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DMP3056LSSQ-13

Diodes Incorporated

DMP3056LSSQ-13 by Diodes Incorporated

DMP3056LSSQ-13 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 25A IDM, and 0.045 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation, it has a max temp of 150°C and meets AEC-Q101 & IATF 16949 standards.

Median Price

$0.681

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,951 parts In-Stock

1+ parts

$1.020

100+ parts

$0.415

1k+ parts

$0.288

10k+ parts

-

1,951

$1.020

$0.415

$0.288

-

Mouser Electronics

USA . 1,900 parts In-Stock

1+ parts

$1.020

100+ parts

$0.415

1k+ parts

$0.289

10k+ parts

$0.215

1,900

$1.020

$0.415

$0.289

$0.215

Newark

USA . 2,363 parts In-Stock

1+ parts

$1.050

100+ parts

$0.426

1k+ parts

$0.297

10k+ parts

-

2,363

$1.050

$0.426

$0.297

-

Avnet

USA . 215,000 parts In-Stock

1+ parts

-

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215,000

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Verical

USA . 5,000 parts In-Stock

1+ parts

-

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$0.150

5,000

-

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-

$0.150

Farnell

UK . 3,389 parts In-Stock

1+ parts

-

100+ parts

$0.335

1k+ parts

$0.180

10k+ parts

$0.177

3,389

-

$0.335

$0.180

$0.177

Element14

Singapore . 3,389 parts In-Stock

1+ parts

-

100+ parts

$0.342

1k+ parts

$0.197

10k+ parts

-

3,389

-

$0.342

$0.197

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.224

100+ parts

-

1k+ parts

-

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500

$0.224

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NAC Semi

USA . 315,000 parts In-Stock

1+ parts

-

100+ parts

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315,000

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Vyrian

USA . 46,964 parts In-Stock

1+ parts

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46,964

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Distributors (Availability)

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Semicontronic

India . 48,014 parts In-Stock

1+ parts

$0.128

100+ parts

$0.125

1k+ parts

$0.124

10k+ parts

-

48,014

$0.128

$0.125

$0.124

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Ampacity Inc.

Singapore . 46,979 parts In-Stock

1+ parts

$0.128

100+ parts

-

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46,979

$0.128

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.220

100+ parts

-

1k+ parts

$0.211

10k+ parts

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50

$0.220

-

$0.211

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Argo Parts USA

USA . 3,697 parts In-Stock

1+ parts

$0.224

100+ parts

-

1k+ parts

-

10k+ parts

$0.217

3,697

$0.224

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-

$0.217

Aztec Data Supply Inc.

USA . 3,799 parts In-Stock

1+ parts

$0.940

100+ parts

-

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-

10k+ parts

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3,799

$0.940

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Corohmni

South Africa . 656 parts In-Stock

1+ parts

$1.303

100+ parts

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656

$1.303

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GreenTree Electronics

Israel . 57,500 parts In-Stock

1+ parts

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57,500

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Continental Prestige Electronics

USA . 3,769 parts In-Stock

1+ parts

-

100+ parts

$0.242

1k+ parts

$0.173

10k+ parts

$0.134

3,769

-

$0.242

$0.173

$0.134

QUARKTWIN TECHNOLOGY LTD

USA . 2,908 parts In-Stock

1+ parts

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100+ parts

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2,908

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Overview

Discover the exceptional quality and reliability of Diodes Incorporated with the DMP3056LSSQ-13 Small Signal Field Effect Transistor. This P-Channel single transistor with built-in diode is perfect for switching applications, offering high performance in a small outline package. With a maximum drain current of 4.9A and low on-resistance, this transistor provides efficient operation and enhanced power dissipation. Trust Diodes Incorporated for top-of-the-line technology and elevate your projects to new heights with the DMP3056LSSQ-13.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their higher mobility and conductivity, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can help protect against reverse polarity or voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount technology allows for easy and compact integration into PCBs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

With a higher breakdown voltage, this FET can handle higher voltages without failing, making it more versatile.

Package Shape: RECTANGULAR

Rectangular shape is common and easy to work with, providing stability during assembly and mounting.

Terminal Form: GULL WING

The gull wing terminals are well-suited for surface mount applications, ensuring secure connections to the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require a positive voltage to switch on, offering better control and efficiency in switching circuits.

Maximum Pulsed Drain Current (IDM): 25 A

High pulsed drain current allows for handling sudden spikes in current, ideal for applications with variable loads.

Avalanche Energy Rating (EAS): 15 mJ

A high avalanche energy rating indicates better reliability and protection against voltage surges or transients.

No. of Terminals: 8

With 8 terminals, this FET offers flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 1.6 W

The FET can handle up to 1.6W of power dissipation, ensuring it can operate under demanding conditions without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package is space-saving and suitable for compact designs, perfect for portable electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency, low power consumption, and fast switching speeds, ideal for modern electronics.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this FET can withstand elevated temperatures without performance degradation.

Transistor Element Material: SILICON

Silicon transistors are reliable and widely used in electronic devices due to their excellent electrical properties and durability.

Minimum Operating Temperature: -55 °C

Capable of operating in sub-zero temperatures, making it suitable for a wide range of environments and applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for secure terminal connections.

Maximum Drain Current (ID): 4.9 A

High drain current rating ensures the FET can handle substantial continuous current flow without overheating.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance means minimal power loss and efficient operation, making it suitable for high-current applications.

Terminal Position: DUAL

Dual terminal position allows for versatile PCB layout and connection options.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes, ensuring reliable and stable connections.

Maximum Feedback Capacitance (Crss): 102 pF

Low feedback capacitance minimizes signal distortion and improves high-frequency performance in switching applications.

Reference Standard: AEC-Q101; IATF 16949

Compliance with automotive and quality standards guarantees reliability and durability in challenging environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP3056LSSQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

15 mJ

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4.9 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

102 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Reference Standard:

AEC-Q101; IATF 16949

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP3056LSSQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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