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ZTX857STOA

Diodes Incorporated

ZTX857STOA by Diodes Incorporated

ZTX857STOA by Diodes Inc. is a NPN BJT transistor with max. VCE of 300V and IC of 3A. With hFE of 15 and fT of 80MHz, it's ideal for switching applications in various industries due to its single configuration and wire terminals in an inline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 320 parts In-Stock

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320

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Nova Conductors

Japan . 18 parts In-Stock

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Corohmni

South Africa . 585 parts In-Stock

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$0.807

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585

$0.807

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Aztec Data Supply Inc.

USA . 1,886 parts In-Stock

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$1.166

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$1.166

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AZTECH Wire

Italy . 663 parts In-Stock

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$8.462

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663

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Semicontronic

India . 424 parts In-Stock

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$35.050

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$34.174

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$33.998

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424

$35.050

$34.174

$33.998

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Argo Parts USA

USA . 2,306 parts In-Stock

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2,306

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Continental Prestige Electronics

USA . 667 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Enhance your power management systems with the ZTX857STOA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. This Power Bipolar Junction Transistor (BJT) offers exceptional performance in switching applications, allowing for efficient power control. With a maximum collector-emitter voltage of 300V and a nominal transition frequency of 80 MHz, this NPN transistor is a versatile solution for various electronic designs. Trust Diodes Incorporated to provide you with the superior components you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and helps in protecting the transistor from external elements, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplified design and ease of integration into circuits, making it user-friendly.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Compact form factor that allows for space-efficient placement in circuit designs.

Terminal Form: WIRE

Convenient wire terminals for easy connections in circuits, reducing the need for additional components.

No. of Terminals: 3

Simple three-terminal configuration for straightforward circuit connections.

Package Style (Meter): IN-LINE

In-line package style for organized and neat circuit layouts.

Minimum DC Current Gain (hFE): 15

Minimum current gain value ensures consistent and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 300 V

High maximum voltage rating for versatile use in various voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic components.

Maximum Collector Current (IC): 3 A

High maximum current rating allows for handling of higher loads in circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures secure soldering connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and layout.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency enables fast switching capabilities, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX857STOA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX857STOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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