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HGTP10N40E1

Harris Semiconductor

HGTP10N40E1 by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 10 A; Transistor Application: POWER CONTROL;

Median Price

$1.395

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 267 parts In-Stock

1+ parts

-

100+ parts

$1.370

1k+ parts

$1.140

10k+ parts

$1.020

267

-

$1.370

$1.140

$1.020

DigiKey

USA . 267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.420

10k+ parts

-

267

-

-

$1.420

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 4,380 parts In-Stock

1+ parts

$7.020

100+ parts

-

1k+ parts

-

10k+ parts

-

4,380

$7.020

-

-

-

Supply Digital

USA . 2,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,520

-

-

-

-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP10N40E1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Maximum Fall Time (tf):

1000 ns

Maximum Gate-Emitter Threshold Voltage:

4.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

60 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

50 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

400 ns

Maximum Turn On Time (ton):

50 ns

Maximum VCEsat:

3.2 V

Trade Compliance

HGTP10N40E1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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