Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SEF120
STMicroelectronics
STMicroelectronics' SEF120 is a N-CHANNEL FET with 8A ID and 40W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems in automotive or industrial settings.
SINGLE
8 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
40 W
FET General Purpose Power
NO
SP201
Polyfet R F Devices
SP201 by Polyfet R F Devices is a single N-channel power FET with 1.2A max drain current and 20W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.
1.2 A
20 W
TPC8207(TE12L)
Toshiba
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
6 A
1.5 W
YES
2N3819-D27Z
Fairchild Semiconductor
2N3819-D27Z by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 0.05 A and max power dissipation of 0.35 W. It operates in enhancement mode and uses metal-oxide semiconductor technology. It is commonly used in applications requiring low-power switching or amplification.
.05 A
e3
.35 W
Matte Tin (Sn)
FQD2N60CTF
FQD2N60CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.9A max drain current and 44W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates in enhancement mode at up to 150°C, making it suitable for various industrial and consumer electronics.
1.9 A
260
44 W
MATTE TIN
NTR4503NT3
Onsemi
NTR4503NT3 by Onsemi is an N-CHANNEL FET with 2A max drain current and 0.73W power dissipation. Ideal for applications requiring a single configuration, surface mount capability, and operating temperature up to 150 °C. Perfect for enhancing performance in power management systems.
2 A
e0
235
.73 W
TIN LEAD
BF1005S-E6327
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
.025 A
DUAL GATE, ENHANCEMENT MODE
.2 W
BF1005SR-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Drain Current (ID): .025 A;
AO3422L
Alpha & Omega Semiconductor
AO3422L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 55V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.16 ohm Drain-Source On Resistance.
SINGLE WITH BUILT-IN DIODE
55 V
2.1 A
.16 ohm
12.6 pF
TO-236
R-PDSO-G3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
1.25 W
10 A
GULL WING
DUAL
SWITCHING
SILICON
AO4822A
AO4822A by Alpha & Omega Semiconductor is an N-CHANNEL FET with 8A ID and 2W power dissipation. Ideal for applications requiring high drain current and operating at up to 150°C, such as power management systems in various electronic devices.
2 W
AO4822AL
AO4822AL by Alpha & Omega Semiconductor is an N-CHANNEL FET with 8.5A max drain current and 2W power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150°C, making it suitable for various power management systems.
8.5 A
AON7408
AON7408 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 18A ID and 11W power dissipation. Ideal for applications requiring high drain current and low power consumption in surface mount configurations, such as power supplies and motor control systems operating at up to 150°C.
18 A
11 W
2SK3305-S-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
5 A
75 W
AO4490L
AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
30 V
16 A
.0072 ohm
238 pF
R-PDSO-G8
8
2.8 W
120 A
FDC2512-F095
FDC2512-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.4A max drain current and 1.6W max power dissipation in SINGLE configuration. It operates in ENHANCEMENT MODE, suitable for applications requiring up to 150°C operating temperature like power management systems.
1.4 A
1.6 W
FDC3512-F095
FDC3512-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 3A max drain current and 1.6W max power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for power management in various electronic devices.
3 A
FDC3612-F095
FDC3612-F095 by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 2.6A and max power dissipation of 1.6W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
2.6 A
FDC5612-F095
FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
4.3 A
FDC655BN-NBNN007
FDC655BN-NBNN007 by Fairchild Semiconductor is a N-CHANNEL Power FET with 6.3A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for applications requiring high efficiency and compact design, such as power supplies and motor control systems operating up to 150°C.
6.3 A
30
NDS355AN-NB9L007A
NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
1.7 A
.5 W
Tin (Sn)
FQPF6N90CT
FQPF6N90CT by Fairchild Semiconductor is a N-CHANNEL Power FET with 6A max drain current and 56W max power dissipation. Ideal for applications requiring high power handling such as motor control systems or power supplies due to its enhancement mode operation and MOSFET technology.
56 W
FDS8984-F40
FDS8984-F40 by Fairchild Semiconductor is an N-CHANNEL Power FET with 7A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power supplies and motor control systems. Operating at up to 150°C, it offers enhanced performance in demanding environments.
7 A
VNP10N06-E
VNP10N06-E by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 42W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as motor control systems or power management circuits.
42 W
VNN3NV04TR-E
VNN3NV04TR-E by STMicroelectronics is an N-CHANNEL FET with 7W power dissipation, operating at max 150 °C. It features SINGLE configuration and ENHANCEMENT MODE, suitable for surface mount applications. Ideal for power management in various electronic devices.
7 W
BF5020-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .025 A;
DEPLETION MODE
BF5020R-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; Operating Mode: DEPLETION MODE;
BF5030-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
BF5030R-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
SP8K5FU6TB
ROHM
ROHM SP8K5FU6TB is an N-CHANNEL FET with 3.5A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency in a compact design, such as power management systems or motor control circuits. Operating at up to 150°C, it offers reliable performance in demanding environments.
3.5 A
10
SP8K2FU6TB
ROHM SP8K2FU6TB is an N-CHANNEL FET with 6A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150°C. Suitable for surface mount designs, it features metal-oxide semiconductor technology.
RDX045N60FU6
ROHM's RDX045N60FU6 is a single N-channel power FET with 4.5A max drain current and 35W max power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and reliability at up to 150°C operating temperature.
4.5 A
35 W
BLF6G20-180PN,112
NXP Semiconductors
N-CHANNEL; Surface Mount: NO; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
225 Cel
BLF6G20S-45,112
NXP Semiconductors' BLF6G20S-45,112 is a single N-channel power FET with 13A max drain current. Operating in enhancement mode, it can handle up to 225°C. Ideal for high-power applications requiring efficient switching and control.
13 A
BLF6G20S-45,118
BLF6G20S-45,118 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 13 A and operates up to 225 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching tasks.
PHP165NQ08T,127
PHP165NQ08T,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 75 A and power dissipation of 250 W, operating up to 150 °C. This transistor is perfect for efficient power management in various electronic devices.
75 A
250 W
AOTF4N60
AOTF4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 35W power dissipation. It operates in enhancement mode with a max temperature of 150°C. Ideal for power applications requiring high efficiency and performance.
4 A
AOTF5N50
AOTF5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 18A IDM and 203mJ EAS, suitable for power applications requiring high drain current and energy ratings. Ideal for use in circuits where low on-resistance and fast switching times are critical.
203 mJ
ISOLATED
500 V
1.5 ohm
5.9 pF
TO-220AB
R-PSFM-T3
FLANGE MOUNT
NOT SPECIFIED
THROUGH-HOLE
70.4 ns
52.4 ns
IRF6727MTR1PBF
International Rectifier
IRF6727MTR1PBF by International Rectifier is a N-CHANNEL FET with 180A ID, 89W Pd, and 150°C max temp. Ideal for power applications requiring high drain current in enhancement mode operation.
180 A
89 W
BLF888,112
BLF888,112 by NXP Semiconductors is a Power FET with N-CHANNEL polarity. It operates in ENHANCEMENT MODE with 500W power dissipation. Ideal for applications requiring high power handling and efficient performance at up to 200°C operating temperature.
200 Cel
500 W
BLF6G27-75,112
NXP Semiconductors BLF6G27-75,112 is a single N-channel FET with 18A max drain current and 75W power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temperature of 200°C.
BLF6G27LS-75,112
NXP Semiconductors BLF6G27LS-75,112 is a 75W N-CHANNEL FET with 18A max drain current. Ideal for power applications, it operates in enhancement mode at up to 200°C.
BLF6G10-160RN,112
BLF6G10-160RN,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 39 A and operates at temperatures up to 225 °C, making it ideal for high-power applications in RF amplifiers.
39 A
BLF6G10LS-160RN,11
BLF6G10LS-160RN,11 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 39 A and operates at temperatures up to 225 °C, making it ideal for high-power applications in RF amplifiers.
BLF6G10-135RN,112
BLF6G10-135RN,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 32 A and operates up to 225 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching tasks.
32 A
BLF6G22-180PN,135
N-CHANNEL; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
FET General Purpose Powers
BF904A,215
BF904A,215 by NXP Semiconductors is an N-channel FET designed for dual gate enhancement mode applications. It supports a max drain current of 30 mA and power dissipation of 200 mW, operating up to 150 °C. Ideal for RF amplification in compact devices.
.03 A
BF904AR,215
BF904AR,215 by NXP Semiconductors is a N-CHANNEL Power FET with SINGLE configuration. It operates in DUAL GATE, ENHANCEMENT MODE with max ID of 0.03A and Pd of 0.2W. Ideal for applications requiring METAL-OXIDE SEMICONDUCTOR technology, it can handle up to 150°C operating temperature.
BLF6G10-200RN,112
BLF6G10-200RN,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 49 A and operates at temperatures up to 225 °C, making it ideal for high-power applications in RF amplifiers.
49 A
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