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FDC655BN-NBNN007

Fairchild Semiconductor

FDC655BN-NBNN007 by Fairchild Semiconductor

FDC655BN-NBNN007 by Fairchild Semiconductor is a N-CHANNEL Power FET with 6.3A max drain current and 1.6W max power dissipation in enhancement mode. Ideal for applications requiring high efficiency and compact design, such as power supplies and motor control systems operating up to 150°C.

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Overview

Revolutionize your power management solutions with the FDC655BN-NBNN007 by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-quality Power Field Effect Transistors (FET) that offer unparalleled performance and reliability. Whether you're looking to enhance the efficiency of your electronic devices or optimize power distribution systems, this N-CHANNEL transistor is the perfect choice. With a maximum drain current of 6.3 A and a maximum power dissipation of 1.6 W, this Enhancement Mode transistor can handle even the most demanding applications with ease. Trust Fairchild Semiconductor for cutting-edge technology that delivers exceptional value and benefits to customers worldwide.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-state resistance and higher switching speeds compared to P-channel FETs, making them a more efficient choice for many applications.

Configuration: SINGLE

Single configuration FETs are simpler to use and require fewer external components, making them more cost-effective and easier to integrate into a circuit.

Surface Mount: YES

Surface mount FETs are compact and easy to solder onto PCBs, allowing for space-saving designs and efficient manufacturing processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs require a positive voltage at the gate to switch on, making them easier to control and more suitable for many circuit applications.

Maximum Drain Current (Abs) (ID): 6.3 A

With a high maximum drain current, this FET can handle higher power loads and is suitable for applications that require a high current carrying capacity.

Maximum Power Dissipation (Abs): 1.6 W

The low power dissipation of this FET ensures efficient operation and helps prevent overheating, leading to improved reliability and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high performance, low power consumption, and fast switching speeds, making it an excellent choice for modern electronics applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures and is suitable for demanding environments and extended usage scenarios.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and corrosion resistance, ensuring reliable and long-lasting connections in a variety of operating conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The short peak reflow time of this FET allows for quick and efficient soldering processes, reducing manufacturing time and ensuring consistent solder joints.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this FET can withstand the soldering process without damage and is suitable for lead-free soldering techniques.

Technical Specifications

Power Field Effect Transistors (FET) FDC655BN-NBNN007 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6.3 A

Maximum Drain Current (ID):

6.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FDC655BN-NBNN007 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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