Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FDC638APZ by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 4.5A ID, and 72 ohm RDS(on). It is used in applications requiring high power dissipation up to 1.6W, such as small outline packages for compact designs in enhancement mode operation at temperatures up to 150°C.
Median Price
$0.286
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34
In-Stock Inventory
1k+
Newark
1+ parts
$0.760
100+ parts
$0.358
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$0.236
10k+ parts
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DigiKey
$0.890
$0.247
$0.187
Mouser Electronics
$0.348
$0.194
Adafruit Industries
$1.095
$1.040
Arrow
$0.186
Verical
Farnell
$0.246
$0.189
$0.176
Element14
$0.508
$0.341
$0.335
Flip Electronics (Authorized)
Rochester
$0.230
$0.191
$0.170
Future Electronics
$0.145
EBV Elektronik
Master Electronics
$0.326
$0.174
Chip1Stop
$0.212
Digiode
$0.179
Nova Conductors
$0.254
TME
$0.830
$0.353
$0.216
$0.200
IBS Electronics
$0.457
$0.345
$0.244
NAC Semi
Vyrian
Flip Electronics
Pegasus Components GmbH
Semtec, LLC
First Choice Components Inc.
Bristol Electronics
Cyclops Electronics Ltd
Semi Source
ComSIT Distribution GmbH
Rebound Electronics
Mentor Electronics Marketing, LLC
LWI Electronics Inc
Sensible Micro Corp
Prism Electronics
NexGen Digital
Ampacity Inc.
$0.139
Semicontronic
$0.147
$0.143
Corohmni
$0.163
Corphita
$0.169
Argo Parts USA
Advanced Electronics
$0.765
$0.727
Modulus Dynamics
$1.783
Aztec Data Supply Inc.
$1.851
Kepictronics
Perfect Parts
RC Electronics
$0.260
$0.240
Glotronic Ltd.
Formix International (Excess)
Problanco Electronics
Kulean Microsystems
Lixinc
Assy Fe
Eastek
GreenTree Electronics
A-Z Elektronik GmbH
Supply Digital
Continental Prestige Electronics
$0.323
$0.201
Netroflash
$0.249
$0.241
Authorized Procurement Solutions
Alle Elektronik GmbH
SupplyDigital Components
UHIMA Technologies
TANS Electronics
This material provides durability and protection for the FET, making it suitable for a variety of applications.
P-channel FETs are known for their low on-resistance and high current carrying capability, making them efficient for power applications.
The built-in diode allows for reverse polarity protection and simplifies circuit design.
Enhancement mode FETs are easier to control and offer high input impedance, making them ideal for switching applications.
Low on-resistance results in lower power losses and improved efficiency in power management.
With a high power dissipation rating, this FET can handle significant power without overheating.
The high temperature rating allows for reliable performance in various operating conditions.
Power Field Effect Transistors (FET) FDC638APZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
FDC638APZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mold Compound 08/April/2008 Logo 17/Aug/2017
PCN Assembly/Origin - Mult Dev Assembly/Test Chg 30/Apr/2019
PCN Packaging - Binary Year Code Marking 15/Jan/2014 Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
FDLL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DS18B20U+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;
LL4148
Silicon Standard
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
ABS06-32.768KHZ-T
Abracon
Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.
SMBJ18CA
Uniohm
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H743BIT6
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
Gec Plessey Semiconductors
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
LD1117S33TR
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM555CM
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MBRS1100T3G
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N7002
Plessey Semiconductors Discrete Components Div
Other Transistors;
Nexperia
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
AUIRF7759L2TR
Infineon Technologies
AUIRF7759L2TR by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage and 640A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.0023 ohm On Resistance, and operates in ENHANCEMENT MODE.
BSP716NH6327XTSA1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
IRF7416TRPBF-1
Infineon's IRF7416TRPBF-1 is a P-CHANNEL FET with 10A max drain current and 2.5W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems operating up to 150°C.
SI7489DP-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI7489DP-T1-E3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 83W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.
ZXMP6A17E6TA
Diodes Incorporated
ZXMP6A17E6TA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13.6A IDM, 3A ID, and 0.125 ohm RDS(ON). With a max power dissipation of 1.92W and operating temperature up to 150°C, it's suitable for various electronic designs.
FDMS86300DC
FDMS86300DC by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM Pulsed Drain Current, 0.0031 ohm RDS(ON), and 240mJ EAS Avalanche Energy Rating. With a max power dissipation of 125W and operating temperature up to 150°C, it is suitable for high-power switching circuits in various electronic devices.
FDN5618P_NL
Fairchild Semiconductor's FDN5618P_NL is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 1.25A and 0.17 ohm On Resistance. The transistor operates in ENHANCEMENT MODE, has a Max Power Dissipation of 0.5W, and can handle up to 10A Pulsed Drain Current.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
FQD12N20LTM
FQD12N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.32 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 55W and can withstand temperatures from -55 to 150°C.
FDD4685-F085P
FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
IRF740SPBF
Vishay Intertechnology's IRF740SPBF is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 520mJ EAS, and 0.55 ohm RDS(on). With a max power dissipation of 125W and operating temp of 150°C, it offers reliable performance in various electronic systems.
NDT3055
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G4;
IRF3205ZSPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF5210STRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE; Package Shape: RECTANGULAR;
FDMS86252L
FDMS86252L by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 30A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 50W and can withstand temperatures up to 150°C.
G3R75MT12K
Genesic Semiconductor
Power Field-Effect Transistors;
FDP20N50F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 1110 mJ;
SUD50P06-15-GE3
Vishay Intertechnology's SUD50P06-15-GE3 is a P-channel Power FET with 60V DS breakdown voltage and 80A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.015 ohm max RDS(on), and operates in enhancement mode.
NDT452AP
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Pulsed Drain Current (IDM): 15 A; Package Body Material: PLASTIC/EPOXY;
NDT3055L_NL
Fairchild Semiconductor's NDT3055L_NL is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 25A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it ideal for high-power switching circuits.
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FDC658AP-G
Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
FDC6561AN-NB5S007A
FDC6561AN-NB5S007A by Fairchild Semiconductor is an N-CHANNEL Power FET with 2.5A max drain current and 0.96W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, operating at up to 150°C with metal-oxide semiconductor technology.
FDC638APZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
FDC608PZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): 30;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .043 ohm; Qualification: Not Qualified;
FDC637AN
FDC637AN by Onsemi is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 6.2A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 1.6W. Suitable for surface mount with GULL WING terminals, this MOSFET offers fast turn on/off times of 42ns/62ns at temperatures ranging from -55 to 150°C.
FDC655BN-NBNN007
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
FDC655BN_NL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC642P-F085
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Operating Temperature: 150 Cel;
FDC642P-F085P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 20 V;
FDC642P_F085
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC6036P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
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