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BCX5116TA

Diodes Incorporated

BCX5116TA by Diodes Incorporated

BCX5116TA by Diodes Inc. is a PNP BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 100, and IC of 1A, it operates in temperatures from -55 to 150°C. Its small outline package with matte tin finish makes it suitable for surface mount designs requiring high-speed switching up to 150MHz.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

1,624

-

-

-

$0.039

Verical

USA . 1,624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.039

1,624

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-

-

$0.039

Element14

Singapore . 250 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.085

10k+ parts

$0.084

250

-

$0.122

$0.085

$0.084

Farnell

UK . 140 parts In-Stock

1+ parts

-

100+ parts

$0.145

1k+ parts

$0.085

10k+ parts

$0.084

140

-

$0.145

$0.085

$0.084

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 545 parts In-Stock

1+ parts

$0.103

100+ parts

-

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545

$0.103

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Chip Stock

USA . 325,000 parts In-Stock

1+ parts

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325,000

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Euro-Tech

UK . 1,100 parts In-Stock

1+ parts

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1,100

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

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ComSIT USA

USA . 1,000 parts In-Stock

1+ parts

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1,000

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Vyrian

USA . 748 parts In-Stock

1+ parts

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748

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VNN

France . 658 parts In-Stock

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658

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Bristol Electronics

USA . 485 parts In-Stock

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485

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,164 parts In-Stock

1+ parts

$0.072

100+ parts

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2,164

$0.072

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Continental Prestige Electronics

USA . 6,149 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

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10k+ parts

$0.101

6,149

$0.103

-

-

$0.101

Argo Parts USA

USA . 4,488 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

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10k+ parts

$0.100

4,488

$0.103

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$0.100

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.103

100+ parts

$0.101

1k+ parts

-

10k+ parts

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2,000

$0.103

$0.101

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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30,000

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Eastek

USA . 27,000 parts In-Stock

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27,000

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GreenTree Electronics

Israel . 26,000 parts In-Stock

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26,000

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Lixinc

USA . 10,958 parts In-Stock

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10,958

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Perfect Parts

USA . 10,839 parts In-Stock

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10,839

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Kepictronics

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

-

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Overview

Unlock the power of advanced technology with the BCX5116TA by Diodes Incorporated. Designed for high-performance switching applications, this PNP Power BJT offers unmatched quality and reliability. Whether you're looking to optimize your power management systems or enhance the efficiency of your electronic devices, the BCX5116TA delivers exceptional value and performance. Trust in Diodes Incorporated to provide cutting-edge solutions that exceed expectations. Experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit functionality.

Configuration: SINGLE

Simplified design and ease of integration into circuits.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it ideal for power control applications.

Surface Mount: YES

Suitable for automated assembly processes, saving time and cost during production.

Maximum VCEsat: 0.5 V

Low voltage drop across the collector-emitter junction, reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Compact form factor for space-saving designs.

No. of Terminals: 3

Simplified connectivity in circuits.

Maximum Power Dissipation (Abs): 2 W

Can handle higher power levels, suitable for applications requiring greater power handling capability.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring higher voltage tolerances.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme temperature environments.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels in circuits.

Nominal Transition Frequency (fT): 150 MHz

High frequency capability for fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5116TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX5116TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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