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2 W Power Bipolar Junction Transistors (BJT) 22

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCP5316TA by Diodes Incorporated

BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5416QTA by Diodes Incorporated

BCP5416QTA

Diodes Incorporated

Diodes Inc. BCP5416QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 and IATF 16949 standards.

COLLECTOR

1 A

25 pF

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5610E6327HTSA1 by Infineon Technologies

BCP5610E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5616E6327HTSA1 by Infineon Technologies

BCP5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCX5216E6327HTSA1 by Infineon Technologies

BCX5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH: 1000

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

125 MHz

.5 V

BCP53QTA by Diodes Incorporated

BCP53QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5316QTA by Diodes Incorporated

BCP5316QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

2SD2211T100/Q by ROHM

2SD2211T100/Q

ROHM

ROHM 2SD2211T100/Q is a NPN BJT with VCEsat of 2V, hFE of 120, and IC of 1.5A. Ideal for power applications in small outline packages due to its high transition frequency of 80MHz and low collector-base capacitance of 20pF. Suitable for surface mount designs requiring compact solutions with a max operating temperature of 150°C.

COLLECTOR

1.5 A

20 pF

160 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SILICON

80 MHz

2 V

TIP122FP by STMicroelectronics

TIP122FP

STMicroelectronics

TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.

ISOLATED

5 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DCP69-16-13 by Diodes Incorporated

DCP69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

DCP69-25-13 by Diodes Incorporated

DCP69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

BCX53H6327XTSA1 by Infineon Technologies

BCX53H6327XTSA1

Infineon Technologies

BCX53H6327XTSA1 by Infineon Technologies is a PNP BJT transistor with 80V VCEO, 1A IC, and 2W power dissipation. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. This surface-mount transistor in a small outline package is AEC-Q101 compliant.

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

125 MHz

2N6667G by Onsemi

2N6667G

Onsemi

2N6667G by Onsemi is a PNP BJT with 10A IC, 60V VCE, and 2W power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Operates up to 150 °C with hFE of at least 100, making it suitable for high-power tasks.

COLLECTOR

10 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

2 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MJE13009G by Onsemi

MJE13009G

Onsemi

MJE13009G by Onsemi is a NPN BJT transistor with 400V VCEO, 12A IC, and 2W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 6. Packaged in plastic/epoxy with flange mount style, it operates up to 150 °C making it suitable for various industrial uses.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

12 A

400 V

SINGLE

6

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

2 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

STS05DTP03 by STMicroelectronics

STS05DTP03

STMicroelectronics

STS05DTP03 from STMicroelectronics is a versatile NPN/PNP BJT designed for switching applications. It features a max power dissipation of 2W, supports up to 5A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

5 A

30 V

SEPARATE, 2 ELEMENTS

80

R-PDSO-G8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS01DTP06 by STMicroelectronics

STS01DTP06

STMicroelectronics

STS01DTP06 by STMicroelectronics is a Power BJT with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max power dissipation of 2W and max collector current of 3A. The transistor operates up to 150°C, features dual terminals with Gull Wing form, and can withstand peak reflow at 260°C for up to 40s.

3 A

30 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G8

e4

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

40

SWITCHING

SILICON

BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5516H6327XTSA1 by Infineon Technologies

BCP5516H6327XTSA1

Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

TR, 7 INCH; 1000

COLLECTOR

1 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCX5316H6327XTSA1 by Infineon Technologies

BCX5316H6327XTSA1

Infineon Technologies

Infineon's BCX5316H6327XTSA1 is a PNP BJT with 2W power dissipation, hFE of 100, and IC of 1A. Ideal for surface mount applications, it operates up to 150°C making it suitable for power management in various electronic devices.

1 A

SINGLE

100

e3

1

1

150 Cel

245

PNP

2 W

Other Transistors

YES

TIN

BCP5610QTA by Diodes Incorporated

BCP5610QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5610QTC by Diodes Incorporated

BCP5610QTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

ZXTP19040CGQ-7 by Diodes Incorporated

ZXTP19040CGQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

40 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V