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ZTX853STZ

Diodes Incorporated

ZTX853STZ by Diodes Incorporated

ZTX853STZ by Diodes Inc. is a NPN BJT transistor with max. Vce of 100V and max. Ic of 4A, ideal for switching applications. It has a min hFE of 20 and fT of 130MHz, housed in a plastic/epoxy package with matte tin finish and wire terminals.

Median Price

$1.409

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,990 parts In-Stock

1+ parts

$1.088

100+ parts

$0.700

1k+ parts

$0.531

10k+ parts

-

1,990

$1.088

$0.700

$0.531

-

Farnell

UK . 1,990 parts In-Stock

1+ parts

$1.208

100+ parts

$0.681

1k+ parts

$0.513

10k+ parts

$0.450

1,990

$1.208

$0.681

$0.513

$0.450

Mouser Electronics

USA . 2,818 parts In-Stock

1+ parts

$1.610

100+ parts

$0.679

1k+ parts

$0.487

10k+ parts

$0.429

2,818

$1.610

$0.679

$0.487

$0.429

Newark

USA . 1,830 parts In-Stock

1+ parts

$1.660

100+ parts

$0.698

1k+ parts

$0.502

10k+ parts

-

1,830

$1.660

$0.698

$0.502

-

DigiKey

USA . 5,544 parts In-Stock

1+ parts

$1.780

100+ parts

$0.757

1k+ parts

$0.549

10k+ parts

-

5,544

$1.780

$0.757

$0.549

-

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.434

10,000

-

-

-

$0.434

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.493

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$0.493

-

-

-

Chip Stock

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,000

-

-

-

-

Vyrian

USA . 4,677 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,677

-

-

-

-

Cyclops Electronics Ltd

UK . 1,268 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,268

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,860 parts In-Stock

1+ parts

$0.330

100+ parts

$0.322

1k+ parts

$0.320

10k+ parts

-

4,860

$0.330

$0.322

$0.320

-

Argo Parts USA

USA . 3,043 parts In-Stock

1+ parts

$0.493

100+ parts

-

1k+ parts

-

10k+ parts

$0.478

3,043

$0.493

-

-

$0.478

Continental Prestige Electronics

USA . 1,574 parts In-Stock

1+ parts

$0.493

100+ parts

-

1k+ parts

-

10k+ parts

$0.483

1,574

$0.493

-

-

$0.483

Aztec Data Supply Inc.

USA . 4,092 parts In-Stock

1+ parts

$0.632

100+ parts

-

1k+ parts

-

10k+ parts

-

4,092

$0.632

-

-

-

Corohmni

South Africa . 182 parts In-Stock

1+ parts

$1.132

100+ parts

-

1k+ parts

-

10k+ parts

-

182

$1.132

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,509 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,509

-

-

-

-

iodParts Technologies Inc.

India . 1,146 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,146

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.483

1k+ parts

$0.468

10k+ parts

$0.458

500

-

$0.483

$0.468

$0.458

Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

$1.492

1k+ parts

$1.492

10k+ parts

$1.492

500

-

$1.492

$1.492

$1.492

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$1.492

1k+ parts

$1.492

10k+ parts

$1.492

500

-

$1.492

$1.492

$1.492

Overview

Unlock the power of reliable performance with the ZTX853STZ by Diodes Incorporated. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and efficiency for your switching applications. With a maximum collector-emitter voltage of 100V and a DC current gain of 20, this NPN transistor guarantees stable operation and optimal functionality. Trust in Diodes Incorporated to deliver cutting-edge technology that exceeds expectations, providing you with the value and benefits you need to succeed in your projects. Elevate your designs with the ZTX853STZ and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for high-power amplification and switching applications, making this product versatile and suitable for a wide range of tasks.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use and suitable for applications that require individual control or switching.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high efficiency and fast response times in various electronic circuits.

Terminal Form: WIRE

Wired terminals provide easy connectivity and flexibility in circuit design and assembly, making it convenient to use in various electronic projects.

No. of Terminals: 3

Simple and straightforward design with three terminals for easy connections and integration into electronic circuits.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during the soldering process, ensuring reliable performance and durability in manufacturing and assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZTX853STZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZTX853STZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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