Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVB6412ANT4G
Onsemi
NVB6412ANT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
300 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
58 A
.0182 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
167 W
240 A
AEC-Q101
FET General Purpose Power
YES
TIN
GULL WING
SINGLE
30
SILICON
IPB022N04LGATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Position: SINGLE; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE
150 mJ
40 V
90 A
.0029 ohm
TO-263AB
NOT SPECIFIED
400 A
Not Qualified
SWITCHING
NVMFS5C410NLT1G
NVMFS5C410NLT1G by Onsemi is a N-CHANNEL FET with 315A ID and 167W power dissipation. Ideal for high-power applications, it operates up to 175 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount designs, it features matte tin finish and peak reflow temp of 260°C.
315 A
Matte Tin (Sn) - annealed
NVMFS5C410NLT3G
NVMFS5C410NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0013 ohm RDS(on). It is used in automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature.
706 mJ
.0013 ohm
R-PDSO-F5
5
900 A
FLAT
DUAL
NVMFS5C410NLWFT1G
NVMFS5C410NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
330 A
.0012 ohm
116 pF
-55 Cel
NTMFS5C404NLT3G
NTMFS5C404NLT3G by Onsemi is a single N-channel power FET with a max drain current of 339A and power dissipation of 167W. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, ideal for high-power applications requiring efficient switching and control.
339 A
150 Cel
NVMFS5C612NLT3G
NVMFS5C612NLT3G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.
235 A
NVMFS5C612NLWFT1G
NVMFS5C612NLWFT1G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, ideal for high-power applications requiring efficient switching capabilities.
NVMFS5C612NLWFT3G
NVMFS5C612NLWFT3G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology.
IPP08CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Additional Features: LOGIC LEVEL COMPATIBLE;
254 mJ
98 A
.008 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
392 A
NO
MATTE TIN
THROUGH-HOLE
IRL1104SPBF
International Rectifier
IRL1104SPBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 104A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 0.008 ohm RDS(on), and 175°C max operating temp. Perfect for high-power circuit designs requiring efficient switching capabilities in compact spaces.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
340 mJ
104 A
416 A
Matte Tin (Sn) - with Nickel (Ni) barrier
NTB5404NT4G
NTB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 258A IDM, and 0.0045 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages with 175 °C max operating temp.
1000 mJ
136 A
.0045 ohm
258 A
NTB6412ANT4G
NTB6412ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). It is used in applications requiring high power dissipation up to 167W, such as power supplies and motor control systems.
NTP6412ANG
NTP6412ANG by Onsemi is a single N-channel Power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 240A. Ideal for applications requiring high power dissipation, such as in automotive or industrial settings.
IPB08CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain-Source On Resistance: .0082 ohm;
262 mJ
95 A
.0082 ohm
245
380 A
IPB08CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Avalanche Energy Rating (EAS): 262 mJ; Maximum Drain Current (Abs) (ID): 95 A;
85 V
IPP08CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Minimum DS Breakdown Voltage: 100 V; JEDEC-95 Code: TO-220AB;
.0085 ohm
IPP08CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; JESD-609 Code: e3; No. of Terminals: 3;
IPI037N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
165 mJ
60 V
.0037 ohm
TO-262AA
R-PSIP-T3
IN-LINE
360 A
NTMFS5C410NLTT3G
NTMFS5C410NLTT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for high-power applications requiring fast switching and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high current handling capabilities.
NTMFS5C410NLTWFT1G
NTMFS5C410NLTWFT1G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). It is used in applications requiring high power dissipation, such as automotive systems and industrial equipment.
NTMFS5C410NLTWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Form: FLAT; Package Style (Meter): SMALL OUTLINE;
NTMFS5C609NLT1G
NTMFS5C609NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive electronics due to its high current handling capability and low on-resistance.
451 mJ
250 A
.0023 ohm
NVMFS5C410NLWFAFT1G
NVMFS5C410NLWFAFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NTMJS1D6N06CLTWG
NTMJS1D6N06CLTWG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at temperatures ranging from -55 to 175 °C.
R-PSSO-G4
4
NTMJS0D9N04CLTWG
NTMJS0D9N04CLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A max pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in a small outline package. Operating temperature range from -55 to 175 °C makes it suitable for various industrial uses.
77 pF
R-PDSO-X5
UNSPECIFIED
DMTH6002LPSW-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 820 A;
662 mJ
205 A
.0033 ohm
179 pF
R-PDSO-F8
8
820 A
MIL-STD-202
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