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DMP3013SFV-13

Diodes Incorporated

DMP3013SFV-13 by Diodes Incorporated

DMP3013SFV-13 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage, 12A ID, and 0.0095 ohm RDS(on). Ideal for switching applications in small outline packages, it operates b/w -55 to 150 °C with a peak reflow temp of 260C.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 27,000 parts In-Stock

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$0.164

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$0.164

Arrow

USA . 6,000 parts In-Stock

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$0.149

6,000

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$0.149

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Rutronik

Germany . 6,000 parts In-Stock

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$0.196

6,000

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$0.196

NAC Semi

USA . 6,000 parts In-Stock

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$0.218

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$0.218

Chip Stock

USA . 3,783 parts In-Stock

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3,783

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Ampacity Inc.

Singapore . 16,456 parts In-Stock

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$0.123

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16,456

$0.123

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Corohmni

South Africa . 62 parts In-Stock

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$1.652

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62

$1.652

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Eastek

USA . 42,000 parts In-Stock

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$0.210

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42,000

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$0.210

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GreenTree Electronics

Israel . 19,380 parts In-Stock

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Argo Parts USA

USA . 1,765 parts In-Stock

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Continental Prestige Electronics

USA . 1,181 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Discover the innovative DMP3013SFV-13 by Diodes Incorporated, a high-quality P-Channel Field Effect Transistor designed for switching applications. With its single configuration and built-in diode, this transistor offers enhanced performance in a compact package. Perfect for a wide range of electronic devices, this transistor provides reliable operation and efficient power dissipation. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs for quality and reliability. Elevate your designs with the DMP3013SFV-13 and experience the benefits of superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-state resistance and fast switching speeds, making them ideal for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve efficiency in certain applications.

Transistor Application: SWITCHING

Designed for switching applications, this FET can quickly turn on and off, making it suitable for power management and control.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages, adding flexibility in various circuit designs.

Maximum Power Dissipation (Abs): 31 W

The high power dissipation capability ensures the FET can handle heavy loads without overheating, adding reliability to the system.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand harsh environments or high-power applications without degradation.

Maximum Drain Current (ID): 12 A

Capable of handling a maximum drain current of 12A, this FET is suitable for applications requiring high current loads.

Maximum Drain-Source On Resistance: 0.0095 ohm

The low on-resistance of 0.0095 ohm reduces power dissipation and improves efficiency in high-current applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP3013SFV-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.0095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

230 pF

JESD-30 Code:

S-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP3013SFV-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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