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ZTX857STOB

Diodes Incorporated

ZTX857STOB by Diodes Incorporated

ZTX857STOB by Diodes Inc. is a NPN BJT transistor with hFE of 15, VCE of 300V, and IC of 3A. Ideal for switching applications due to its high transition frequency of 80MHz. Its single configuration and wire terminals make it suitable for various power electronics projects.

Median Price

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Lifecycle Status

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2

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< 1k

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Vyrian

USA . 229 parts In-Stock

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229

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Corohmni

South Africa . 364 parts In-Stock

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$1.475

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364

$1.475

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Aztec Data Supply Inc.

USA . 1,711 parts In-Stock

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$1.614

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$1.614

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AZTECH Wire

Italy . 332 parts In-Stock

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$14.734

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332

$14.734

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Semicontronic

India . 1,091 parts In-Stock

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$24.050

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$23.449

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$23.328

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1,091

$24.050

$23.449

$23.328

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Component Stockers USA

USA . 313 parts In-Stock

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$99.990

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313

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Argo Parts USA

USA . 2,101 parts In-Stock

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2,101

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 240 parts In-Stock

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Overview

Upgrade your electronic devices with the ZTX857STOB from Diodes Incorporated, a leading manufacturer in the industry. This NPN Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 300V and a high DC current gain of 15. With a durable plastic/epoxy package body, this transistor ensures reliable performance in various electronic circuits. Trust Diodes Incorporated to deliver quality products that meet your power needs efficiently. Experience the difference with the ZTX857STOB and revolutionize your electronic designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy packaging provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for a wide range of electronic circuits and devices.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in controlling electronic signals.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in electronic circuits, making it convenient for use in different types of devices.

Terminal Form: WIRE

Wire terminals provide secure connections and easy soldering, ensuring reliable electrical conductivity and stability in circuit connections.

No. of Terminals: 3

Three terminals offer flexibility in circuit configurations and applications, allowing for versatile use in different types of electronic designs.

Package Style (Meter): IN-LINE

Inline package style simplifies circuit layout and organization, making it easier to design and assemble electronic systems with this transistor.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures sufficient amplification of input signals, providing reliable and stable transistor performance in various applications.

Maximum Collector-Emitter Voltage: 300 V

With a maximum collector-emitter voltage of 300 V, this transistor can handle higher voltage levels, making it suitable for use in diverse power supply and control circuits.

Transistor Element Material: SILICON

Silicon transistor element offers high performance and reliability, ensuring consistent operation and durability in demanding electronic applications.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows for efficient power handling and current flow, making this transistor suitable for driving various loads and components.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good solderability and corrosion resistance, enhancing the durability and longevity of the transistor in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and wiring, making it easy to integrate this transistor into electronic designs with minimal complexity.

Nominal Transition Frequency (fT): 80 MHz

With a nominal transition frequency of 80 MHz, this transistor offers high-speed performance in switching applications, ensuring fast response times and efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX857STOB attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX857STOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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