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DMP4050SSDQ-13

Diodes Incorporated

DMP4050SSDQ-13 by Diodes Incorporated

DMP4050SSDQ-13 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage, it has 5.2A Drain Current and 0.05 ohm On Resistance. This ENHANCEMENT MODE transistor operates up to 150°C, making it suitable for various electronic devices.

Median Price

$1.384

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,597 parts In-Stock

1+ parts

$1.360

100+ parts

$0.744

1k+ parts

$0.558

10k+ parts

$0.525

9,597

$1.360

$0.744

$0.558

$0.525

Element14

Singapore . 2,500 parts In-Stock

1+ parts

$1.407

100+ parts

$0.898

1k+ parts

$0.579

10k+ parts

$0.552

2,500

$1.407

$0.898

$0.579

$0.552

Newark

USA . 2,480 parts In-Stock

1+ parts

$1.810

100+ parts

$1.110

1k+ parts

$0.918

10k+ parts

-

2,480

$1.810

$1.110

$0.918

-

DigiKey

USA . 1,204 parts In-Stock

1+ parts

$2.000

100+ parts

$0.806

1k+ parts

$0.643

10k+ parts

$0.525

1,204

$2.000

$0.806

$0.643

$0.525

Avnet

USA . 27,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,500

-

-

-

-

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.525

15,000

-

-

-

$0.525

Farnell

UK . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.901

1k+ parts

$0.585

10k+ parts

$0.556

2,500

-

$0.901

$0.585

$0.556

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 168 parts In-Stock

1+ parts

$0.689

100+ parts

-

1k+ parts

-

10k+ parts

-

168

$0.689

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.388

100+ parts

$1.263

1k+ parts

$1.138

10k+ parts

-

40

$1.388

$1.263

$1.138

-

Microchip USA

USA . 141 parts In-Stock

1+ parts

$3.822

100+ parts

-

1k+ parts

-

10k+ parts

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141

$3.822

-

-

-

Native Components

USA . 922 parts In-Stock

1+ parts

$137.411

100+ parts

-

1k+ parts

-

10k+ parts

$131.914

922

$137.411

-

-

$131.914

Northwest PG Solutions

USA . 1,290 parts In-Stock

1+ parts

$151.152

100+ parts

-

1k+ parts

-

10k+ parts

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1,290

$151.152

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Perfect Parts

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

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5,600

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,000

-

-

-

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Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,500

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the DMP4050SSDQ-13 by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated delivers top-notch quality and reliability. Ideal for switching applications, this P-channel transistor offers enhanced performance and efficiency. With a maximum drain current of 4A and a low on-resistance of 0.05 ohm, this product provides unparalleled value and benefits to customers. Trust in Diodes Incorporated to provide innovative solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring P-channel transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Provides versatility and functionality with built-in diode for circuit design.

Transistor Application: SWITCHING

Ideal for switching purposes in electronic circuits.

Surface Mount: YES

Easy to mount on PCBs for efficient assembly.

Minimum DS Breakdown Voltage: 40 V

Allows for high voltage handling capabilities in various applications.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enables enhanced control and efficiency in operation.

No. of Elements: 2

Provides dual functionality for circuit design flexibility.

Maximum Drain Current (Abs) (ID): 5.2 A

Capable of handling high current loads for increased performance.

No. of Terminals: 8

Sufficient terminals for versatile connections in circuits.

Maximum Power Dissipation (Abs): 2.14 W

Efficient power handling to prevent overheating during operation.

Package Style (Meter): SMALL OUTLINE

Compact package style for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology for efficient transistor operation.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance for various environments.

Transistor Element Material: SILICON

Durable and widely-used material for transistor construction.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term reliability.

Maximum Drain Current (ID): 4 A

Sufficient current handling capacity for most applications.

Maximum Drain-Source On Resistance: 0.05 ohm

Low resistance for efficient current flow in the circuit.

Terminal Position: DUAL

Multiple terminal positions for easy connections.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow temperature profile for reliable soldering.

Peak Reflow Temperature °C: 260

High reflow temperature tolerance for soldering process.

Reference Standard: AEC-Q101

Compliance with automotive electronic component quality standards.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP4050SSDQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

5.2 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP4050SSDQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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