Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PSMN3R2-25YLC,115
NXP Semiconductors
PSMN3R2-25YLC,115 from NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency power applications. It supports a max drain current of 100 A and operates at temperatures up to 175 °C, making it ideal for demanding environments. Its surface mount configuration ensures easy integration into various electronic devices.
SINGLE
100 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
175 Cel
260
N-CHANNEL
79 W
FET General Purpose Power
YES
TIN
30
PSMN3R7-30YLC,115
PSMN3R7-30YLC,115 by NXP Semiconductors is a single N-channel MOSFET ideal for power applications. It supports a max drain current of 100 A and power dissipation of 79 W, operating up to 175 °C. Perfect for efficient switching in various electronic devices.
PHD18NQ10T,118
PHD18NQ10T,118 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and power dissipation of 79 W, making it ideal for high-efficiency power applications. With an operating temp up to 175 °C, it's perfect for demanding environments.
18 A
NVD4805NT4G
Onsemi
NVD4805NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 175A Max Pulsed Drain Current, and 0.0074 ohm Max RDS(on). Ideal for high-power switching circuits in automotive and industrial electronics due to its AEC-Q101 compliance.
288 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
95 A
12.7 A
.0074 ohm
R-PSSO-G2
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
175 A
AEC-Q101
GULL WING
SWITCHING
SILICON
IPB052N04NGATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
AVALANCHE RATED
35 mJ
40 V
70 A
.0052 ohm
TO-263AB
400 A
Not Qualified
MATTE TIN
IPI084N06L3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; JESD-609 Code: e3; Package Style (Meter): IN-LINE;
LOGIC LEVEL COMPATIBLE
43 mJ
60 V
50 A
.0084 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
200 A
NO
THROUGH-HOLE
IPD90N06S407ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;
67 mJ
90 A
.0069 ohm
70 pF
TO-252
-55 Cel
NOT SPECIFIED
360 A
IPP70N04S307AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
145 mJ
82 A
.006 ohm
130 pF
280 A
IRL530NL
International Rectifier
IRL530NL by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.12 ohm RDS(on), and 175°C max operating temp.
HIGH RELIABILITY
150 mJ
100 V
17 A
.12 ohm
e0
60 A
TIN LEAD
NVMFS5C646NLT1G
NVMFS5C646NLT1G by Onsemi is a N-CHANNEL FET with 93A max drain current and 79W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.
93 A
Matte Tin (Sn) - annealed
NVMFS5C646NLT3G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260;
NVMFS5C646NLWFT1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): 30;
NTMFS5C646NLT3G
NTMFS5C646NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 93A ID, and 0.0063 ohm RDS(ON). It operates in Enhancement Mode with 750A IDM and 185mJ EAS. Ideal for power management applications due to its high power dissipation of 79W and small outline package style.
185 mJ
.0063 ohm
R-PDSO-F5
5
750 A
FLAT
DUAL
IPB70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .0071 ohm; Transistor Element Material: SILICON;
ULTRA LOW RESISTANCE
.0071 ohm
245
IPD70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Feedback Capacitance (Crss): 130 pF; Maximum Pulsed Drain Current (IDM): 280 A;
IPB136N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 80 V;
50 mJ
80 V
45 A
.0136 ohm
180 A
NTD4805N-1G
NTD4805N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0074 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 79W Pdiss. The N-CHANNEL transistor has a SILICON element and operates at up to 175 °C.
12.6 A
NTD4805NT4G
NTD4805NT4G by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 175A, and max operating temperature of 175°C. This MOSFET has a low on-resistance of 0.0074 ohm and can handle a max drain current of 12.6A efficiently in small outline packages.
IPU135N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; JESD-30 Code: R-PSIP-T3; Maximum Drain Current (ID): 50 A;
40 mJ
.0135 ohm
TO-251
FDD8445-F085
FDD8445-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 79W.
144 mJ
.0087 ohm
270 pF
TO-252AA
53 ns
138 ns
NVMFS4C05NT3G
NVMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 116A ID and 79W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in demanding environments. With surface mount configuration and matte tin finish, it offers reliable performance in various power systems.
116 A
NVMFS4C05NWFT3G
NVMFS4C05NWFT3G by Onsemi is a single N-channel Power FET with 116A max drain current and 79W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
IPP084N06L3GXKSA1
Infineon Technologies' IPP084N06L3GXKSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 0.0084 ohm RDS(on), and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 79W.
TO-220AB
R-PSFM-T3
FLANGE MOUNT
NVMFS5C645NLT1G
NVMFS5C645NLT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
.0057 ohm
17 pF
820 A
NVMFS5C645NLT3G
NVMFS5C645NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in high-power systems with its 185mJ EAS rating.
NVMFS5C645NLWFT1G
NVMFS5C645NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C645NLWFT3G
NVMFS5C645NLWFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C645NWFT1G
NVMFS5C645NWFT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0046 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
92 A
.0046 ohm
13 pF
NVTFS007N08HLTAG
NVTFS007N08HLTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 347A IDM, and 0.007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
1433 mJ
71 A
.007 ohm
14.1 pF
S-PDSO-F8
8
SQUARE
347 A
NVTFWS007N08HLTAG
NVTFWS007N08HLTAG by Onsemi is a Power FET with 80V DS Breakdown Voltage, 347A IDM, and 1433mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as automotive systems or industrial equipment.
DMTH10H025LPS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
96 mJ
.023 ohm
20 pF
R-PDSO-F8
MIL-STD-202
Matte Tin (Sn)
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