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DMP3056LSD-13

Diodes Incorporated

DMP3056LSD-13 by Diodes Incorporated

DMP3056LSD-13 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, 24A IDM, and 0.045 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages with 8 terminals. Operating at max temp of 150°C, it features METAL-OXIDE SEMICONDUCTOR tech and matte tin finish for enhanced performance.

Median Price

$0.804

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,500 parts In-Stock

1+ parts

$0.804

100+ parts

$0.417

1k+ parts

$0.264

10k+ parts

$0.263

2,500

$0.804

$0.417

$0.264

$0.263

Newark

USA . 344 parts In-Stock

1+ parts

$1.160

100+ parts

$0.516

1k+ parts

$0.382

10k+ parts

-

344

$1.160

$0.516

$0.382

-

DigiKey

USA . 5,609 parts In-Stock

1+ parts

$1.170

100+ parts

$0.478

1k+ parts

$0.335

10k+ parts

-

5,609

$1.170

$0.478

$0.335

-

Mouser Electronics

USA . 4 parts In-Stock

1+ parts

$1.220

100+ parts

$0.495

1k+ parts

$0.382

10k+ parts

-

4

$1.220

$0.495

$0.382

-

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.208

2,500

-

-

-

$0.208

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.208

2,500

-

-

-

$0.208

Farnell

UK . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.416

1k+ parts

$0.263

10k+ parts

$0.262

2,500

-

$0.416

$0.263

$0.262

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.317

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.317

-

-

-

Maritex

Poland . 493 parts In-Stock

1+ parts

$0.329

100+ parts

$0.200

1k+ parts

$0.146

10k+ parts

-

493

$0.329

$0.200

$0.146

-

TME

Poland . 1,121 parts In-Stock

1+ parts

$1.000

100+ parts

$0.412

1k+ parts

$0.288

10k+ parts

$0.223

1,121

$1.000

$0.412

$0.288

$0.223

IBS Electronics

USA . 175,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.561

175,000

-

-

-

$0.561

Chip Stock

USA . 28,036 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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28,036

-

-

-

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NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.215

20,000

-

-

-

$0.215

Vyrian

USA . 4,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,558

-

-

-

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ComSIT Distribution GmbH

Germany . 2,650 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,650

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,236 parts In-Stock

1+ parts

$0.196

100+ parts

-

1k+ parts

-

10k+ parts

-

4,236

$0.196

-

-

-

Continental Prestige Electronics

USA . 6,358 parts In-Stock

1+ parts

$0.317

100+ parts

-

1k+ parts

-

10k+ parts

$0.310

6,358

$0.317

-

-

$0.310

Argo Parts USA

USA . 2,152 parts In-Stock

1+ parts

$0.317

100+ parts

-

1k+ parts

-

10k+ parts

$0.307

2,152

$0.317

-

-

$0.307

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.317

100+ parts

-

1k+ parts

$0.301

10k+ parts

$0.294

100

$0.317

-

$0.301

$0.294

Semicontronic

India . 4,253 parts In-Stock

1+ parts

$0.426

100+ parts

$0.415

1k+ parts

$0.413

10k+ parts

-

4,253

$0.426

$0.415

$0.413

-

Aztec Data Supply Inc.

USA . 973 parts In-Stock

1+ parts

$1.330

100+ parts

-

1k+ parts

-

10k+ parts

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973

$1.330

-

-

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Corohmni

South Africa . 218 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

-

10k+ parts

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218

$1.410

-

-

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Andel Nordic

Denmark . 4,545 parts In-Stock

1+ parts

$5.441

100+ parts

-

1k+ parts

$5.223

10k+ parts

$5.223

4,545

$5.441

-

$5.223

$5.223

Infinite Electronics LLP (Excess)

. 49,508 parts In-Stock

1+ parts

-

100+ parts

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49,508

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-

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GreenTree Electronics

Israel . 35,000 parts In-Stock

1+ parts

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100+ parts

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35,000

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-

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Robosynatics

Brazil . 22,664 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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22,664

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-

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Lucentia Tech

USA . 22,664 parts In-Stock

1+ parts

-

100+ parts

$1.646

1k+ parts

$1.613

10k+ parts

$1.613

22,664

-

$1.646

$1.613

$1.613

Lixinc

USA . 3,476 parts In-Stock

1+ parts

-

100+ parts

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3,476

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-

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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2,500

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-

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Assy Fe

Spain . 2,000 parts In-Stock

1+ parts

-

100+ parts

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2,000

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-

-

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Kepictronics

USA . 95 parts In-Stock

1+ parts

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100+ parts

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95

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Overview

Experience the power of innovation with the DMP3056LSD-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch Power Field Effect Transistors (FET) like no other. This P-CHANNEL transistor offers exceptional performance in switching applications, making it a must-have for various electronic devices. With its high-quality construction and reliable functionality, the DMP3056LSD-13 provides customers with unmatched value, efficiency, and convenience. Take your projects to the next level with this versatile and durable component from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, making it a reliable choice for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer low on-resistance and high current handling capacity, making them suitable for power management applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for efficient switching and provides built-in protection against reverse current flow, enhancing the performance of the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in electronic circuits.

Surface Mount: YES

Surface mount technology makes installation and soldering easy, perfect for automated assembly processes in production.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this FET can handle high voltages safely, making it suitable for power applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and compact design, ideal for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections and solderability, ensuring stable performance in various environments.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control and lower gate voltage requirements, enhancing efficiency in switching applications.

No. of Elements: 2

With two separate elements, this FET offers flexibility and reliability in circuit design, suitable for diverse applications.

Maximum Pulsed Drain Current: 24 A

This high pulsed drain current rating ensures reliable performance in high-current applications, making it a robust choice for power management.

Maximum Power Dissipation (Abs): 2.5 W

With a high power dissipation rating, this FET can handle heat effectively, ensuring long-term reliability in demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables compact designs, making it suitable for portable devices and miniaturized electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency and low on-resistance, enhancing the performance and power handling capabilities of the FET.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can safely operate in high-temperature environments, ensuring reliability in diverse applications.

Transistor Element Material: SILICON

Silicon-based construction provides high conductivity and durability, ensuring stable performance over time.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections in various operating conditions.

Maximum Drain-Source On Resistance: 0.045 ohm

With low on-resistance, this FET minimizes power loss and enhances efficiency in power management applications.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit layout and connection options, making it versatile for various designs.

Maximum Time At Peak Reflow Temperature: 30s

This FET can withstand peak reflow temperatures for up to 30 seconds, ensuring robust solder connections during assembly.

Peak Reflow Temperature: 260

With a high peak reflow temperature tolerance, this FET can handle reflow soldering processes effectively, ensuring reliable connections in production.

Technical Specifications

Power Field Effect Transistors (FET) DMP3056LSD-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

6.9 A

Maximum Drain Current (ID):

6.9 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

24 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP3056LSD-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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