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DMP4025LSSQ-13

Diodes Incorporated

DMP4025LSSQ-13 by Diodes Incorporated

DMP4025LSSQ-13 by Diodes Incorporated is a P-channel FET with 40V DS breakdown voltage, 6A max drain current, and 0.045 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation.

Median Price

$1.284

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,671 parts In-Stock

1+ parts

$1.940

100+ parts

$0.754

1k+ parts

$0.586

10k+ parts

-

1,671

$1.940

$0.754

$0.586

-

Mouser Electronics

USA . 4,051 parts In-Stock

1+ parts

$2.020

100+ parts

$0.795

1k+ parts

$0.598

10k+ parts

$0.516

4,051

$2.020

$0.795

$0.598

$0.516

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.451

10,000

-

-

-

$0.451

Farnell

UK . 2,350 parts In-Stock

1+ parts

-

100+ parts

$0.629

1k+ parts

$0.434

10k+ parts

$0.370

2,350

-

$0.629

$0.434

$0.370

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 80 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

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80

$0.570

-

-

-

Chip Stock

USA . 67,000 parts In-Stock

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-

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67,000

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Vyrian

USA . 4,460 parts In-Stock

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4,460

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Elcom Components

USA . 2,500 parts In-Stock

1+ parts

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2,500

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-

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,684 parts In-Stock

1+ parts

$0.383

100+ parts

-

1k+ parts

-

10k+ parts

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4,684

$0.383

-

-

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Continental Prestige Electronics

USA . 6,650 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

$0.559

6,650

$0.570

-

-

$0.559

Argo Parts USA

USA . 2,953 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

$0.553

2,953

$0.570

-

-

$0.553

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.603

100+ parts

$0.549

1k+ parts

$0.494

10k+ parts

-

70

$0.603

$0.549

$0.494

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Corohmni

South Africa . 714 parts In-Stock

1+ parts

$1.462

100+ parts

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714

$1.462

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Microchip USA

USA . 3,483 parts In-Stock

1+ parts

$3.285

100+ parts

-

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3,483

$3.285

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Perfect Parts

USA . 162,400 parts In-Stock

1+ parts

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162,400

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Elevate your electronic designs with the DMP4025LSSQ-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you top-quality Small Signal Field Effect Transistors that are perfect for switching applications. With a built-in diode and a P-Channel configuration, this transistor offers enhanced performance and reliability. Its low on-resistance and high drain current make it ideal for a wide range of electronic projects. Trust Diodes Incorporated to deliver innovative solutions that meet your needs and exceed your expectations. Choose the DMP4025LSSQ-13 for superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliable performance.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for low ON-state resistance and high input impedance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and provides protection against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance in electronic circuits.

Surface Mount: YES

Surface mount packaging saves space and allows for automated assembly, making it suitable for mass production.

Minimum DS Breakdown Voltage: 40 V

With a breakdown voltage of 40 V, this transistor can handle higher voltage applications reliably.

Terminal Form: GULL WING

Gull wing terminals provide easy soldering and inspection during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control and efficiency in switching applications.

No. of Terminals: 8

More terminals allow for additional connections and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB and provides efficient heat dissipation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures high performance, low power consumption, and reliable operation.

Transistor Element Material: SILICON

Silicon material offers high switching speed, low power dissipation, and high temperature tolerance.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring reliable connections.

Maximum Drain Current (ID): 6 A

With a high drain current rating of 6 A, this transistor can handle higher power applications effectively.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance ensures minimal power loss and efficient operation in switching circuits.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options in a circuit.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes without compromising performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures high reliability and performance standards for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP4025LSSQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4025LSSQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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