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DMP4025LSD-13

Diodes Incorporated

DMP4025LSD-13 by Diodes Incorporated

DMP4025LSD-13 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage, 7.6A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.

Median Price

$0.719

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,588 parts In-Stock

1+ parts

$1.370

100+ parts

$0.573

1k+ parts

$0.407

10k+ parts

$0.313

3,588

$1.370

$0.573

$0.407

$0.313

Newark

USA . 520 parts In-Stock

1+ parts

$1.450

100+ parts

$0.603

1k+ parts

$0.537

10k+ parts

-

520

$1.450

$0.603

$0.537

-

Mouser Electronics

USA . 793 parts In-Stock

1+ parts

$1.500

100+ parts

$0.626

1k+ parts

-

10k+ parts

-

793

$1.500

$0.626

-

-

Verical

USA . 35,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.306

35,000

-

-

-

$0.306

Arrow

USA . 4,082 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.283

10k+ parts

$0.275

4,082

-

-

$0.283

$0.275

Element14

Singapore . 790 parts In-Stock

1+ parts

-

100+ parts

$0.719

1k+ parts

$0.559

10k+ parts

-

790

-

$0.719

$0.559

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Farnell

UK . 87 parts In-Stock

1+ parts

-

100+ parts

$0.424

1k+ parts

$0.292

10k+ parts

-

87

-

$0.424

$0.292

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.495

100+ parts

-

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-

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150

$0.495

-

-

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NAC Semi

USA . 47,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.542

47,500

-

-

-

$0.542

Chip Stock

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

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11,500

-

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Vyrian

USA . 9,801 parts In-Stock

1+ parts

-

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9,801

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-

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IBS Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.319

7,500

-

-

-

$0.319

Rebound Electronics

UK . 35 parts In-Stock

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35

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,525 parts In-Stock

1+ parts

$0.225

100+ parts

-

1k+ parts

-

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11,525

$0.225

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Semicontronic

India . 10,066 parts In-Stock

1+ parts

$0.225

100+ parts

$0.219

1k+ parts

$0.218

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-

10,066

$0.225

$0.219

$0.218

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.485

100+ parts

-

1k+ parts

$0.465

10k+ parts

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1,000

$0.485

-

$0.465

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Argo Parts USA

USA . 4,817 parts In-Stock

1+ parts

$0.495

100+ parts

-

1k+ parts

-

10k+ parts

$0.480

4,817

$0.495

-

-

$0.480

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.504

100+ parts

$0.504

1k+ parts

$0.504

10k+ parts

-

350

$0.504

$0.504

$0.504

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Modulus Dynamics

Lithuania . 3,613 parts In-Stock

1+ parts

$0.677

100+ parts

$0.677

1k+ parts

$0.677

10k+ parts

-

3,613

$0.677

$0.677

$0.677

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Aztec Data Supply Inc.

USA . 209 parts In-Stock

1+ parts

$0.700

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-

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209

$0.700

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Continental Prestige Electronics

USA . 873 parts In-Stock

1+ parts

$0.861

100+ parts

$0.496

1k+ parts

$0.324

10k+ parts

$0.258

873

$0.861

$0.496

$0.324

$0.258

Corohmni

South Africa . 738 parts In-Stock

1+ parts

$1.932

100+ parts

-

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738

$1.932

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RC Electronics

USA . 85,950 parts In-Stock

1+ parts

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100+ parts

$0.500

1k+ parts

$0.460

10k+ parts

$0.450

85,950

-

$0.500

$0.460

$0.450

Eastek

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 16,854 parts In-Stock

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16,854

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GreenTree Electronics

Israel . 10,000 parts In-Stock

1+ parts

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$0.317

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$0.317

Kepictronics

USA . 2,065 parts In-Stock

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2,065

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Lixinc

USA . 1,310 parts In-Stock

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1,310

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Overview

Looking for a reliable and high-quality Small Signal Field Effect Transistor (FET) for your switching applications? Look no further than the DMP4025LSD-13 by Diodes Incorporated. With its P-Channel configuration, separate elements with built-in diode, and enhancement mode operation, this FET offers exceptional performance and efficiency. Whether you're designing power supplies, motor controls, or battery management systems, this transistor's 40V minimum DS breakdown voltage and 5.8A maximum drain current make it a versatile choice. Trust in Diodes Incorporated's expertise and innovation to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance and low off-state leakage current, making them suitable for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with a built-in diode allows for better control and functionality in switching circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 40 V

The minimum breakdown voltage of 40V ensures the transistor can handle higher voltages, making it versatile for various applications.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on the PCB, ideal for compact electronic designs.

Maximum Drain Current (Abs) (ID): 7.6 A

The high maximum drain current allows the transistor to handle large current loads, suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.045 ohm

The low on-resistance ensures minimal power loss and efficient switching operation, making the transistor energy-efficient.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP4025LSD-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

7.6 A

Maximum Drain Current (ID):

5.8 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4025LSD-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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