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FGPF30N30TDTU

Fairchild Semiconductor

FGPF30N30TDTU by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 44.6 W; Nominal Turn On Time (ton): 55 ns; JESD-30 Code: R-PSFM-T3;

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,355 parts In-Stock

1+ parts

-

100+ parts

$1.070

1k+ parts

$0.888

10k+ parts

$0.792

1,355

-

$1.070

$0.888

$0.792

Farnell

UK . 1,355 parts In-Stock

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$0.799

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1,355

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$0.799

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Verical

USA . 1,355 parts In-Stock

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$1.110

10k+ parts

$0.990

1,355

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-

$1.110

$0.990

Distributors (In-Stock)

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Vyrian

USA . 224 parts In-Stock

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$0.799

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224

$0.799

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Digiode

USA . 949 parts In-Stock

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$0.834

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949

$0.834

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Distributors (Availability)

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Corphita

USA . 937 parts In-Stock

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$0.790

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937

$0.790

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Component Stockers USA

USA . 1,686 parts In-Stock

1+ parts

$0.890

100+ parts

$0.830

1k+ parts

$0.750

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-

1,686

$0.890

$0.830

$0.750

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Microchip USA

USA . 199 parts In-Stock

1+ parts

$5.460

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199

$5.460

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Continental Prestige Electronics

USA . 1,355 parts In-Stock

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$1.050

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$1.050

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Supply Digital

USA . 197 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGPF30N30TDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

300 V

Maximum Fall Time (tf):

300 ns

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

400 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

FGPF30N30TDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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