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7MBR35SB120-01

Collmer Semiconductor

7MBR35SB120-01 by Collmer Semiconductor

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1200 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 7MBR35SB120-01 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Collmer Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X35

No. of Elements:

7

No. of Terminals:

35

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

530 ns

Nominal Turn On Time (ton):

600 ns

Trade Compliance

7MBR35SB120-01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Collmer Semiconductor

Fuji Electric (Japan) and Collmer Semiconductor (Dallas, TX) announced that the distribution business of Collmer has been acquired by Fuji and will be known as Fuji Semiconductor Inc. The manufacturing division of Collmer Semiconductor will continue under the name of High Voltage Power Systems Inc. Tetsunosuke Ishibashi, executive vice president of Fuji Electric, said, "We expect to make continuing progress in the US market with uninterrupted customer service as we move forward. We welcome the people of Collmer Semiconductor into the Fuji family.

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