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DMP3056LDMQ-7

Diodes Incorporated

DMP3056LDMQ-7 by Diodes Incorporated

DMP3056LDMQ-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max drain current of 4.3A. It is used in applications requiring high power dissipation and operates at temperatures up to 150°C.

Median Price

$0.544

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,904 parts In-Stock

1+ parts

$0.940

100+ parts

$0.380

1k+ parts

$0.263

10k+ parts

-

2,904

$0.940

$0.380

$0.263

-

Mouser Electronics

USA . 2,671 parts In-Stock

1+ parts

$0.940

100+ parts

$0.380

1k+ parts

$0.263

10k+ parts

$0.192

2,671

$0.940

$0.380

$0.263

$0.192

Verical

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

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$0.148

42,000

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-

-

$0.148

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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$0.111

3,000

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$0.111

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 47 parts In-Stock

1+ parts

$0.189

100+ parts

-

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47

$0.189

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-

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TME

Poland . 2,996 parts In-Stock

1+ parts

$0.680

100+ parts

$0.277

1k+ parts

$0.186

10k+ parts

$0.157

2,996

$0.680

$0.277

$0.186

$0.157

Vyrian

USA . 8,018 parts In-Stock

1+ parts

-

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8,018

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NAC Semi

USA . 6,000 parts In-Stock

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6,000

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Prism Electronics

USA . 2,989 parts In-Stock

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2,989

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Distributors (Availability)

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Semicontronic

India . 11,820 parts In-Stock

1+ parts

$0.090

100+ parts

$0.088

1k+ parts

$0.087

10k+ parts

-

11,820

$0.090

$0.088

$0.087

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Ampacity Inc.

Singapore . 8,141 parts In-Stock

1+ parts

$0.090

100+ parts

-

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8,141

$0.090

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Continental Prestige Electronics

USA . 5,479 parts In-Stock

1+ parts

$0.189

100+ parts

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1k+ parts

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10k+ parts

$0.185

5,479

$0.189

-

-

$0.185

Argo Parts USA

USA . 3,149 parts In-Stock

1+ parts

$0.189

100+ parts

-

1k+ parts

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10k+ parts

$0.183

3,149

$0.189

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-

$0.183

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.189

100+ parts

-

1k+ parts

$0.180

10k+ parts

$0.176

500

$0.189

-

$0.180

$0.176

Corohmni

South Africa . 236 parts In-Stock

1+ parts

$0.198

100+ parts

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236

$0.198

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$0.870

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100

$0.870

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Kepictronics

USA . 99,000 parts In-Stock

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99,000

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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9,000

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Overview

Discover the power of the DMP3056LDMQ-7 by Diodes Incorporated, the leading manufacturer of high-quality Power Field Effect Transistors (FETs). This P-CHANNEL transistor offers unparalleled performance and reliability, making it perfect for a wide range of applications. With its single configuration and built-in diode, it simplifies integration and boosts efficiency. Experience the value and benefits of this advanced technology, from its impressive 30V DS breakdown voltage to its maximum pulsing drain current of 13A. Trust Diodes Incorporated to deliver exceptional products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the FET.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower resistance and higher current capabilities compared to N-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the efficiency of this FET, making it a more versatile and reliable option.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 30 V

This FET can handle higher voltages, making it suitable for a variety of applications that require a certain voltage threshold.

Maximum Power Dissipation (Abs): 1.25 W

With a high power dissipation capability, this FET can handle larger loads without overheating.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperatures without any performance degradation, making it suitable for demanding environments.

Technical Specifications

Power Field Effect Transistors (FET) DMP3056LDMQ-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.3 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

13 A

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

DMP3056LDMQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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