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2.5 W Power Bipolar Junction Transistors (BJT) 10

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSW42RLRAG by Onsemi

MPSW42RLRAG

Onsemi

MPSW42RLRAG by Onsemi is a NPN BJT with max VCEsat of 0.5V, hFE of 40, and max IC of 0.5A. Ideal for power applications in temperatures ranging from -55 to 150 °C, it features a collector-emitter voltage of 300V. Its through-hole package makes it suitable for various cylindrical power designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

MPS6717G by Onsemi

MPS6717G

Onsemi

MPS6717G by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications, it operates b/w -55 to 150 °C with a max VCE of 80V. The package is cylindrical with through-hole terminals and can dissipate up to 2.5W power.

.5 A

30 pF

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

.5 V

MPS6717RLRAG by Onsemi

MPS6717RLRAG

Onsemi

MPS6717RLRAG by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its high power dissipation (2.5W) and collector-emitter voltage of 80V. Its package style is cylindrical with through-hole terminals for easy mounting in various electronic circuits.

.5 A

30 pF

80 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

.5 V

MPSW42G by Onsemi

MPSW42G

Onsemi

MPSW42G by Onsemi is a NPN BJT with 300V VCE, 0.5A IC, and 40 hFE. It is used in power applications due to its 2.5W Pdiss and -55 °C to 150°C operating temp range. The transistor's through-hole package makes it suitable for various cylindrical style designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

MPSW55G by Onsemi

MPSW55G

Onsemi

The Onsemi MPSW55G is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and max IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 60V. With a package style of cylindrical, it can dissipate up to 2.5W power in ambient temperatures up to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSW55RLRAG by Onsemi

MPSW55RLRAG

Onsemi

MPSW55RLRAG by Onsemi is a PNP BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications. It has a min hFE of 50 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and terminal finish of Tin Silver Copper, it operates b/w -55 to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

BCP5616TQTA by Diodes Incorporated

BCP5616TQTA

Diodes Incorporated

BCP5616TQTA by Diodes Inc. is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at temperatures from -55 to 150°C. This small outline package with Gull Wing terminals is ideal for high-speed switching in automotive and industrial electronics.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTC by Diodes Incorporated

BCP5616TQTC

Diodes Incorporated

Diodes Inc. BCP5616TQTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline SMT designs in automotive and industrial electronics with operating temp range -55 to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TTC by Diodes Incorporated

BCP5616TTC

Diodes Incorporated

Diodes Inc. BCP5616TTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount configurations with a max operating temp of 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TTA by Diodes Incorporated

BCP5616TTA

Diodes Incorporated

Diodes Inc. BCP5616TTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount designs with operating temperatures up to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V