argo Parts USA

USA . 502 parts In-Stock

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Perfect Parts

USA . 170 parts In-Stock

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Metaverse IC Inc.

Canada . 150 parts In-Stock

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Kepictronics

USA . 99 parts In-Stock

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Glotronic Ltd.

UK . 96 parts In-Stock

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Overview

Discover the CY14B256LA-SP45XI, a high-quality product by Infineon Technologies that is revolutionizing the SRAM category. With its advanced technology and reliable performance, this product offers exceptional value and benefits to customers. Whether it's for industrial or commercial applications, this non-volatile SRAM provides optimal memory density of 262144 bits and a maximum access time of just 45 ns. With Infineon Technologies' expertise and dedication to quality, you can trust that the CY14B256LA-SP45XI will exceed your expectations and enhance your projects. Experience the advantages of this cutting-edge solution and unlock new possibilities for your business.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's package body material of plastic/epoxy provides durability and protection for the SRAM, making it a reliable choice for various applications.

Surface Mount: YES

With the surface mount feature, this SRAM can be easily soldered onto a PCB, simplifying the assembly process and making it suitable for compact designs.

No. of Functions: 1

Featuring a single function, this SRAM focuses on delivering high-speed and efficient memory storage for the desired application.

Package Shape: RECTANGULAR

The rectangular package shape of this SRAM allows for easier integration into electronic systems and helps optimize space utilization.

Operating Mode: ASYNCHRONOUS

With the asynchronous operating mode, this SRAM provides independent access to its memory cells, enabling faster read and write operations.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V ensures compatibility with standard power requirements, making this SRAM suitable for a wide range of devices and systems.

Power Supplies (V): 3/3.3

Supporting both 3V and 3.3V power supplies, this SRAM offers flexibility and compatibility with various voltage levels, enhancing its versatility.

No. of Terminals: 48

With 48 terminals, this SRAM provides ample connectivity options, allowing seamless integration into complex circuits and systems.

Package Style (Meter): SMALL OUTLINE, SHRINK PITCH

The small outline package style with a shrink pitch ensures a compact footprint, making it an ideal choice for space-constrained applications without compromising performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM can withstand high-temperature environments, ensuring reliable operation in demanding conditions.

Organization: 32KX8

This SRAM's organization of 32KX8 means it can store 32,768 words with each word consisting of 8 bits, providing ample memory capacity for data-intensive applications.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures down to -40°C, this SRAM is suitable for use in a wide range of environments and applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish of nickel palladium gold ensures excellent conductivity and corrosion resistance, enhancing the reliability and longevity of this SRAM.

Terminal Position: DUAL

With dual terminal position, this SRAM offers flexibility in PCB layout, enabling efficient routing and easy integration into the overall system design.

Maximum Seated Height: 2.794 mm

Featuring a maximum seated height of 2.794 mm, this SRAM is well-suited for designs where height restrictions are a concern while still delivering high-performance memory capabilities.

Width: 7.5057 mm

With a width of 7.5057 mm, this SRAM has a compact form factor, enabling it to be implemented in size-constrained applications without sacrificing functionality.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage requirement of 2.7V allows this SRAM to operate efficiently with lower power consumption, making it an energy-efficient choice.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow processes during assembly, maintaining the integrity and reliability of the SRAM.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this SRAM withstands soldering processes, ensuring secure connections and robust performance.

Length: 15.875 mm

Measuring 15.875 mm in length, this SRAM can be easily accommodated within various designs, making it a versatile choice for different applications.

Temperature Grade: INDUSTRIAL

This SRAM's industrial temperature grade ensures reliable operation and performance across a wide temperature range, making it suitable for industrial and harsh environments.

Technology: CMOS

Built using CMOS technology, this SRAM offers low power consumption, high-speed operation, and enhanced reliability, making it an optimal choice for various applications.

Parallel or Serial: PARALLEL

With parallel data transfer capability, this SRAM allows for fast and simultaneous reading and writing of data, facilitating efficient data processing.

Terminal Form: GULL WING

The gull wing terminal form makes soldering and mounting of this SRAM hassle-free, ensuring secure connections and easy integration into electronic systems.

Maximum Supply Current: 70 mA

This SRAM requires a maximum supply current of 70 mA, ensuring efficient power usage while delivering reliable and high-performance memory operations.

No. of Words: 32768 words

With 32,768 words of memory capacity, this SRAM can store a large amount of data, making it suitable for applications requiring extensive memory storage.

Memory Width: 8

Featuring a memory width of 8 bits, this SRAM allows for efficient data transfers, enabling quick access to stored information.

Terminal Pitch: 0.635 mm

With a terminal pitch of 0.635 mm, this SRAM offers versatility in PCB design and allows for precise connections, ensuring reliable performance in complex systems.

No. of Words Code: 32K

The "32K" code signifies that this SRAM has a memory capacity of 32,768 words, providing ample space for storing essential data.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this SRAM can withstand moderate moisture exposure, ensuring extended shelf life and reliability during handling and assembly.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this SRAM offers flexibility in power requirements, accommodating various voltage levels without compromising performance.

Memory Density: 262144 bit

This SRAM boasts a memory density of 262,144 bits, providing ample storage capacity for data-intensive applications, making it a reliable choice for demanding memory requirements.

Memory IC Type: NON-VOLATILE SRAM

Being a non-volatile SRAM, this memory IC retains stored data even when power is removed, ensuring data integrity and eliminating the need for data backup.

Maximum Standby Current: 0.005 Amp

Requiring a maximum standby current of 0.005 Amp, this SRAM offers energy-saving capabilities by minimizing power consumption during idle periods.

Maximum Access Time: 45 ns

With a maximum access time of 45 nanoseconds, this SRAM provides fast and efficient data retrieval, enabling quick processing and response times in memory-intensive applications.

Technical Specifications

SRAM CY14B256LA-SP45XI attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

15.875 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.794 mm

Maximum Standby Current:

.005 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5057 mm

Trade Compliance

CY14B256LA-SP45XI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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