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25 A Power Bipolar Junction Transistors (BJT) 12

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SGSD100 by STMicroelectronics

SGSD100

STMicroelectronics

STMicroelectronics SGSD100 is a NPN BJT with Darlington configuration, built-in diode and resistor. Ideal for switching applications with max VCEsat of 3.5V, hFE of 300, and IC of 25A. Operates up to 150 °C, with max power dissipation of 130W in a rectangular package suitable for flange mount.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

130 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3.5 V

SGSD200 by STMicroelectronics

SGSD200

STMicroelectronics

SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3.5 V

2STC2510 by STMicroelectronics

2STC2510

STMicroelectronics

2STC2510 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

2STA2510 by STMicroelectronics

2STA2510

STMicroelectronics

2STA2510 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

25 A

100 V

SINGLE

40

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

20 MHz

TIP35CP by STMicroelectronics

TIP35CP

STMicroelectronics

TIP35CP by STMicroelectronics is a NPN Power BJT with 125W power dissipation, 100V max. collector-emitter voltage, and 25A max. collector current. It is used in applications requiring high-power amplification or switching such as audio amplifiers and power supplies due to its robust design and high operating temperature of 150°C.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

TIP36CP by STMicroelectronics

TIP36CP

STMicroelectronics

TIP36CP by STMicroelectronics is a PNP BJT with 125W power dissipation, 100V max collector-emitter voltage, and 25A max collector current. Ideal for high-power applications requiring a single configuration transistor in a rectangular package with through-hole terminals.

25 A

100 V

SINGLE

10

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

3 MHz

2N5885G by Onsemi

2N5885G

Onsemi

The Onsemi 2N5885G is a NPN BJT transistor with max. power dissipation of 200W, max. collector current of 25A, and max. collector-emitter voltage of 60V. It is used for switching applications due to its single configuration and high transition frequency of 4MHz in a round package style.

COLLECTOR

25 A

60 V

SINGLE

4

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

2N5883G by Onsemi

2N5883G

Onsemi

Onsemi's 2N5883G is a PNP BJT with max. collector current of 25A and power dissipation of 200W. Ideal for switching applications, it operates at up to 200°C with a max. VCE of 60V. The transistor features a single configuration in round package style, making it suitable for high-power electronic systems.

COLLECTOR

25 A

60 V

SINGLE

4

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

2N6338G by Onsemi

2N6338G

Onsemi

The Onsemi 2N6338G is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 25A, and max. power dissipation of 200W. Ideal for switching applications due to its single configuration and high transition frequency of 40MHz in a round package shape.

COLLECTOR

25 A

100 V

SINGLE

12

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

40 MHz

TIP35AG by Onsemi

TIP35AG

Onsemi

TIP35AG by Onsemi is a NPN Power BJT with 125W power dissipation, 60V max collector-emitter voltage, and 25A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min DC current gain of 15 and nominal transition frequency of 3MHz.

COLLECTOR

25 A

60 V

SINGLE

15

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

2STW100 by STMicroelectronics

2STW100

STMicroelectronics

2STW100 by STMicroelectronics is a powerful NPN Darlington transistor designed for switching applications. It features a max power dissipation of 130 W, a collector current of 25 A, and operates up to 150 °C. Ideal for high-efficiency circuits with robust performance.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

130 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STW200 by STMicroelectronics

2STW200

STMicroelectronics

2STW200 by STMicroelectronics is a PNP Darlington BJT designed for switching applications. It features a max power dissipation of 130 W, a min DC current gain (hFE) of 300, and operates up to 150 °C. Ideal for high-power circuits with an 80 V collector-emitter voltage.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON