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DMP3085LSD-13

Diodes Incorporated

DMP3085LSD-13 by Diodes Incorporated

DMP3085LSD-13 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage, 3.9A max drain current, and 0.07 ohm RDS(on). Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with built-in diode elements for enhanced performance.

Median Price

$0.171

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 455 parts In-Stock

1+ parts

$0.542

100+ parts

$0.233

1k+ parts

$0.208

10k+ parts

-

455

$0.542

$0.233

$0.208

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Mouser Electronics

USA . 164,924 parts In-Stock

1+ parts

$0.620

100+ parts

$0.246

1k+ parts

$0.166

10k+ parts

$0.144

164,924

$0.620

$0.246

$0.166

$0.144

DigiKey

USA . 46,515 parts In-Stock

1+ parts

$0.620

100+ parts

$0.245

1k+ parts

$0.166

10k+ parts

-

46,515

$0.620

$0.245

$0.166

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Element14

Singapore . 2,476 parts In-Stock

1+ parts

-

100+ parts

$0.103

1k+ parts

$0.098

10k+ parts

-

2,476

-

$0.103

$0.098

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Farnell

UK . 465 parts In-Stock

1+ parts

-

100+ parts

$0.171

1k+ parts

$0.114

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465

-

$0.171

$0.114

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Arrow

USA . 228 parts In-Stock

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-

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$0.069

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228

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$0.069

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Verical

USA . 228 parts In-Stock

1+ parts

-

100+ parts

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$0.069

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228

-

-

$0.069

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.184

100+ parts

-

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-

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550

$0.184

-

-

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TME

Poland . 208 parts In-Stock

1+ parts

$0.586

100+ parts

$0.179

1k+ parts

$0.107

10k+ parts

$0.089

208

$0.586

$0.179

$0.107

$0.089

Bristol Electronics

USA . 67 parts In-Stock

1+ parts

$0.600

100+ parts

$0.300

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-

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67

$0.600

$0.300

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Vyrian

USA . 123,809 parts In-Stock

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-

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123,809

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Chip Stock

USA . 41,000 parts In-Stock

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41,000

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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$0.115

5,000

-

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$0.115

LIBRA Elektronik GmbH

Germany . 102 parts In-Stock

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102

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Distributors (Availability)

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Ampacity Inc.

Singapore . 123,908 parts In-Stock

1+ parts

$0.065

100+ parts

-

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123,908

$0.065

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Semicontronic

India . 123,399 parts In-Stock

1+ parts

$0.065

100+ parts

$0.063

1k+ parts

$0.063

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123,399

$0.065

$0.063

$0.063

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.181

100+ parts

-

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$0.174

10k+ parts

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50

$0.181

-

$0.174

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Argo Parts USA

USA . 4,864 parts In-Stock

1+ parts

$0.184

100+ parts

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10k+ parts

$0.179

4,864

$0.184

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-

$0.179

Aztec Data Supply Inc.

USA . 1,860 parts In-Stock

1+ parts

$0.580

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1,860

$0.580

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Corohmni

South Africa . 28 parts In-Stock

1+ parts

$1.355

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28

$1.355

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.334

100+ parts

$2.124

1k+ parts

$1.914

10k+ parts

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3,000

$2.334

$2.124

$1.914

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RC Electronics

USA . 78,812 parts In-Stock

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78,812

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Lixinc

USA . 11,070 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Continental Prestige Electronics

USA . 2,249 parts In-Stock

1+ parts

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100+ parts

$0.164

1k+ parts

$0.092

10k+ parts

$0.074

2,249

-

$0.164

$0.092

$0.074

Glotronic Ltd.

UK . 2,125 parts In-Stock

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2,125

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Overview

Enhance your electronic designs with the DMP3085LSD-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated is known for delivering high-quality components, and this P-Channel Small Signal Field Effect Transistor is no exception. Ideal for switching applications, this FET offers reliable performance and efficient operation. With its compact design and advanced technology, the DMP3085LSD-13 provides value, benefits, and advantages that will take your projects to the next level. Upgrade your circuits with Diodes Incorporated and experience superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower on-state resistance and higher current capability compared to N-channel FETs.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable in such tasks.

Minimum DS Breakdown Voltage: 30 V

With a breakdown voltage of 30V, this transistor can handle higher voltages without breakdown, adding to its reliability.

Maximum Drain Current (Abs) (ID): 3.9 A

A high maximum drain current allows this transistor to handle higher current loads, suitable for various applications.

Maximum Power Dissipation (Abs): 1.7 W

With a maximum power dissipation of 1.7W, this transistor can handle power efficiently without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range of 150°C ensures that this transistor can be used in a wide range of environments.

Maximum Drain-Source On Resistance: 0.07 ohm

A low on-resistance means less power is wasted as heat when the transistor is conducting, making it more efficient.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP3085LSD-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

3.9 A

Maximum Drain Current (ID):

3.9 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

41 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP3085LSD-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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