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200 W Insulated Gate Bipolar Transistors (IGBT) 17

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP35HF60W by STMicroelectronics

STGP35HF60W

STMicroelectronics

STMicroelectronics' STGP35HF60W is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W power dissipation. It operates up to 150°C and has a gate-emitter threshold voltage of 5.75V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.

60 A

600 V

5.75 V

20 V

e3

150 Cel

N-CHANNEL

200 W

Insulated Gate BIP Transistors

NO

MATTE TIN

IXGH32N60AU1 by IXYS Corporation

IXGH32N60AU1

IXYS Corporation

IXGH32N60AU1 by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 2.9V, IC of 60A, and toff of 400ns. Ideal for MOTOR CONTROL applications due to its high power dissipation of 200W and max voltage of 600V. Features single configuration with built-in diode in a RECTANGULAR package.

FAST

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

175 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

400 ns

60 ns

2.9 V

IXGH39N60B by IXYS Corporation

IXGH39N60B

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 76 A; Nominal Turn On Time (ton): 55 ns;

FAST

COLLECTOR

76 A

600 V

SINGLE

360 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

710 ns

55 ns

IXGH30N60BD1 by IXYS Corporation

IXGH30N60BD1

IXYS Corporation

IXGH30N60BD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications due to its fast turn-off time of 200ns and built-in diode in a rectangular package.

FAST

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

190 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

200 ns

25 ns

STGW35HF60WDI by STMicroelectronics

STGW35HF60WDI

STMicroelectronics

STGW35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of just 295 ns, and can handle up to 200 W dissipation. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW35NB60S by STMicroelectronics

STGW35NB60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;

ISOLATED

70 A

600 V

SINGLE

5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

3600 ns

153 ns

STGW35HF60WD by STMicroelectronics

STGW35HF60WD

STMicroelectronics

STGW35HF60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and fast switching times (ton: 45 ns, toff: 295 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGB30NC60WT4 by STMicroelectronics

STGB30NC60WT4

STMicroelectronics

STGB30NC60WT4 from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 200W, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGB20NC60VT4 by STMicroelectronics

STGB20NC60VT4

STMicroelectronics

STGB20NC60VT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 200 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

280 ns

42.5 ns

STGB20NB37LZT4 by STMicroelectronics

STGB20NB37LZT4

STMicroelectronics

STGB20NB37LZT4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max power dissipation of 200W, a collector current of 40A, and operates at up to 175 °C. Its compact surface mount design ensures efficient thermal management.

COLLECTOR

40 A

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

15000 ns

2900 ns

STGW35HF60W by STMicroelectronics

STGW35HF60W

STMicroelectronics

STGW35HF60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGP30NC60W by STMicroelectronics

STGP30NC60W

STMicroelectronics

STGP30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 42.5 ns, toff: 189 ns). Its robust design supports high power dissipation up to 200 W at temperatures up to 150 °C.

60 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGW30NC60W by STMicroelectronics

STGW30NC60W

STMicroelectronics

STGW30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 200 W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGW35NB60SD by STMicroelectronics

STGW35NB60SD

STMicroelectronics

STGW35NB60SD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a turn-off time of just 3600 ns. This robust device operates efficiently up to 150 °C.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-247AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

153 ns

STGB20NC60V by STMicroelectronics

STGB20NC60V

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

200 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

42.5 ns

2.5 V

GT50J341,Q by Toshiba

GT50J341,Q

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 600 V;

50 A

600 V

SINGLE WITH BUILT-IN DIODE

350 ns

25 V

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

450 ns

270 ns

2.2 V

IKW15N120BH6XKSA1 by Infineon Technologies

IKW15N120BH6XKSA1

Infineon Technologies

IKW15N120BH6XKSA1 by Infineon is an N-Channel IGBT with VCEsat of 2.3V, toff of 373ns, and Pmax of 200W. Ideal for high-power applications like motor drives due to its VCE rating of 1200V and IC of 30A. Operating temp range from -40°C to +175°C makes it suitable for various industrial uses.

30 A

1200 V

6.3 V

20 V

e3

175 Cel

-40 Cel

N-Channel

200 W

TIN

SILICON

373 ns

46 ns

2.3 V