Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
DMP3098LSS-13 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage, 5.3A max drain current, and 0.065 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 20A pulsed drain current. Its small outline package and matte tin finish make it suitable for surface mount designs at up to 150°C operating temperature.
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$1.890
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Perfect Parts
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QUARKTWIN TECHNOLOGY LTD
Eastek
Infinite Electronics LLP (Excess)
Assy Fe
GreenTree Electronics
Kepictronics
The plastic/epoxy material provides durability and protection for the internal components of the FET, ensuring reliable performance in various operating conditions.
P-Channel FETs are known for their low Rds(on) and high efficiency, making them suitable for applications requiring low power consumption and fast switching speeds.
The built-in diode helps protect the circuit from voltage spikes and reverse polarity, enhancing the overall reliability and safety of the FET.
Designed for switching applications, this FET can efficiently control the flow of current in a circuit, making it ideal for power management and voltage regulation.
Being surface mountable makes this FET easy to integrate into circuit boards, reducing assembly time and making it suitable for compact electronic devices.
With a minimum breakdown voltage of 30V, this FET can handle higher voltages without failure, ensuring reliable operation in demanding environments.
The high pulsed drain current rating allows this FET to handle short bursts of high current, making it suitable for applications requiring occasional high-power operation.
The low on-resistance of 0.065 ohms results in minimal power loss and heat generation, improving the overall efficiency and performance of the FET.
With a maximum operating temperature of 150°C, this FET can operate reliably in high-temperature environments without compromising performance or longevity.
Power Field Effect Transistors (FET) DMP3098LSS-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
DMP3098LSS-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Bond Wire 11/Nov/2011
PCN Assembly/Origin - Mult Dev 06/Dec/2019
PCN Other - Multiple Device Changes 29/Apr/2013
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
261
Mercury Systems
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
BAV99
Philips Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
FDLL4148
Onsemi
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WT
Taitron Components
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
1N4148
Toshiba
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FDC5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
KSZ9031RNXIC
Microchip Technology
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
FDS6675BZ
FDS6675BZ by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 55A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it offers low 0.013 ohm Drain-Source On Resistance and can handle up to 2.5W power dissipation.
IRLML9301TRPBF
Infineon Technologies
Infineon's IRLML9301TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 15A IDM, and 0.064 ohm RDS(ON). With a small outline package style, it operates b/w -55 to 150 °C and has a max power dissipation of 1.3W.
FDMS86300DC
FDMS86300DC by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM Pulsed Drain Current, 0.0031 ohm RDS(ON), and 240mJ EAS Avalanche Energy Rating. With a max power dissipation of 125W and operating temperature up to 150°C, it is suitable for high-power switching circuits in various electronic devices.
NTD5867NLT4G
NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
IRFS7530TRL7PP
Infineon's IRFS7530TRL7PP is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A ID, and 0.0014 ohm RDS(on). Ideal for power applications, it offers 375W Pd max, operates up to 175°C, and features MOSFET technology. Suitable for surface mount designs with matte tin finish.
IRF540SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
CSD18531Q5AT
Texas Instruments
CSD18531Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 19A Drain Current, and 0.0058 ohm On Resistance. With an operating range of -55 to 150 °C, it's ideal for power management in various electronic devices.
BSC035N10NS5ATMA1
Infineon BSC035N10NS5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0035 ohm RDS(on), and 400A IDM. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with DUAL terminals.
RFD14N05LSM9A
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-252AA;
DN3535N8-G
DN3535N8-G by Microchip Technology is a N-CHANNEL FET with 0.5A IDM, 1.6W Abs Pd, and 10ohm RDS(on). Ideal for switching applications in small outline packages, operating from -55 to 150°C.
CSD18537NQ5A
CSD18537NQ5A by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 151A.
IRF530PBF
Vishay Intertechnology
Vishay Intertechnology's IRF530PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 88W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
STW12NK90Z
STMicroelectronics
STW12NK90Z by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 230W, this transistor has a 0.88 ohm RDS(on) and can handle up to 11A drain current.
FDS4559-F085
FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
IRFB4110PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Operating Temperature: 175 Cel; Package Body Material: PLASTIC/EPOXY;
FDD4141
The Onsemi FDD4141 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has low 0.0123 ohm Drain-Source Resistance and can handle up to 69W power dissipation.
CSD19534Q5AT
CSD19534Q5AT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It is used for switching applications, has a max IDM of 137A and an EAS rating of 55mJ.
IRF740PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
IRF7343TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
IRF540PBF
Vishay Intertechnology's IRF540PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 230mJ EAS, and 0.077 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures up to 175°C.
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DMP3099L-7
Diodes Incorporated
DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.
DMP3098L-7
DMP3098L-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max pulsed drain current of 11A. It is used for switching applications and operates in enhancement mode.
DMP3056LDM-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; JESD-609 Code: e3;
DMP3056L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .05 ohm; JESD-609 Code: e3; Maximum Drain Current (ID): 4.3 A;
DMP3098LQ-7
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
DMP3099L-13
DMP3099L-13 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 1.08W. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance and high temp rating of 150°C.
DMP3099LQ-7
DMP3099LQ-7 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 11A IDM, and 10.2mJ EAS rating. Operates in -55 to 150°C range with 9.8ns ton and 46ns toff times, ideal for automotive (AEC-Q101) and industrial electronics due to its small outline package style and high power dissipation capability of 1.08W.
DMP3099LQ-13
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1;
DMP3056LSD-13
DMP3056LSD-13 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, 24A IDM, and 0.045 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages with 8 terminals. Operating at max temp of 150°C, it features METAL-OXIDE SEMICONDUCTOR tech and matte tin finish for enhanced performance.
DMP3056LDM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 6;
DMP3056LSS-13
DMP3056LSS-13 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, 7.1A Drain Current, and 0.036 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE and ENHANCEMENT MODE operation. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
DMP3010LK3-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.4 W; Avalanche Energy Rating (EAS): 113 mJ; Maximum Pulsed Drain Current (IDM): 100 A;
DMP3056LSDQ-13
DMP3056LSDQ-13 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 24A IDM, 0.045 ohm RDS(on), and 92pF Crss. Operates in -55 to 150 °C range, AEC-Q101 compliant, and suitable for surface mount designs.
DMP3056LDMQ-7
DMP3056LDMQ-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max drain current of 4.3A. It is used in applications requiring high power dissipation and operates at temperatures up to 150°C.
DMP3017SFGQ-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; JESD-30 Code: S-PDSO-N5; Maximum Pulsed Drain Current (IDM): 80 A;
DMP3011SFVWQ-7
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
DMP3056L-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 20 A; JESD-609 Code: e3;
DMP3007SFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Transistor Application: SWITCHING; Maximum Feedback Capacitance (Crss): 305 pF;
DMP3028LSD-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Moisture Sensitivity Level (MSL): 1; Reference Standard: MIL-STD-202;
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