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DMP32D4SW-7

Diodes Incorporated

DMP32D4SW-7 by Diodes Incorporated

DMP32D4SW-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 0.25A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.432W. This small outline transistor has a package body made of plastic/epoxy, gull wing terminals, and can withstand temperatures up to 150°C.

Median Price

$0.126

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,310 parts In-Stock

1+ parts

$0.443

100+ parts

$0.171

1k+ parts

$0.113

10k+ parts

-

2,310

$0.443

$0.171

$0.113

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DigiKey

USA . 20,360 parts In-Stock

1+ parts

$0.460

100+ parts

$0.177

1k+ parts

$0.118

10k+ parts

-

20,360

$0.460

$0.177

$0.118

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Mouser Electronics

USA . 14,263 parts In-Stock

1+ parts

$0.460

100+ parts

$0.178

1k+ parts

$0.118

10k+ parts

$0.096

14,263

$0.460

$0.178

$0.118

$0.096

Verical

USA . 477,000 parts In-Stock

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-

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$0.068

477,000

-

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$0.068

Arrow

USA . 2,859 parts In-Stock

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$0.063

2,859

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$0.063

Farnell

UK . 2,840 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.075

10k+ parts

$0.071

2,840

-

$0.126

$0.075

$0.071

Element14

Singapore . 2,840 parts In-Stock

1+ parts

-

100+ parts

$0.125

1k+ parts

$0.078

10k+ parts

$0.076

2,840

-

$0.125

$0.078

$0.076

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.115

100+ parts

-

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10

$0.115

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Vyrian

USA . 150,215 parts In-Stock

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150,215

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Chip Stock

USA . 74,320 parts In-Stock

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74,320

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ComSIT Distribution GmbH

Germany . 23,556 parts In-Stock

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23,556

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IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

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$0.024

9,000

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$0.024

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.031

6,000

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$0.031

Prism Electronics

USA . 20 parts In-Stock

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20

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Distributors (Availability)

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Ampacity Inc.

Singapore . 87,954 parts In-Stock

1+ parts

$0.052

100+ parts

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87,954

$0.052

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Semicontronic

India . 77,070 parts In-Stock

1+ parts

$0.052

100+ parts

$0.051

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$0.050

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77,070

$0.052

$0.051

$0.050

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Modulus Dynamics

Lithuania . 25,359 parts In-Stock

1+ parts

$0.108

100+ parts

$0.108

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$0.108

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25,359

$0.108

$0.108

$0.108

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Corohmni

South Africa . 815 parts In-Stock

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$0.108

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815

$0.108

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Argo Parts USA

USA . 4,156 parts In-Stock

1+ parts

$0.115

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$0.111

4,156

$0.115

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-

$0.111

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.115

100+ parts

-

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$0.109

10k+ parts

$0.106

1,000

$0.115

-

$0.109

$0.106

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.894

100+ parts

$0.814

1k+ parts

$0.733

10k+ parts

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500

$0.894

$0.814

$0.733

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RC Electronics

USA . 53,708 parts In-Stock

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53,708

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Perfect Parts

USA . 29,430 parts In-Stock

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iodParts Technologies Inc.

India . 5,440 parts In-Stock

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Continental Prestige Electronics

USA . 3,025 parts In-Stock

1+ parts

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100+ parts

$0.162

1k+ parts

$0.085

10k+ parts

$0.073

3,025

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$0.162

$0.085

$0.073

Kepictronics

USA . 3,000 parts In-Stock

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Lixinc

USA . 223 parts In-Stock

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223

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Overview

Enhance your electronic projects with Diodes Incorporated's DMP32D4SW-7 P-CHANNEL Small Signal Field Effect Transistor. This high-quality component offers reliable switching capabilities in a compact package, making it ideal for a wide range of applications. With its single configuration and built-in diode, customers can enjoy increased efficiency and performance. Trust in Diodes Incorporated's reputation for excellence and innovation, and unlock the full potential of your designs with the DMP32D4SW-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower on-resistance and are suitable for applications where low power consumption is required.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide protection against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off control circuits.

Surface Mount: YES

Ease of installation and space-saving design for modern electronic devices.

Minimum DS Breakdown Voltage: 30 V

Suitable for applications requiring voltage protection up to 30V.

Maximum Drain Current (Abs) (ID): 0.25 A

Able to handle current up to 0.25A, making it suitable for low current applications.

Maximum Power Dissipation (Abs): 0.432 W

With a maximum power dissipation of 0.432W, it can handle moderate power levels efficiently.

Maximum Drain-Source On Resistance: 2.4 ohm

Low on-resistance helps in reducing power loss and improving efficiency in switching circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments up to 150°C.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP32D4SW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

2.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP32D4SW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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