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ZTX855STZ

Diodes Incorporated

ZTX855STZ by Diodes Incorporated

ZTX855STZ by Diodes Inc. is a NPN BJT transistor with max. Vce of 150V and Ic of 4A, ideal for switching applications. Featuring hFE of 35 and fT of 90MHz, it comes in a plastic package with matte tin finish, suitable for various electronic designs requiring high-speed switching capabilities.

Median Price

$0.434

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,000 parts In-Stock

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$0.434

2,000

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$0.434

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.493

100+ parts

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100

$0.493

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Chip Stock

USA . 23,500 parts In-Stock

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23,500

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Vyrian

USA . 1,814 parts In-Stock

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1,814

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,856 parts In-Stock

1+ parts

$0.330

100+ parts

$0.322

1k+ parts

$0.320

10k+ parts

-

1,856

$0.330

$0.322

$0.320

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Ampacity Inc.

Singapore . 1,546 parts In-Stock

1+ parts

$0.330

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1,546

$0.330

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Argo Parts USA

USA . 2,552 parts In-Stock

1+ parts

$0.493

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$0.478

2,552

$0.493

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-

$0.478

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.493

100+ parts

$0.483

1k+ parts

$0.468

10k+ parts

$0.458

1,000

$0.493

$0.483

$0.468

$0.458

Continental Prestige Electronics

USA . 752 parts In-Stock

1+ parts

$0.493

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-

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$0.483

752

$0.493

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$0.483

Aztec Data Supply Inc.

USA . 809 parts In-Stock

1+ parts

$1.265

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809

$1.265

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Corohmni

South Africa . 242 parts In-Stock

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$1.968

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242

$1.968

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Component Stockers USA

USA . 4,812 parts In-Stock

1+ parts

$6.770

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4,812

$6.770

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Kepictronics

USA . 114,000 parts In-Stock

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RC Electronics

USA . 7,200 parts In-Stock

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$0.520

1k+ parts

$0.490

10k+ parts

$0.480

7,200

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$0.520

$0.490

$0.480

Overview

Enhance the power and efficiency of your electronic devices with the ZTX855STZ by Diodes Incorporated. Manufactured with precision and expertise, this NPN power bipolar junction transistor offers incredible switching capabilities for a wide range of applications. With a maximum collector-emitter voltage of 150V and a peak reflow temperature of 260°C, this transistor ensures reliable performance under various conditions. Trust in Diodes Incorporated to deliver high-quality components that elevate the functionality of your products. Upgrade your designs today with the ZTX855STZ and experience unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good insulation and can help protect the transistor from external damage, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely applicable.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, offering ease of use for designing electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable performance in circuits that require rapid switching between on and off states.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting on circuit boards and efficient use of space within electronic devices.

Terminal Form: WIRE

Wire terminals offer simple and reliable connections, facilitating easy soldering and integration into circuits.

Maximum Collector-Emitter Voltage: 150V

With a high collector-emitter voltage rating, this transistor can handle higher voltage applications, providing a wider range of operating conditions.

Maximum Collector Current (IC): 4A

A high collector current rating allows the transistor to handle larger current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 90MHz

The high transition frequency indicates that this transistor can operate at high frequencies, making it suitable for applications that require fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX855STZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX855STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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