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DMP3050LVT-7

Diodes Incorporated

DMP3050LVT-7 by Diodes Incorporated

DMP3050LVT-7 by Diodes Inc. is a P-channel FET with 30V breakdown voltage, 4.5A max drain current, and 0.05 ohm on-resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation. Features include single configuration with built-in diode, small outline package style, and matte tin terminal finish for surface mount assembly.

Median Price

$0.141

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,675 parts In-Stock

1+ parts

$0.721

100+ parts

$0.286

1k+ parts

$0.195

10k+ parts

-

1,675

$0.721

$0.286

$0.195

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Future Electronics

Canada . 69,000 parts In-Stock

1+ parts

-

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$0.300

69,000

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$0.300

DigiKey

USA . 9,302 parts In-Stock

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$0.141

9,302

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$0.141

Verical

USA . 6,000 parts In-Stock

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$0.090

6,000

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$0.090

Arrow

USA . 3,000 parts In-Stock

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$0.129

3,000

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$0.129

Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.244

100+ parts

-

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15

$0.244

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TME

Poland . 2,374 parts In-Stock

1+ parts

$0.650

100+ parts

$0.258

1k+ parts

$0.171

10k+ parts

$0.133

2,374

$0.650

$0.258

$0.171

$0.133

Vyrian

USA . 315,837 parts In-Stock

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315,837

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Chip Stock

USA . 132,500 parts In-Stock

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132,500

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NAC Semi

USA . 60,000 parts In-Stock

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$0.610

60,000

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$0.610

Prism Electronics

USA . 128 parts In-Stock

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128

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Distributors (Availability)

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Semicontronic

India . 316,165 parts In-Stock

1+ parts

$0.063

100+ parts

$0.061

1k+ parts

$0.061

10k+ parts

-

316,165

$0.063

$0.061

$0.061

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Ampacity Inc.

Singapore . 315,812 parts In-Stock

1+ parts

$0.063

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315,812

$0.063

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Continental Prestige Electronics

USA . 6,534 parts In-Stock

1+ parts

$0.244

100+ parts

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$0.239

6,534

$0.244

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-

$0.239

Argo Parts USA

USA . 4,298 parts In-Stock

1+ parts

$0.244

100+ parts

-

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$0.236

4,298

$0.244

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$0.236

Netroflash

USA . 500 parts In-Stock

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$0.244

100+ parts

-

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500

$0.244

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Corohmni

South Africa . 283 parts In-Stock

1+ parts

$0.668

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283

$0.668

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Modulus Dynamics

Lithuania . 12,740 parts In-Stock

1+ parts

$0.676

100+ parts

$0.676

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$0.676

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12,740

$0.676

$0.676

$0.676

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Aztec Data Supply Inc.

USA . 56 parts In-Stock

1+ parts

$1.340

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56

$1.340

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RC Electronics

USA . 76,328 parts In-Stock

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76,328

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Kepictronics

USA . 21,766 parts In-Stock

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21,766

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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16,800

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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Robosynatics

Brazil . 2,896 parts In-Stock

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2,896

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Lucentia Tech

USA . 2,896 parts In-Stock

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100+ parts

$0.434

1k+ parts

$0.425

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$0.425

2,896

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$0.434

$0.425

$0.425

Lixinc

USA . 555 parts In-Stock

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555

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the unparalleled performance and reliability of the DMP3050LVT-7 by Diodes Incorporated, a leading manufacturer in the industry. This P-Channel Small Signal Field Effect Transistor is perfect for switching applications, offering a minimum DS breakdown voltage of 30V and a maximum drain current of 4.5A. With its cutting-edge technology and high-quality construction, this transistor provides exceptional value and efficiency for your electronic projects. Experience seamless operation and superior functionality with the DMP3050LVT-7, setting new standards in the field of semiconductor components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low input capacitance and high input impedance, making them suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in the configuration allows for convenient and efficient switching operations within the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and efficient on/off operations.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures reliable operation and protection against voltage spikes in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and alignment on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering onto circuit boards, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers high input impedance and low on-state resistance, enhancing the performance of the transistor in switching applications.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in circuit connections and configurations, making it versatile for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and performance, allowing for reliable operation in switching applications.

Transistor Element Material: SILICON

Silicon-based transistor elements provide high reliability and endurance, ensuring long-term performance and stability.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Drain Current (ID): 4.5 A

With a maximum drain current of 4.5A, this transistor can handle high current loads with efficiency and reliability.

Maximum Drain-Source On Resistance: 0.05 ohm

The low on-resistance of 0.05 ohm reduces power loss and heat generation, ensuring efficient performance in switching applications.

Terminal Position: DUAL

Dual terminal position allows for versatile connection options, enabling flexibility in circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and thermal management during assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes without compromising its performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability, making this transistor suitable for automotive and industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP3050LVT-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP3050LVT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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