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ZTX857STZ

Diodes Incorporated

ZTX857STZ by Diodes Incorporated

ZTX857STZ by Diodes Inc. is a NPN BJT transistor with max. Vce of 300V and max. Ic of 3A, ideal for switching applications. It has a min hFE of 15 and fT of 80MHz, housed in a plastic/epoxy package with matte tin finish and wire terminals.

Median Price

$1.273

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,398 parts In-Stock

1+ parts

$1.273

100+ parts

$0.814

1k+ parts

$0.528

10k+ parts

-

2,398

$1.273

$0.814

$0.528

-

Farnell

UK . 2,398 parts In-Stock

1+ parts

$1.404

100+ parts

$0.795

1k+ parts

$0.491

10k+ parts

$0.481

2,398

$1.404

$0.795

$0.491

$0.481

Mouser Electronics

USA . 10,817 parts In-Stock

1+ parts

$1.790

100+ parts

$0.734

1k+ parts

$0.550

10k+ parts

$0.470

10,817

$1.790

$0.734

$0.550

$0.470

Newark

USA . 2,176 parts In-Stock

1+ parts

$1.950

100+ parts

$0.808

1k+ parts

$0.602

10k+ parts

-

2,176

$1.950

$0.808

$0.602

-

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.503

4,000

-

-

-

$0.503

RS (Exports)

UK . 2,310 parts In-Stock

1+ parts

-

100+ parts

$1.012

1k+ parts

$0.934

10k+ parts

-

2,310

-

$1.012

$0.934

-

DigiKey

USA . 1,959 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.553

1,959

-

-

-

$0.553

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.572

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.572

-

-

-

Chip Stock

USA . 47,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

47,000

-

-

-

-

Vyrian

USA . 3,527 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,527

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,512 parts In-Stock

1+ parts

$0.382

100+ parts

$0.372

1k+ parts

$0.371

10k+ parts

-

3,512

$0.382

$0.372

$0.371

-

Continental Prestige Electronics

USA . 3,051 parts In-Stock

1+ parts

$0.572

100+ parts

-

1k+ parts

-

10k+ parts

$0.561

3,051

$0.572

-

-

$0.561

Argo Parts USA

USA . 1,887 parts In-Stock

1+ parts

$0.572

100+ parts

-

1k+ parts

-

10k+ parts

$0.555

1,887

$0.572

-

-

$0.555

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.572

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.572

-

-

-

Aztec Data Supply Inc.

USA . 199 parts In-Stock

1+ parts

$1.677

100+ parts

-

1k+ parts

-

10k+ parts

-

199

$1.677

-

-

-

Corohmni

South Africa . 161 parts In-Stock

1+ parts

$1.957

100+ parts

-

1k+ parts

-

10k+ parts

-

161

$1.957

-

-

-

Microchip USA

USA . 3,801 parts In-Stock

1+ parts

$3.271

100+ parts

-

1k+ parts

-

10k+ parts

-

3,801

$3.271

-

-

-

Perfect Parts

USA . 51,942 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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51,942

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 8,696 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,696

-

-

-

-

iodParts Technologies Inc.

India . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,000

-

-

-

-

Overview

Experience the superior performance and reliability of the ZTX857STZ by Diodes Incorporated, a leading manufacturer known for delivering top-quality components. This Power Bipolar Junction Transistor (BJT) is designed for switching applications, offering a maximum collector-emitter voltage of 300V and a maximum collector current of 3A. With a minimum DC current gain of 15 and a nominal transition frequency of 80MHz, this NPN transistor provides unmatched efficiency and stability. Whether you're looking to enhance your electronics projects or streamline industrial processes, the ZTX857STZ delivers value, precision, and versatility to meet your needs. Upgrade to Diodes Incorporated and elevate your designs today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer high efficiency and performance.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient operation in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and efficient use of space on circuit boards.

Terminal Form: WIRE

Wire terminals provide a secure connection and easy installation of the transistor in various electronic setups.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and configurations.

Package Style (Meter): IN-LINE

The in-line package style allows for easy placement and connection of the transistor in various electronic systems.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures stable and reliable performance in different operating conditions.

Maximum Collector-Emitter Voltage: 300 V

With a high voltage rating, this transistor can handle large voltage fluctuations, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and excellent reliability, making them ideal for various electronic applications.

Maximum Collector Current (IC): 3 A

With a high collector current rating, this transistor can handle high power requirements in different electronic circuits.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and enhances the overall reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring ease of soldering and assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for safe and efficient soldering of the transistor in electronic assemblies.

Nominal Transition Frequency (fT): 80 MHz

With a high transition frequency, this transistor delivers fast switching speeds and high-frequency performance in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX857STZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX857STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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