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120 A Insulated Gate Bipolar Transistors (IGBT) 26

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW60H65F by STMicroelectronics

STGW60H65F

STMicroelectronics

STGW60H65F by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It's used for POWER CONTROL applications due to its fast turn-off time of 265ns and high operating temperature of 150 °C. The transistor comes in a RECTANGULAR package with THROUGH-HOLE terminals.

120 A

650 V

SINGLE

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

265 ns

96 ns

STGW60H65DRF by STMicroelectronics

STGW60H65DRF

STMicroelectronics

STGW60H65DRF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It operates up to 150 °C making it ideal for high-power applications in industrial electronics and motor control systems.

120 A

650 V

20 V

e3

150 Cel

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

STGW60H65DF by STMicroelectronics

STGW60H65DF

STMicroelectronics

STGW60H65DF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It is used for power control applications due to its fast turn-off time of 247ns and turn-on time of 113ns. The transistor comes in a rectangular package with through-hole terminals and built-in diode.

120 A

650 V

SINGLE WITH BUILT-IN DIODE

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

113 ns

STGW80H65DFB by STMicroelectronics

STGW80H65DFB

STMicroelectronics

STGW80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 469W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters.

120 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW80V60DF by STMicroelectronics

STGW80V60DF

STMicroelectronics

STGW80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 600V collector-emitter voltage, and 120A collector current. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

120 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80H65DFB by STMicroelectronics

STGWT80H65DFB

STMicroelectronics

STGWT80H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 650V collector-emitter voltage, and 120A collector current. It operates up to 175 °C making it ideal for high-power applications in industries like automotive and renewable energy.

120 A

650 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80V60DF by STMicroelectronics

STGWT80V60DF

STMicroelectronics

STGWT80V60DF by STMicroelectronics is an N-CHANNEL IGBT with 469W power dissipation, 175 °C max temp, 600V collector-emitter voltage. Ideal for high-power applications like motor drives and inverters due to its 120A collector current capacity.

120 A

600 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGY80H65DFB by STMicroelectronics

STGY80H65DFB

STMicroelectronics

STMicroelectronics' STGY80H65DFB is an N-CHANNEL IGBT with 650V VCEsat, 120A IC, and 469W Pd. Ideal for POWER CONTROL applications due to its fast turn-off time of 358ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

358 ns

128 ns

2 V

STGFW80V60F by STMicroelectronics

STGFW80V60F

STMicroelectronics

STGFW80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Ptot of 79W. Ideal for POWER CONTROL applications due to its fast turn-off time (262ns) and high operating temperature range (-55 to 175 °C).

ISOLATED

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

79 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGW80V60F by STMicroelectronics

STGW80V60F

STMicroelectronics

STGW80V60F by STMicroelectronics is an N-CHANNEL IGBT transistor with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for power control applications due to its fast turn-off time (262ns) and high collector-emitter voltage (600V). Package style: FLANGE MOUNT.

120 A

600 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

STGWT80V60F by STMicroelectronics

STGWT80V60F

STMicroelectronics

STGWT80V60F by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 120A, and Pmax of 469W. Ideal for POWER CONTROL applications due to its fast ton of 90ns and toff of 262ns at a max VCE of 600V.

COLLECTOR

120 A

600 V

SINGLE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

262 ns

90 ns

2.3 V

NGTB60N60SWG by Onsemi

NGTB60N60SWG

Onsemi

NGTB60N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 298W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

120 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

298 W

Insulated Gate BIP Transistors

NO

TIN

FGH60N60SMD-F085 by Onsemi

FGH60N60SMD-F085

Onsemi

FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.

COLLECTOR

120 A

600 V

SINGLE WITH BUILT-IN DIODE

20 ns

6 V

20 V

TO-247AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

AEC-Q101

60 ns

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

139 ns

66 ns

FGH60T65SHD-F155 by Onsemi

FGH60T65SHD-F155

Onsemi

FGH60T65SHD-F155 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. It has a toff of 165ns, ton of 85ns, and can operate at temperatures ranging from -55°C to 175°C.

RC-IGBT

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

349 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

165 ns

85 ns

2.1 V

STGW80H65FB by STMicroelectronics

STGW80H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

120 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWA80H65DFB by STMicroelectronics

STGWA80H65DFB

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 470 W; Maximum Collector Current (IC): 120 A; Nominal Turn Off Time (toff): 358 ns;

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

470 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

358 ns

128 ns

2 V

STGWA80H65FB by STMicroelectronics

STGWA80H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Gate-Emitter Threshold Voltage: 7 V;

120 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT80H65FB by STMicroelectronics

STGWT80H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 469 W; Maximum Collector Current (IC): 120 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

120 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

469 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

FGH60N60SFDTU_F085 by Fairchild Semiconductor

FGH60N60SFDTU_F085

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Package Style (Meter): FLANGE MOUNT;

RC-IGBT

COLLECTOR

120 A

600 V

SINGLE

62 ns

6.6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

378 W

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

166 ns

76 ns

2.9 V

STGW80H65DFB-4 by STMicroelectronics

STGW80H65DFB-4

STMicroelectronics

STGW80H65DFB-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 120A. Ideal for POWER CONTROL applications, it has a max VCE of 650V and can handle up to 470W power dissipation. With fast ton of 104ns and toff of 448ns, this IGBT operates in temperatures ranging from -55°C to 175°C.

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

470 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

448 ns

104 ns

2 V

STGW75M65DF2 by STMicroelectronics

STGW75M65DF2

STMicroelectronics

STGW75M65DF2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

468 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

292 ns

73 ns

2.1 V

STGWA75M65DF2 by STMicroelectronics

STGWA75M65DF2

STMicroelectronics

STGWA75M65DF2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications requiring robust thermal management.

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

468 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

292 ns

73 ns

2.1 V

STGW80H65FB-4 by STMicroelectronics

STGW80H65FB-4

STMicroelectronics

STGW80H65FB-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 120A collector current, and operates in temperatures from -55 °C to 175 °C. Its robust design includes a built-in diode and Kelvin sensor for enhanced performance.

120 A

650 V

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

448 ns

104 ns

2 V

FGY60T120SQDN by Onsemi

FGY60T120SQDN

Onsemi

FGY60T120SQDN by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 120A IC, and 517W power dissipation. Ideal for general purpose switching applications due to its fast turn-off time of 468ns. The package style is flange mount with a rectangular shape and through-hole terminals.

HIGH SPEED SWITCHING

COLLECTOR

120 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

25 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

517 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

468 ns

112 ns

1.95 V

IXYH40N120C4 by Littelfuse

IXYH40N120C4

Littelfuse

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 680 W; Maximum Collector Current (IC): 120 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

COLLECTOR

120 A

1200 V

SINGLE

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

680 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

270 ns

63 ns

2.5 V

FGH60T65SQD-F155 by Onsemi

FGH60T65SQD-F155

Onsemi

FGH60T65SQD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175°C and collector-emitter voltage of 650V.

RC-IGBT

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AB

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

333 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

126.2 ns

36.8 ns

2.1 V