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DMP4015SPS-13

Diodes Incorporated

DMP4015SPS-13 by Diodes Incorporated

DMP4015SPS-13 by Diodes Inc. is a P-channel FET with 40V breakdown voltage, 8.5A max drain current, and 0.011 ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.

Median Price

$0.776

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,160 parts In-Stock

1+ parts

$1.130

100+ parts

$0.670

1k+ parts

$0.476

10k+ parts

-

2,160

$1.130

$0.670

$0.476

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Mouser Electronics

USA . 4,687 parts In-Stock

1+ parts

$1.490

100+ parts

$0.622

1k+ parts

-

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4,687

$1.490

$0.622

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Newark

USA . 1,880 parts In-Stock

1+ parts

$1.530

100+ parts

$0.641

1k+ parts

$0.455

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1,880

$1.530

$0.641

$0.455

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Verical

USA . 10,000 parts In-Stock

1+ parts

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$0.266

10,000

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$0.266

DigiKey

USA . 2,727 parts In-Stock

1+ parts

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$0.351

2,727

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$0.351

Farnell

UK . 2,664 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.300

10k+ parts

$0.243

2,664

-

$0.423

$0.300

$0.243

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 1,755 parts In-Stock

1+ parts

$1.320

100+ parts

$0.547

1k+ parts

$0.400

10k+ parts

$0.324

1,755

$1.320

$0.547

$0.400

$0.324

Chip Stock

USA . 92,500 parts In-Stock

1+ parts

-

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92,500

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IBS Electronics

USA . 32,500 parts In-Stock

1+ parts

-

100+ parts

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$0.379

32,500

-

-

-

$0.379

NAC Semi

USA . 27,500 parts In-Stock

1+ parts

-

100+ parts

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$0.467

27,500

-

-

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$0.467

Cyclops Electronics Ltd

UK . 27,315 parts In-Stock

1+ parts

-

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27,315

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Vyrian

USA . 11,596 parts In-Stock

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11,596

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Bristol Electronics

USA . 3,995 parts In-Stock

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3,995

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Nova Conductors

Japan . 87 parts In-Stock

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87

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ComSIT Distribution GmbH

Germany . 65 parts In-Stock

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65

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SPM Sales

USA . 8 parts In-Stock

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,344 parts In-Stock

1+ parts

$0.208

100+ parts

-

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11,344

$0.208

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Semicontronic

India . 11,112 parts In-Stock

1+ parts

$0.208

100+ parts

$0.203

1k+ parts

$0.202

10k+ parts

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11,112

$0.208

$0.203

$0.202

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Corohmni

South Africa . 35 parts In-Stock

1+ parts

$0.421

100+ parts

-

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35

$0.421

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Component Stockers USA

USA . 160,603 parts In-Stock

1+ parts

$0.830

100+ parts

$0.500

1k+ parts

$0.350

10k+ parts

$0.260

160,603

$0.830

$0.500

$0.350

$0.260

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.582

100+ parts

$1.440

1k+ parts

$1.297

10k+ parts

-

1,000

$1.582

$1.440

$1.297

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Aztec Data Supply Inc.

USA . 3,521 parts In-Stock

1+ parts

$1.920

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3,521

$1.920

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Kepictronics

USA . 33,000 parts In-Stock

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Eastek

USA . 27,500 parts In-Stock

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27,500

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GreenTree Electronics

Israel . 22,500 parts In-Stock

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22,500

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Perfect Parts

USA . 6,688 parts In-Stock

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6,688

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Lixinc

USA . 4,360 parts In-Stock

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4,360

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Continental Prestige Electronics

USA . 1,955 parts In-Stock

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1,955

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Argo Parts USA

USA . 1,434 parts In-Stock

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1,434

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Bastille Electronics

Australia . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of cutting-edge technology with the DMP4015SPS-13 by Diodes Incorporated. Crafted with precision and expertise, this P-CHANNEL small signal Field Effect Transistor offers unparalleled performance in switching applications. With a maximum drain current of 8.5 A and a minimum DS breakdown voltage of 40 V, this transistor provides superior reliability and efficiency. Say goodbye to compromises and hello to seamless operation with the DMP4015SPS-13, the perfect solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and heat resistance, making it a reliable choice for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low power consumption and high efficiency, making them ideal for battery-operated devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and protects the circuit from reverse voltage, enhancing overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast response times and low power consumption.

Surface Mount: YES

This feature allows for easy and efficient PCB assembly, saving time and costs during production.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this FET can handle higher voltages without the risk of damage, providing reliability in various operating conditions.

Package Shape: RECTANGULAR

The rectangular shape saves space on the PCB and allows for efficient layout designs in crowded circuit boards.

Terminal Form: FLAT

The flat terminals ensure secure connections and easy soldering, providing a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the switching process, resulting in improved efficiency and performance.

No. of Terminals: 5

The 5 terminals provide flexibility in circuit design and allow for versatile applications in various electronic devices.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB, making it suitable for compact electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low power consumption, making it an ideal choice for modern electronic devices.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and efficiency, ensuring long-term performance and durability.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and stable connection over time, minimizing the risk of corrosion and ensuring consistent performance.

Maximum Drain Current (ID): 8.5 A

With a high maximum drain current, this FET can handle heavy loads with ease, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.011 ohm

The low on-resistance minimizes power loss and improves efficiency, making this FET an energy-efficient choice.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit designs and allows for easy integration into various electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this FET ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

This peak reflow temperature allows for proper soldering and ensures the FET's long-term reliability in various operating conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP4015SPS-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

8.5 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4015SPS-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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