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DMP4013LFGQ-13

Diodes Incorporated

DMP4013LFGQ-13 by Diodes Incorporated

DMP4013LFGQ-13 by Diodes Inc. is a P-channel FET with 40V breakdown voltage, 0.013 ohm RDS(on), and 10.3A max drain current. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,518 parts In-Stock

1+ parts

$1.760

100+ parts

$0.673

1k+ parts

$0.463

10k+ parts

$0.386

2,518

$1.760

$0.673

$0.463

$0.386

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.254

3,000

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$0.254

Verical

USA . 3,000 parts In-Stock

1+ parts

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$0.254

3,000

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$0.254

Distributors (In-Stock)

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.411

100+ parts

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900

$0.411

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Vyrian

USA . 466,986 parts In-Stock

1+ parts

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466,986

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Flip Electronics

USA . 135,000 parts In-Stock

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135,000

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Chip Stock

USA . 43,000 parts In-Stock

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43,000

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NAC Semi

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 466,956 parts In-Stock

1+ parts

$0.258

100+ parts

-

1k+ parts

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466,956

$0.258

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Corohmni

South Africa . 34 parts In-Stock

1+ parts

$0.397

100+ parts

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34

$0.397

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Aztec Data Supply Inc.

USA . 3,036 parts In-Stock

1+ parts

$0.409

100+ parts

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3,036

$0.409

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.411

100+ parts

$0.403

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-

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2,000

$0.411

$0.403

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Argo Parts USA

USA . 1,201 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

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10k+ parts

$0.399

1,201

$0.411

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$0.399

Continental Prestige Electronics

USA . 465 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

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10k+ parts

$0.403

465

$0.411

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-

$0.403

Semicontronic

India . 469,821 parts In-Stock

1+ parts

$0.472

100+ parts

$0.460

1k+ parts

$0.458

10k+ parts

-

469,821

$0.472

$0.460

$0.458

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.657

100+ parts

$0.598

1k+ parts

$0.539

10k+ parts

-

1,000

$0.657

$0.598

$0.539

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Infinite Electronics LLP (Excess)

. 303,019 parts In-Stock

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303,019

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RC Electronics

USA . 73,974 parts In-Stock

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73,974

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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6,000

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Futuretech Components

Singapore . 5,980 parts In-Stock

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5,980

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Lixinc

USA . 3,646 parts In-Stock

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3,646

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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$0.420

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3,000

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$0.420

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Overview

Enhance your electronic devices with the DMP4013LFGQ-13 by Diodes Incorporated. Crafted with precision and reliability, this P-channel field-effect transistor offers seamless switching capabilities, making it ideal for a variety of applications. With a durable plastic/epoxy body and built-in diode, this transistor ensures optimal performance and efficiency. Trust in Diodes Incorporated's expertise in small signal FETs to deliver superior quality and value to your projects. Upgrade your designs with the DMP4013LFGQ-13 and experience unmatched reliability and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring P-channel transistors, allowing for efficient switching.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for circuits requiring a diode and transistor in one package, reducing component count.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in those scenarios.

Surface Mount: YES

Ideal for automated assembly processes and saves space on the PCB.

Minimum DS Breakdown Voltage: 40 V

Sufficient voltage rating for various applications, offering protection against voltage spikes.

Package Shape: SQUARE

Provides a compact form factor, suitable for applications where space is limited.

Terminal Form: NO LEAD

Lead-free terminals are environmentally friendly and comply with regulations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to use and more commonly employed in modern designs.

No. of Terminals: 5

Provides necessary connections for the transistor to function efficiently in a circuit.

Package Style (Meter): SMALL OUTLINE

Compact package style that saves space and is suitable for small devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology known for low power consumption and high efficiency.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stable and predictable characteristics.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for reliable connections.

Maximum Drain Current (ID): 10.3 A

High maximum drain current allows for handling larger loads in the circuit.

Maximum Drain-Source On Resistance: 0.013 ohm

Low on-resistance helps reduce power losses and improve efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connection options.

Case Connection: DRAIN

Drain connection for easy integration into circuits requiring a drain connection.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable soldering during assembly processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures quality and reliability for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP4013LFGQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

10.3 A

Maximum Drain-Source On Resistance:

.013 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4013LFGQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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