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300 MHz Small Signal Bipolar Junction Transistors (BJT) 96

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC847AQ-7-F by Diodes Incorporated

BC847AQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

BC848CQ-7-F by Diodes Incorporated

BC848CQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

MMBT2222A-TP-HF by Micro Commercial Components

MMBT2222A-TP-HF

Micro Commercial Components

MMBT2222A-TP-HF by Micro Commercial Components is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

300 MHz

285 ns

35 ns

SMBT3904E6433HTMA1 by Infineon Technologies

SMBT3904E6433HTMA1

Infineon Technologies

Infineon's SMBT3904E6433HTMA1 is a NPN BJT transistor with max. Vce of 40V, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its fast turn-on/off times and small outline package style. Suitable for surface mount designs with Gull Wing terminals in plastic/epoxy body material.

.2 A

40 V

SINGLE

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

250 ns

70 ns

2SCR554PFRAT100 by ROHM

2SCR554PFRAT100

ROHM

ROHM 2SCR554PFRAT100 is a NPN BJT transistor with hFE of 120, VCE of 80V, and IC of 1.5A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 300MHz.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2SA2205-E by Onsemi

2SA2205-E

Onsemi

The Onsemi 2SA2205-E is a PNP BJT transistor with hFE of 200, VCE of 100V, and IC of 2A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and through-hole terminals make it suitable for high-frequency (300MHz) in-line package designs.

2 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

NO

Tin/Bismuth (Sn/Bi)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

300 MHz

SMBT3904SH6327XTSA1 by Infineon Technologies

SMBT3904SH6327XTSA1

Infineon Technologies

Infineon's SMBT3904SH6327XTSA1 is a NPN BJT transistor for switching applications. With hFE of 30, VCE of 40V, and fT of 300MHz, it offers fast ton of 70ns and toff of 250ns. Its Gull Wing terminals in a small outline package make it ideal for surface mount designs.

.2 A

40 V

SINGLE

30

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

BCW72T116 by ROHM

BCW72T116

ROHM

BCW72T116 by ROHM is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and fT of 300MHz. Ideal for amplifier applications, it has a max operating temp of 150°C and max VCE of 45V. This small outline transistor in gull wing package is surface mountable.

LOW NOISE

.1 A

4 pF

45 V

SINGLE

200

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

AMPLIFIER

SILICON

300 MHz

.3 V

2SC4098T106P by ROHM

2SC4098T106P

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

.05 A

2.2 pF

25 V

SINGLE

82

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

300 MHz

.3 V

MMST2222AT146 by ROHM

MMST2222AT146

ROHM

ROHM MMST2222AT146 is a NPN BJT transistor for switching applications. Features include VCEsat of 0.6V, hFE of 40, and IC of 0.6A. With a max operating temperature of 150°C, it has a transition frequency of 300MHz making it suitable for high-speed switching circuits.

.6 A

7 pF

40 V

SINGLE

40

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

285 ns

35 ns

.6 V

MMST3904T146 by ROHM

MMST3904T146

ROHM

ROHM MMST3904T146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.2A. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz). Suitable for surface mount designs in small outline packages.

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

.3 V

MMBT3904TT1 by Onsemi

MMBT3904TT1

Onsemi

MMBT3904TT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. With a small outline package style and Gull Wing terminal form, it operates at up to 150°C.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

BC547BTAR by Fairchild Semiconductor

BC547BTAR

Fairchild Semiconductor

BC547BTAR by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and max collector-emitter voltage of 45V. Ideal for switching applications, it offers a min DC current gain of 200 and operates at temperatures up to 150°C.

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC547BTFR by Fairchild Semiconductor

BC547BTFR

Fairchild Semiconductor

Fairchild Semiconductor's BC547BTFR is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications, it offers a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V.

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC548CTAR by Fairchild Semiconductor

BC548CTAR

Fairchild Semiconductor

BC548CTAR by Fairchild Semiconductor is a NPN BJT transistor with hFE of 420. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications due to its max collector-emitter voltage of 30V and collector current of 0.1A.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CTFR by Fairchild Semiconductor

BC549CTFR

Fairchild Semiconductor

BC549CTFR by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A, ideal for switching applications. It has a min DC current gain of 420 and can handle up to 0.625W power dissipation. The package style is cylindrical with matte tin terminal finish, suitable for through-hole mounting.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

MMDT3946LP4-7 by Diodes Incorporated

MMDT3946LP4-7

Diodes Incorporated

NPN AND PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-N6

e4

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

300 MHz

70 ns

250 ns

DMB2227A-7 by Diodes Incorporated

DMB2227A-7

Diodes Incorporated

DMB2227A-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max operating temp of 150°C, it offers a transition frequency of 300 MHz and can handle up to 0.6A collector current.

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

285 ns

35 ns

2DD1621T-13 by Diodes Incorporated

2DD1621T-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

25 V

SINGLE

65

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

300 MHz

2N3904,116 by NXP Semiconductors

2N3904,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;

.2 A

4 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

2N3904,412 by NXP Semiconductors

2N3904,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

PN2222A,116 by NXP Semiconductors

PN2222A,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,126 by NXP Semiconductors

PN2222A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,412 by NXP Semiconductors

PN2222A,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PZT3904,115 by NXP Semiconductors

PZT3904,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Case Connection: COLLECTOR;

COLLECTOR

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

1.5 W

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

BC546B-AP by Micro Commercial Components

BC546B-AP

Micro Commercial Components

BC546B-AP by Micro Commercial Components is a NPN bipolar junction transistor (BJT) with a min DC current gain of 200. It is commonly used as an amplifier in various applications. With a max operating temperature of 150°C and a max collector-emitter voltage of 65V, it offers reliable performance.

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

300 MHz

MMDT3946-TP by Micro Commercial Components

MMDT3946-TP

Micro Commercial Components

MMDT3946-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 40V. Ideal for switching applications, it offers a transition frequency of 300MHz and operates at temperatures up to 150°C.

.2 A

40 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

PN2222ARLRA by Onsemi

PN2222ARLRA

Onsemi

PN2222ARLRA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz). Package style: cylindrical, terminals: 3 through-hole bottom tin lead.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

PN2222ARLRP by Onsemi

PN2222ARLRP

Onsemi

PN2222ARLRP by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 75. It is used for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating at up to 150°C, it offers a transition frequency of 300MHz for efficient performance in various electronic circuits.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MMBT2222AT-7 by Diodes Incorporated

MMBT2222AT-7

Diodes Incorporated

Diodes Inc. MMBT2222AT-7 is a NPN BJT with max. Vce of 40V, Ic of 0.6A, and fT of 300MHz. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation capabilities. Suitable for surface mount designs requiring fast switching speeds and moderate current handling.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMBT3904T-7 by Diodes Incorporated

MMBT3904T-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

MMDT3904-7 by Diodes Incorporated

MMDT3904-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

BC548CBU by Fairchild Semiconductor

BC548CBU

Fairchild Semiconductor

BC548CBU by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A. With a min DC current gain of 420, it's ideal for switching applications at up to 150°C operating temperature. The through-hole package style makes it easy to use in various electronic circuits.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CBU by Fairchild Semiconductor

BC549CBU

Fairchild Semiconductor

BC549CBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 420 and max IC of 0.1A. It is used for switching applications, has a max VCE of 30V, and operates up to 150°C. The package is cylindrical with through-hole terminals in matte tin finish.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

MMBT3904-7 by Diodes Incorporated

MMBT3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

DMMT3904W-7 by Diodes Incorporated

DMMT3904W-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

MMBT2222A-7 by Diodes Incorporated

MMBT2222A-7

Diodes Incorporated

Diodes Inc.'s MMBT2222A-7 is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. With Gull Wing terminals in a small outline package, it offers fast turn-on/off times of 35ns/285ns.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MMBT4124-7 by Diodes Incorporated

MMBT4124-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMDT2222A-7 by Diodes Incorporated

MMDT2222A-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 285 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMST2222A-7 by Diodes Incorporated

MMST2222A-7

Diodes Incorporated

Diodes Incorporated MMST2222A-7 is a NPN BJT transistor with hFE of 40, VCE of 40V, and IC of 0.6A. Ideal for high-frequency applications up to 300MHz with fast ton of 35ns and toff of 285ns. Suitable for surface mount designs in small outline packages.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMDT3946-7 by Diodes Incorporated

MMDT3946-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT4124-7 by Diodes Incorporated

MMDT4124-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMST3904-7 by Diodes Incorporated

MMST3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: Tin/Lead (Sn/Pb);

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

Not Qualified

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

300 MHz

70 ns

MMST3906-7 by Diodes Incorporated

MMST3906-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

300 ns

70 ns

MMST4124-7 by Diodes Incorporated

MMST4124-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

NST3904DXV6T5 by Onsemi

NST3904DXV6T5

Onsemi

The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NST3946DXV6T1 by Onsemi

NST3946DXV6T1

Onsemi

NST3946DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a small outline package with 6 terminals. With max power dissipation of 0.5W, max collector-emitter voltage of 40V, and transition frequency of 300MHz, it offers efficient performance in various electronic circuits.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NST3946DXV6T5 by Onsemi

NST3946DXV6T5

Onsemi

NST3946DXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150 °C with a max collector-emitter voltage of 40V and transition frequency of 300MHz.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns