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DMP4050SSD-13

Diodes Incorporated

DMP4050SSD-13 by Diodes Incorporated

DMP4050SSD-13 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage, 5.2A max drain current, and 0.05 ohm RDS(on). Ideal for switching applications, it features separate elements in a small outline package with matte tin finish for enhanced performance at up to 150°C operating temp.

Median Price

$0.624

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,893 parts In-Stock

1+ parts

$1.530

100+ parts

$0.646

1k+ parts

-

10k+ parts

-

3,893

$1.530

$0.646

-

-

Mouser Electronics

USA . 10,606 parts In-Stock

1+ parts

$1.760

100+ parts

$0.748

1k+ parts

$0.538

10k+ parts

$0.460

10,606

$1.760

$0.748

$0.538

$0.460

DigiKey

USA . 31,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.431

31,120

-

-

-

$0.431

Arrow

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.365

10k+ parts

$0.333

5,000

-

-

$0.365

$0.333

Farnell

UK . 4,513 parts In-Stock

1+ parts

-

100+ parts

$0.624

1k+ parts

$0.424

10k+ parts

-

4,513

-

$0.624

$0.424

-

Element14

Singapore . 4,513 parts In-Stock

1+ parts

-

100+ parts

$0.626

1k+ parts

$0.459

10k+ parts

-

4,513

-

$0.626

$0.459

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Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.387

2,500

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-

$0.387

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

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50

$0.426

-

-

-

Bristol Electronics

USA . 5,176 parts In-Stock

1+ parts

$1.047

100+ parts

$0.387

1k+ parts

$0.272

10k+ parts

-

5,176

$1.047

$0.387

$0.272

-

TME

Poland . 2,496 parts In-Stock

1+ parts

$1.510

100+ parts

$0.650

1k+ parts

$0.465

10k+ parts

$0.413

2,496

$1.510

$0.650

$0.465

$0.413

NAC Semi

USA . 300,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.421

300,000

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-

$0.421

Vyrian

USA . 31,685 parts In-Stock

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31,685

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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Sensible Micro Corp

USA . 5,364 parts In-Stock

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5,364

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Dan-Mar Components

USA . 5,176 parts In-Stock

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5,176

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ComSIT Distribution GmbH

Germany . 871 parts In-Stock

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871

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Inventory MP

USA . 44 parts In-Stock

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44

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 31,252 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

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10k+ parts

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31,252

$0.297

-

-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

$0.401

10k+ parts

-

100

$0.418

-

$0.401

-

Component Stockers USA

USA . 1,538,497 parts In-Stock

1+ parts

$0.530

100+ parts

$0.350

1k+ parts

$0.280

10k+ parts

$0.340

1,538,497

$0.530

$0.350

$0.280

$0.340

GreenTree Electronics

Israel . 1,442,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.417

1,442,500

-

-

-

$0.417

Eastek

USA . 1,172,500 parts In-Stock

1+ parts

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1,172,500

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-

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RC Electronics

USA . 60,723 parts In-Stock

1+ parts

-

100+ parts

$0.470

1k+ parts

$0.430

10k+ parts

$0.420

60,723

-

$0.470

$0.430

$0.420

Perfect Parts

USA . 48,212 parts In-Stock

1+ parts

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48,212

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Lixinc

USA . 15,340 parts In-Stock

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15,340

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S.R.D Solutions

India . 1,710 parts In-Stock

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1,710

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Overview

Unlock the power of cutting-edge technology with the DMP4050SSD-13 by Diodes Incorporated. As a leader in the industry, Diodes Incorporated delivers top-quality small signal field effect transistors that are perfect for a wide range of applications, including switching. With its P-Channel configuration and built-in diode, this transistor offers unmatched performance and reliability. Experience enhanced efficiency and precision with this product's maximum drain current of 4A, maximum power dissipation of 2.14W, and maximum operating temperature of 150°C. Trust Diodes Incorporated to provide unparalleled value and benefits to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the product long-lasting and reliable.

Polarity or Channel Type: P-CHANNEL

P-channel FETs have lower resistance and higher transconductance, making them suitable for applications requiring high efficiency.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for versatility in circuit design and functionality, enabling more complex applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast switching speeds and low power dissipation.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this FET can handle higher voltage applications without risk of damage.

Maximum Drain Current (ID): 5.2 A

Capable of handling high drain currents, this FET is suitable for applications requiring high power output.

Maximum Power Dissipation: 2.14 W

With a high power dissipation rating, this FET can operate efficiently without overheating.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can function reliably in various environments.

Maximum Drain-Source On Resistance: 0.05 ohm

Low on-resistance ensures minimal power loss and efficient performance in high current applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP4050SSD-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

5.2 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4050SSD-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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