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36 W Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BD438TG by Onsemi

BD438TG

Onsemi

The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.

4 A

SINGLE

85

e3

1

150 Cel

-55 Cel

PNP

36 W

Other Transistors

NO

MATTE TIN

3 MHz

D44H11FP by STMicroelectronics

D44H11FP

STMicroelectronics

D44H11FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 36W, a collector-emitter voltage of 80V, and operates at up to 150 °C. Ideal for high-performance electronic circuits requiring reliable control.

ISOLATED

8 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD437T by Onsemi

BD437T

Onsemi

The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

4 A

45 V

SINGLE

40

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

36 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

ST13007DFP by STMicroelectronics

ST13007DFP

STMicroelectronics

ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.

ISOLATED

8 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD436T by Onsemi

BD436T

Onsemi

The Onsemi BD436T is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min hFE of 50 and fT of 3MHz, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

4 A

32 V

SINGLE

50

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

36 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BUL1203EFP by STMicroelectronics

BUL1203EFP

STMicroelectronics

BUL1203EFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 550 V, a power dissipation of 36 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

5 A

550 V

SINGLE

9

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD436TG by Onsemi

BD436TG

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 4 A;

4 A

32 V

SINGLE

50

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD435G by Onsemi

BD435G

Onsemi

The Onsemi BD435G is a NPN Power BJT with 36W power dissipation, ideal for switching applications. Featuring a max collector-emitter voltage of 32V and max collector current of 4A, it operates up to 150°C. With a min hFE of 50 and fT of 3MHz, this transistor is suitable for various electronic circuits.

4 A

32 V

SINGLE

50

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD438G by Onsemi

BD438G

Onsemi

The Onsemi BD438G is a PNP BJT transistor with 3 terminals, capable of handling up to 4A collector current and 36W power dissipation. It operates b/w -55°C to 150°C, making it suitable for switching applications due to its high transition frequency of 3MHz.

4 A

45 V

SINGLE

40

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD440G by Onsemi

BD440G

Onsemi

BD440G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. The through-hole package with flange mount suits various electronic designs.

4 A

60 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

ST8812FP by STMicroelectronics

ST8812FP

STMicroelectronics

ST8812FP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 36W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-power circuits with through-hole mounting.

ISOLATED

7 A

600 V

SINGLE

4.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON