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SQUARE SRAM 114

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
71342LA45J8 by Integrated Device Technology

71342LA45J8

Integrated Device Technology

71342LA45J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J8 by Integrated Device Technology

71342LA55J8

Integrated Device Technology

71342LA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and offers parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF8 by Integrated Device Technology

71342LA55PF8

Integrated Device Technology

71342LA55PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package and operates in asynchronous mode with common I/O type. Ideal for applications requiring fast memory access such as networking equipment and industrial automation systems.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J8 by Integrated Device Technology

71342LA70J8

Integrated Device Technology

71342LA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a package style of CHIP CARRIER. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J8 by Integrated Device Technology

71342SA20J8

Integrated Device Technology

71342SA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. It features an asynchronous mode, 3-STATE output characteristics, and a max access time of 20ns. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF8 by Integrated Device Technology

71342SA20PF8

Integrated Device Technology

71342SA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers an access time of 20ns and features a low profile flatpack package suitable for commercial applications requiring fast parallel data processing.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J8 by Integrated Device Technology

71342SA25J8

Integrated Device Technology

71342SA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and offers asynchronous operation with common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF8 by Integrated Device Technology

71342SA25PF8

Integrated Device Technology

71342SA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J8 by Integrated Device Technology

71342SA35J8

Integrated Device Technology

71342SA35J8 by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 35ns access time and operates at a max supply voltage of 5.5V. It features a common I/O type, asynchronous operation mode, and offers 3-state output characteristics. Ideal for applications requiring fast memory access in commercial-grade temperature environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF8 by Integrated Device Technology

71342SA35PF8

Integrated Device Technology

71342SA35PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J8 by Integrated Device Technology

71342SA45J8

Integrated Device Technology

71342SA45J8 by Integrated Device Technology is a 4Kx8 SRAM chip with asynchronous operation and common I/O type. It operates at 5V, has a max access time of 45ns, and is ideal for applications requiring fast memory access such as networking equipment or industrial automation systems.

45 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J8 by Integrated Device Technology

71342SA55J8

Integrated Device Technology

71342SA55J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade devices.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF8 by Integrated Device Technology

71342SA55PF8

Integrated Device Technology

Integrated Device Technology's 71342SA55PF8 is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package, suitable for commercial temperature grades. Ideal for applications requiring fast and reliable asynchronous memory operations in a compact form factor.

55 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J8 by Integrated Device Technology

71342SA70J8

Integrated Device Technology

71342SA70J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 70ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

70 ns

SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7130LA25JI8 by Integrated Device Technology

7130LA25JI8

Integrated Device Technology

7130LA25JI8 by Integrated Device Technology is a 1KX8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7132LA25JI8 by Integrated Device Technology

7132LA25JI8

Integrated Device Technology

7132LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a chip carrier package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C0241E-15AXI by Cypress Semiconductor

CY7C0241E-15AXI

Cypress Semiconductor

CY7C0241E-15AXI by Cypress is a 4Kx18 MULTI-PORT SRAM with 15ns access time, operating at -40 to 85°C. It has a supply voltage of 5V and consumes up to 305mA. Ideal for industrial applications requiring fast and reliable memory storage in a compact FLATPACK package.

15 ns

COMMON

S-PQFP-G100

e4

14 mm

73728 bit

MULTI-PORT SRAM

18

3

1

2

100

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

QUAD

40

14 mm

CY7C0853V-133BBC by Cypress Semiconductor

CY7C0853V-133BBC

Cypress Semiconductor

CY7C0853V-133BBC by Cypress Semiconductor is a 256Kx36 SRAM with synchronous operation at 133MHz. It features a low profile grid array package and operates at 3.3V, making it ideal for high-speed memory applications in commercial-grade devices. With a memory density of 9437184 bits and fast access time of 4.7ns, it offers efficient parallel data processing capabilities.

4.7 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

S-PBGA-B172

e0

15 mm

9437184 bit

MULTI-PORT SRAM

36

3

1

2

172

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA172,14X14,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

220

3.3

Not Qualified

1.25 mm

.075 Amp

3.14 V

SRAMs

400 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

71321LA55JI by Integrated Device Technology

71321LA55JI

Integrated Device Technology

71321LA55JI by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. Ideal for industrial applications, it features a square package shape, CMOS technology, and asynchronous operation mode.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20J by Integrated Device Technology

71342LA20J

Integrated Device Technology

71342LA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF by Integrated Device Technology

71342LA20PF

Integrated Device Technology

71342LA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns in commercial temperature grade applications. Its low profile flatpack package with gull wing terminals makes it suitable for space-constrained designs requiring fast parallel data processing.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25JI by Integrated Device Technology

71342LA25JI

Integrated Device Technology

71342LA25JI by Integrated Device Technology is a 4Kx8 multi-port SRAM chip with 3-STATE output, operating at 5V. It features an access time of 25ns and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring fast and reliable memory storage in various electronic devices.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25J by Integrated Device Technology

71342LA25J

Integrated Device Technology

71342LA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 25ns and features an asynchronous mode suitable for commercial applications. With a package style of CHIP CARRIER, this SRAM has a terminal pitch of 1.27mm and is designed for surface mount usage.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PFI by Integrated Device Technology

71342LA25PFI

Integrated Device Technology

71342LA25PFI by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 32768 bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 25 ns. Ideal for applications requiring fast and reliable data storage in industrial environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25PF by Integrated Device Technology

71342LA25PF

Integrated Device Technology

71342LA25PF by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bit. It operates at an asynchronous mode with a max access time of 25 ns. This multi-port SRAM is ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J by Integrated Device Technology

71342LA35J

Integrated Device Technology

71342LA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF by Integrated Device Technology

71342LA35PF

Integrated Device Technology

71342LA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile FLATPACK package. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA45J by Integrated Device Technology

71342LA45J

Integrated Device Technology

71342LA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 45 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55J by Integrated Device Technology

71342LA55J

Integrated Device Technology

71342LA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can operate in asynchronous mode. Ideal for applications requiring fast memory access and common I/O type in commercial temperature environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA55PF by Integrated Device Technology

71342LA55PF

Integrated Device Technology

71342LA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with a max access time of 55 ns. It operates at a nominal voltage of 5V and has a package style of FLATPACK, LOW PROFILE. This SRAM is commonly used in applications that require fast and reliable memory storage.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA70J by Integrated Device Technology

71342LA70J

Integrated Device Technology

71342LA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 70ns and features a temperature grade of COMMERCIAL. Ideal for applications requiring fast and reliable data storage in commercial-grade electronic devices.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

200 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20J by Integrated Device Technology

71342SA20J

Integrated Device Technology

71342SA20J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a square plastic/epoxy package and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA20PF by Integrated Device Technology

71342SA20PF

Integrated Device Technology

71342SA20PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 8-bit memory width. Operating at 5V, it offers a max access time of 20ns and features an asynchronous mode suitable for commercial applications. The package style is flatpack, low profile with a square shape and gull wing terminal form.

20 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA25J by Integrated Device Technology

71342SA25J

Integrated Device Technology

71342SA25J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time and operates at 5V. It features a square chip carrier package, CMOS technology, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA25PF by Integrated Device Technology

71342SA25PF

Integrated Device Technology

71342SA25PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

280 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA35J by Integrated Device Technology

71342SA35J

Integrated Device Technology

71342SA35J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 35ns access time and operates at 5V. It features a square chip carrier package, suitable for applications requiring fast and reliable memory storage in commercial-grade devices. With common I/O type and 3-STATE output characteristics, it offers parallel data transfer capabilities for various electronic systems.

35 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA35PF by Integrated Device Technology

71342SA35PF

Integrated Device Technology

71342SA35PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 35ns and features a low profile flatpack package style. Ideal for applications requiring fast data access in commercial temperature environments.

35 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA45J by Integrated Device Technology

71342SA45J

Integrated Device Technology

71342SA45J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 45ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

45 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55J by Integrated Device Technology

71342SA55J

Integrated Device Technology

71342SA55J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 55ns access time, operating at 5V. It features a 3-STATE output and supports parallel operation. Ideal for applications requiring fast and efficient memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342SA55PF by Integrated Device Technology

71342SA55PF

Integrated Device Technology

71342SA55PF by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342SA70J by Integrated Device Technology

71342SA70J

Integrated Device Technology

71342SA70J by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 4096 words, operating at 5V. It features a max access time of 70ns and offers a memory density of 32768 bits. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

70 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.015 Amp

4.5 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

DS2045W-100 by Maxim Integrated

DS2045W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 256; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

100 ns

S-PBGA-B256

27 mm

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

256

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

PARALLEL

NOT SPECIFIED

Not Qualified

8.72 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1.27 mm

BOTTOM

NOT SPECIFIED

27 mm

CY7C025-25AXC by Cypress Semiconductor

CY7C025-25AXC

Cypress Semiconductor

CY7C025-25AXC by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

250 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C025-25AXI by Cypress Semiconductor

CY7C025-25AXI

Cypress Semiconductor

CY7C025-25AXI by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for industrial applications requiring fast and reliable memory storage.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C0830AV-133AI by Cypress Semiconductor

CY7C0830AV-133AI

Cypress Semiconductor

CY7C0830AV-133AI by Cypress Semiconductor is a 64KX18 SRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, 120 terminals in a flatpack package, and supports parallel interface. Ideal for industrial applications requiring fast access time and low power consumption.

4 ns

PIPELINED ARCHITECTURE

COMMON

S-PQFP-G120

e0

14 mm

1179648 bit

MULTI-PORT SRAM

18

3

1

2

120

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP120,.63SQ,16

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.075 Amp

3.14 V

SRAMs

300 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.4 mm

QUAD

14 mm

CY7C131-55JXC by Cypress Semiconductor

CY7C131-55JXC

Cypress Semiconductor

CY7C131-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131-55JXI by Cypress Semiconductor

CY7C131-55JXI

Cypress Semiconductor

CY7C131-55JXI by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C09089V-12AXC by Cypress Semiconductor

CY7C09089V-12AXC

Cypress Semiconductor

CY7C09089V-12AXC by Cypress is a 64KX8 SRAM with 50 MHz clock frequency, 25 ns access time, and 3.3 V supply voltage. Ideal for applications requiring fast synchronous memory operations in commercial-grade devices.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00025 Amp

3.14 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm