Loading...

DMP3164LVT-7

Diodes Incorporated

DMP3164LVT-7 by Diodes Incorporated

DMP3164LVT-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage, 0.095 ohm RDS(on), and 2.8A ID max. Ideal for switching applications, it operates in enhancement mode with 150°C max temp and features separate elements with built-in diode in a small outline package.

Median Price

$0.402

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,994 parts In-Stock

1+ parts

$0.660

100+ parts

$0.261

1k+ parts

$0.177

10k+ parts

$0.132

10,994

$0.660

$0.261

$0.177

$0.132

DigiKey

USA . 4,279 parts In-Stock

1+ parts

$0.660

100+ parts

$0.261

1k+ parts

$0.177

10k+ parts

-

4,279

$0.660

$0.261

$0.177

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.114

9,000

-

-

-

$0.114

RS (Exports)

UK . 3,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.143

3,475

-

-

-

$0.143

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 580 parts In-Stock

1+ parts

$0.300

100+ parts

-

1k+ parts

-

10k+ parts

-

580

$0.300

-

-

-

Continental Prestige Electronics

USA . 4,424 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,424

-

-

-

-

Argo Parts USA

USA . 1,522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,522

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Enhance your electronic designs with the high-quality DMP3164LVT-7 P-Channel Small Signal Field Effect Transistor by Diodes Incorporated. This versatile component features a separate, 2-element configuration with a built-in diode, making it ideal for switching applications. With a maximum drain current of 2.8 A and a low on-resistance of 0.095 ohm, this transistor offers exceptional performance. Trust Diodes Incorporated's expertise in semiconductor technology to deliver reliable, efficient solutions for your projects. Upgrade your circuits today with the DMP3164LVT-7 and experience superior functionality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and helps to protect the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high input impedance and low input capacitance, making them ideal for applications where low power consumption is important.

Minimum DS Breakdown Voltage: 30 V

This high breakdown voltage allows the transistor to handle a higher voltage without breaking down, making it suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off, making it efficient for digital circuits and power management.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand higher temperatures, ensuring reliability in various environmental conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP3164LVT-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

FAST SWITCHING

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

2.8 A

Maximum Drain-Source On Resistance:

.095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

33 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.16 W

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP3164LVT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19