Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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RDX045N60FU6
ROHM
ROHM's RDX045N60FU6 is a single N-channel power FET with 4.5A max drain current and 35W max power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and reliability at up to 150°C operating temperature.
SINGLE
4.5 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
35 W
FET General Purpose Power
NO
AOTF4N60
Alpha & Omega Semiconductor
AOTF4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 35W power dissipation. It operates in enhancement mode with a max temperature of 150°C. Ideal for power applications requiring high efficiency and performance.
4 A
AOTF5N50
AOTF5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 18A IDM and 203mJ EAS, suitable for power applications requiring high drain current and energy ratings. Ideal for use in circuits where low on-resistance and fast switching times are critical.
203 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
5 A
1.5 ohm
5.9 pF
TO-220AB
R-PSFM-T3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
18 A
THROUGH-HOLE
SILICON
70.4 ns
52.4 ns
2SK4099LS-1E
Onsemi
The Onsemi 2SK4099LS-1E is an N-channel Power FET with a max drain current of 8.5A and power dissipation of 35W. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies or motor control systems at up to 150°C.
8.5 A
e3
TIN
AOTF5N50FD
AOTF5N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 5A ID and 35W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems operating at temperatures up to 150°C.
NDF06N60ZH
NDF06N60ZH by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for applications requiring high power dissipation in enhancement mode operation. Suitable for use in circuits where low drain-source resistance and high current handling are essential.
113 mJ
600 V
7.1 A
1.2 ohm
28 A
Not Qualified
STF11N65K3
STMicroelectronics
STF11N65K3 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.85 ohm max drain-source resistance. This MOSFET operates in enhancement mode and has a max power dissipation of 35W, making it suitable for high-power applications.
212 mJ
650 V
11 A
.85 ohm
40 A
MATTE TIN
SWITCHING
NDF08N50ZH
NDF08N50ZH by Onsemi is a N-CHANNEL FET with 8.5A max drain current and 35W power dissipation. Ideal for power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor tech and tin terminal finish.
FET General Purpose Powers
STF130N10F3
STF130N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 184A IDM, and 0.0096 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
ULTRA LOW RESISTANCE
125 mJ
100 V
46 A
.0096 ohm
175 Cel
184 A
STFI26NM60N
STFI26NM60N by STMicroelectronics is a N-CHANNEL FET with 20A ID and 35W power dissipation. Ideal for high-power applications, it operates up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
20 A
STF15N80K5
STF15N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 56A pulsed drain current and 0.375 ohm max on-resistance. The transistor operates in enhancement mode, with a max power dissipation of 35W at 150°C.
800 V
14 A
.375 ohm
56 A
STF34N65M5
STF34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 112A IDM, and 0.11 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE at up to 150 °C.
510 mJ
.11 ohm
6.3 pF
112 A
STF32NM50N
STF32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The transistor has a single configuration with built-in diode and comes in a PLASTIC/EPOXY package.
340 mJ
22 A
.13 ohm
88 A
STU10P6F6
STU10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.116 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
80 mJ
DRAIN
60 V
10 A
.116 ohm
TO-251
R-PSIP-T3
IN-LINE
P-CHANNEL
STF26NM60ND
STF26NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 84A IDM, 100mJ EAS, and 0.175 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150°C.
100 mJ
21 A
.175 ohm
84 A
BBL4001-1E
BBL4001-1E by Onsemi is a N-channel Power FET with 60V DS breakdown voltage and 296A IDM. Ideal for applications requiring high power dissipation up to 35W, such as power management systems. Features include single configuration, rectangular package shape, and enhanced mode operation.
370 mJ
74 A
.0098 ohm
540 pF
2 W
296 A
STP20NM50FP
STP20NM50FP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150 °C.
650 mJ
.25 ohm
80 A
STF150N10F7
STF150N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 260A IDM, and 0.0042 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175 °C.
495 mJ
65 A
.0042 ohm
67 pF
260 A
STD40N2LH5
STD40N2LH5 by STMicroelectronics is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0155 ohm RDS(on), and 35W Pdiss in a PLASTIC/EPOXY package.
110 mJ
25 V
.0155 ohm
TO-252
R-PSSO-G2
2
SMALL OUTLINE
260
160 A
YES
GULL WING
30
STF23NM60N
STF23NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
700 mJ
19 A
.18 ohm
76 A
STF23NM60ND
STF23NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 78A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
19.5 A
78 A
STF19NM65N
STF19NM65N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 15.5A max drain current. It operates in enhancement mode with a low on-resistance of 0.27Ω. Ideal for high-efficiency power management solutions.
400 mJ
15.5 A
.27 ohm
62 A
NDF06N60ZG
NDF06N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in industrial equipment, power supplies, and motor control systems due to its robust design and performance.
STP11NM60FP
STP11NM60FP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A Max Pulsed Drain Current and 350mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with 0.45 ohm On Resistance, suitable for high-power circuits.
350 mJ
.45 ohm
44 A
STP11NM60FDFP
STP11NM60FDFP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM, 350mJ EAS, and 0.45 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 35W at 150°C.
AVALANCHE RATED
STF32N65M5
STF32N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and a max drain current of 24A. It offers low on-resistance of 0.119Ω and operates at up to 150 °C. This versatile FET is suitable for high-efficiency power management.
AVALANCHE ENERGY RATED
24 A
.119 ohm
96 A
STF7N95K3
STF7N95K3 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, 28.8A IDM, and 220mJ EAS. Ideal for SWITCHING applications due to its 35W Max Power Dissipation and ENHANCEMENT MODE operation at up to 150°C.
220 mJ
950 V
7.2 A
1.35 ohm
28.8 A
STF8NK85Z
STF8NK85Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.7 A and a breakdown voltage of 850 V. It operates in enhancement mode with a power dissipation of 35 W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
850 V
6.7 A
1.4 ohm
26.7 A
IRLR024ZPBF
International Rectifier
IRLR024ZPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 64A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.058 ohm RDS(on), and 175°C max operating temp. Perfect for high-power switching circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
25 mJ
55 V
16 A
.058 ohm
TO-252AA
64 A
Matte Tin (Sn) - with Nickel (Ni) barrier
STF9NK80Z
STF9NK80Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain-source voltage of 800V, a pulsed drain current of 30A, and operates at up to 150 °C. Ideal for power management in various electronic devices.
7.5 A
30 A
STD35N3LH5
STD35N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 35 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in electronics.
30 V
35 A
.02 ohm
140 A
Matte Tin (Sn) - annealed
STF10N65K3
STF10N65K3 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 212mJ avalanche energy rating. The transistor operates in enhancement mode with 0.85 ohm max drain-source resistance, suitable for high-power applications up to 35W dissipation.
AOTF7S65
AOTF7S65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 7A max drain current and 35W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its single configuration makes it suitable for various power management systems.
7 A
STFI13N80K5
STFI13N80K5 from STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 12 A and power dissipation of 35 W, operating up to 150 °C. This FET is perfect for efficient switching in various electronic circuits.
12 A
FCPF165N65S3L1
FCPF165N65S3L1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 47.5A and EAS of 87mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.165 ohm RDS(on) and can handle up to 35W power dissipation at temperatures ranging from -55 to 150 °C.
87 mJ
.165 ohm
47.5 A
FDPF8D5N10C
FDPF8D5N10C by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 304A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 35W, this transistor has an operating temperature range of -55 to 175 °C.
181 mJ
.0085 ohm
25 pF
2.4 W
304 A
38 ns
42 ns
TK7A80W,S4X
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
310 mJ
6.5 A
.95 ohm
1.2 pF
26 A
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