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BC807-16E6327

Infineon Technologies

BC807-16E6327 by Infineon Technologies

BC807-16E6327 by Infineon: PNP BJT with 45V VCEO, 0.5A IC, and 200MHz fT. Ideal for small signal amplification in compact electronic devices due to its single configuration and small outline package style.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 432,000 parts In-Stock

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-

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$0.034

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$0.028

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$0.025

432,000

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$0.034

$0.028

$0.025

Verical

USA . 409,000 parts In-Stock

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Farnell

UK . 93,000 parts In-Stock

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$0.034

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$0.034

Distributors (In-Stock)

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Nova Conductors

Japan . 85 parts In-Stock

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$0.025

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85

$0.025

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Digiode

USA . 325 parts In-Stock

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$0.027

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325

$0.027

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American Microsemiconductor Inc.

USA . 3,000 parts In-Stock

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$0.130

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3,000

$0.130

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Vyrian

USA . 159,590 parts In-Stock

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MISTER SPROCKETS

USA . 90,000 parts In-Stock

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DigiKey Marketplace

USA . 45,000 parts In-Stock

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Cogito LLC

Ukraine . 12,399 parts In-Stock

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12,399

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Zilex Electronics Inc.

Canada . 6,000 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 4,350 parts In-Stock

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4,350

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LIBRA Elektronik GmbH

Germany . 2,811 parts In-Stock

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VNN

France . 2,331 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 244,699 parts In-Stock

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$0.024

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244,699

$0.024

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Continental Prestige Electronics

USA . 1,846 parts In-Stock

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$0.025

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$0.024

1,846

$0.025

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$0.024

Argo Parts USA

USA . 1,583 parts In-Stock

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$0.025

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$0.024

1,583

$0.025

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$0.024

Netroflash

USA . 1,000 parts In-Stock

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$0.025

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$0.024

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1,000

$0.025

$0.024

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Corphita

USA . 815 parts In-Stock

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$0.025

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815

$0.025

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Component Stockers USA

USA . 591,172 parts In-Stock

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$0.030

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$0.030

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$0.020

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$0.020

591,172

$0.030

$0.030

$0.020

$0.020

Modulus Dynamics

Lithuania . 22,165 parts In-Stock

1+ parts

$0.709

100+ parts

$0.681

1k+ parts

$0.652

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22,165

$0.709

$0.681

$0.652

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Andel Nordic

Denmark . 2,242 parts In-Stock

1+ parts

$43.510

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$30.455

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$30.455

2,242

$43.510

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$30.455

$30.455

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,113 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,090 parts In-Stock

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Lixinc

USA . 6,154 parts In-Stock

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Microchip USA

USA . 4,774 parts In-Stock

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Assy Fe

Spain . 4,670 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Overview

Enhance your electronic designs with the BC807-16E6327 by Infineon Technologies, a high-quality small signal Bipolar Junction Transistor. Manufactured by a trusted industry leader, this PNP transistor offers reliable performance and versatility in a compact, surface mount package. Ideal for a wide range of applications, this transistor provides customers with superior efficiency and precision in their circuit designs. Trust in the value and benefits of the BC807-16E6327 to elevate your projects to new levels of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

Being a PNP transistor, it allows for easier circuit design and higher efficiency in certain applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Surface Mount: YES

The surface mount feature makes it easier to install and saves valuable space on a PCB.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and secure mounting on a circuit board.

Terminal Form: GULL WING

The gull-wing terminals provide a strong and reliable connection, ensuring stable performance.

No. of Terminals: 3

With 3 terminals, this transistor offers versatility in circuit design and connection options.

Maximum Power Dissipation (Abs): 0.33 W

The low power dissipation rating ensures the transistor operates efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 60

The high minimum DC current gain ensures consistent and reliable amplification in various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance and reliability.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate to high power applications.

Terminal Finish: MATTE TIN

The matte tin finish provides a reliable and corrosion-resistant terminal surface for optimal performance.

Terminal Position: DUAL

The dual terminal position allows for flexible placement and connection options in a circuit design.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures stable performance during soldering and assembly processes.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-16E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC807-16E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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