Loading...

IXYS Corporation Insulated Gate Bipolar Transistors (IGBT) 27

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXGM40N60A by IXYS Corporation

IXGM40N60A

IXYS Corporation

IXYS Corporation's IXGM40N60A is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 3V VCEsat. Ideal for POWER CONTROL applications, it has a single configuration, 900ns toff, and 300ns ton. The METAL package with PIN/PEG terminals can handle up to 250W power dissipation at 150°C ambient temperature.

HIGH SPEED

COLLECTOR

75 A

600 V

SINGLE

5 V

20 V

TO-204AE

O-MBFM-P2

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

POWER CONTROL

SILICON

900 ns

300 ns

3 V

IXSK35N120AU1 by IXYS Corporation

IXSK35N120AU1

IXYS Corporation

IXYS Corporation's IXSK35N120AU1 is an N-CHANNEL IGBT with 1200V VCE, 70A IC, and 4V VCEsat. Ideal for MOTOR CONTROL applications, it has a built-in diode, 1100ns toff, and can handle up to 300W power dissipation.

HIGH SPEED

COLLECTOR

70 A

1200 V

SINGLE WITH BUILT-IN DIODE

8 V

20 V

TO-264

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1100 ns

230 ns

4 V

IXSH45N120 by IXYS Corporation

IXSH45N120

IXYS Corporation

IXYS Corporation's IXSH45N120 is an N-CHANNEL IGBT transistor with 1200V VCE, 75A IC, and 3V VCEsat. Ideal for MOTOR CONTROL applications, it has a toff of 1650ns and ton of 330ns, housed in a PLASTIC/EPOXY package with FLANGE MOUNT style.

COLLECTOR

75 A

1200 V

SINGLE

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1650 ns

330 ns

3 V

IXSN55N120A by IXYS Corporation

IXSN55N120A

IXYS Corporation

IXYS Corporation's IXSN55N120A is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 140ns ton. Ideal for POWER CONTROL applications, it has a SINGLE configuration in a FLANGE MOUNT package with 4 terminals.

ISOLATED

80 A

1200 V

SINGLE

R-XUFM-X4

1

4

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

600 ns

140 ns

IXSH24N60A by IXYS Corporation

IXSH24N60A

IXYS Corporation

IXYS Corporation's IXSH24N60A is an N-CHANNEL IGBT with 600V VCE, 48A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a max power dissipation of 150W and operates at up to 150°C. With fast switching times (ton:300ns, toff:925ns), it offers efficient performance in various power control systems.

HIGH SPEED

COLLECTOR

48 A

600 V

SINGLE

500 ns

6.5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

925 ns

300 ns

2.7 V

IXSH24N60AU1 by IXYS Corporation

IXSH24N60AU1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 48 A; No. of Terminals: 3;

FAST

COLLECTOR

48 A

600 V

SINGLE WITH BUILT-IN DIODE

500 ns

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

925 ns

300 ns

2.7 V

IXSH45N100 by IXYS Corporation

IXSH45N100

IXYS Corporation

IXYS Corporation's IXSH45N100 is an N-CHANNEL IGBT with 1000V VCEsat, 75A IC, and 300W power dissipation. Ideal for POWER CONTROL applications, it has a turn-off time of 2750ns and operates up to 150°C.

COLLECTOR

75 A

1000 V

SINGLE

1500 ns

7 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2750 ns

400 ns

2.7 V

IXGN50N60BD2 by IXYS Corporation

IXGN50N60BD2

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;

FAST

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

200 ns

50 ns

2.5 V

IXGH32N60AU1 by IXYS Corporation

IXGH32N60AU1

IXYS Corporation

IXGH32N60AU1 by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 2.9V, IC of 60A, and toff of 400ns. Ideal for MOTOR CONTROL applications due to its high power dissipation of 200W and max voltage of 600V. Features single configuration with built-in diode in a RECTANGULAR package.

FAST

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

175 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

400 ns

60 ns

2.9 V

IXGH39N60B by IXYS Corporation

IXGH39N60B

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 76 A; Nominal Turn On Time (ton): 55 ns;

FAST

COLLECTOR

76 A

600 V

SINGLE

360 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

710 ns

55 ns

IXGH50N60A by IXYS Corporation

IXGH50N60A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Transistor Application: MOTOR CONTROL;

FAST

COLLECTOR

75 A

600 V

SINGLE

200 ns

5 V

20 V

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

880 ns

290 ns

2.7 V

IXGN60N60 by IXYS Corporation

IXGN60N60

IXYS Corporation

IXYS Corporation's IXGN60N60 is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 250W Pd. Ideal for POWER CONTROL applications, it features a toff of 650ns, tf of 700ns, and ton of 50ns. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures efficient heat dissipation up to 150°C.

FAST

ISOLATED

100 A

600 V

SINGLE

700 ns

5 V

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

650 ns

50 ns

IXGH30N60BD1 by IXYS Corporation

IXGH30N60BD1

IXYS Corporation

IXGH30N60BD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications due to its fast turn-off time of 200ns and built-in diode in a rectangular package.

FAST

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

190 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

200 ns

25 ns

IXGH31N60 by IXYS Corporation

IXGH31N60

IXYS Corporation

IXGH31N60 by IXYS Corp is an N-CHANNEL IGBT transistor with VCEsat of 1.8V and IC of 60A. Ideal for POWER CONTROL applications, it has a toff of 1600ns, tf of 1100ns, and can handle up to 150W power dissipation.

COLLECTOR

60 A

600 V

SINGLE

1100 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

1600 ns

40 ns

1.8 V

IXGR32N60CD1 by IXYS Corporation

IXGR32N60CD1

IXYS Corporation

IXGR32N60CD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 45A max collector current, and 140W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 210ns.

FAST

ISOLATED

45 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

50 ns

MWI100-12E8 by IXYS Corporation

MWI100-12E8

IXYS Corporation

IXYS Corporation's MWI100-12E8 is an N-CHANNEL IGBT bridge with 6 elements and built-in diode, ideal for power control applications. It features a max VCEsat of 2.5V, can handle up to 165A collector current, and has a max operating temperature of 150°C. This UL RECOGNIZED device offers fast turn-off time (795ns) and high power dissipation (640W), making it suitable for demanding industrial environments.

ISOLATED

165 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X11

e3

6

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

640 W

Not Qualified

UL RECOGNIZED

Insulated Gate BIP Transistors

NO

TIN OVER NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

795 ns

345 ns

2.5 V

IXGR40N60C2D1 by IXYS Corporation

IXGR40N60C2D1

IXYS Corporation

IXGR40N60C2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 56A max collector current, and 210ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material.

ISOLATED

56 A

600 V

SINGLE WITH BUILT-IN DIODE

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

38 ns

IXGH40N60B2D1 by IXYS Corporation

IXGH40N60B2D1

IXYS Corporation

IXGH40N60B2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 75A max collector current, and 38ns turn on time. Ideal for power control applications due to its single configuration with built-in diode and plastic/epoxy package body material.

COLLECTOR

75 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

38 ns

IXGH40N60B2 by IXYS Corporation

IXGH40N60B2

IXYS Corporation

IXGH40N60B2 by IXYS Corp is an N-CHANNEL IGBT with 600V VCE, 75A IC, and 38ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with FLANGE MOUNT style ensures reliable performance in various environments.

COLLECTOR

75 A

600 V

SINGLE

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

38 ns

IXGN60N60C2D1 by IXYS Corporation

IXGN60N60C2D1

IXYS Corporation

IXYS Corporation's IXGN60N60C2D1 is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 75A, and Pmax of 480W. Ideal for power control applications due to its fast turn-off time (toff) of 210ns and high operating temperature up to 150°C. The device features a built-in diode, UL recognized, and is flange mountable for efficient heat dissipation.

LOW CONDUCTION LOSS

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

480 W

Not Qualified

UL RECOGNIZED

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

210 ns

43 ns

2.5 V

IXGR32N170AH1 by IXYS Corporation

IXGR32N170AH1

IXYS Corporation

IXGR32N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V VCE, 26A IC, and 107ns ton. Ideal for power control applications, it features a built-in diode, isolated case connection, and UL recognition.

ISOLATED

26 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

UL RECOGNIZED

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

370 ns

107 ns

IXGT16N170AH1 by IXYS Corporation

IXGT16N170AH1

IXYS Corporation

IXGT16N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 16A max collector current, and 190W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 330ns and built-in diode configuration.

COLLECTOR

16 A

1700 V

SINGLE WITH BUILT-IN DIODE

150 ns

5 V

20 V

TO-268AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

190 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

10

MOTOR CONTROL

SILICON

330 ns

97 ns

IXGT25N250-T/R by IXYS Corporation

IXGT25N250-T/R

IXYS Corporation

Insulated Gate Bipolar Transistors;

IXGA20N120A3-TRL by IXYS Corporation

IXGA20N120A3-TRL

IXYS Corporation

IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.

LOW CONDUCTION LOSS

COLLECTOR

40 A

1200 V

SINGLE

5 V

20 V

TO-263AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

180 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1530 ns

66 ns

2.5 V

IXGA30N120B3-TRL by IXYS Corporation

IXGA30N120B3-TRL

IXYS Corporation

IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.

LOW CONDUCTION LOSS

COLLECTOR

60 A

1200 V

SINGLE

380 ns

5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

300 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

580 ns

331 ns

53 ns

3.5 V

IXGT6N170AHV-TRL by IXYS Corporation

IXGT6N170AHV-TRL

IXYS Corporation

IXGT6N170AHV-TRL by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 7V, IC of 6A, and Pmax of 75W. Ideal for POWER CONTROL applications, it operates b/w -55 to 150 °C and features a fast turn-off time of 271ns.

COLLECTOR

6 A

1700 V

SINGLE

5 V

20 V

TO-268AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

75 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

271 ns

91 ns

7 V

IXYY8N90C3-TRL by IXYS Corporation

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

20 A

900 V

SINGLE

6 V

20 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

238 ns

39 ns

3 V