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SQUARE SRAM 114

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C135-15JXC by Cypress Semiconductor

CY7C135-15JXC

Cypress Semiconductor

CY7C135-15JXC by Cypress Semiconductor is a 4Kx8 SRAM with 4096 words, 8-bit memory width, and 15ns access time. It operates at 5V, has a max supply voltage of 5.5V, and is ideal for commercial applications requiring fast and reliable parallel memory storage.

15 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C135-25JXC by Cypress Semiconductor

CY7C135-25JXC

Cypress Semiconductor

CY7C135-25JXC by Cypress Semiconductor is a 4Kx8 SRAM chip with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade devices.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

180 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136-55NXC by Cypress Semiconductor

CY7C136-55NXC

Cypress Semiconductor

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: QFP; Package Shape: SQUARE; Maximum Standby Current: .015 Amp;

55 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.45 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

QUAD

20

10 mm

CY7C008V-25AXC by Cypress Semiconductor

CY7C008V-25AXC

Cypress Semiconductor

CY7C008V-25AXC by Cypress Semiconductor is a 64KX8 SRAM with 3.3V supply, operating at 0-70 °C. It features 25 ns access time, 0.5 mm terminal pitch, and GULL WING terminals. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00005 Amp

3 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

7140LA100PF8 by Integrated Device Technology

7140LA100PF8

Integrated Device Technology

7140LA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with a memory density of 8192 bit. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140LA55PF8 by Integrated Device Technology

7140LA55PF8

Integrated Device Technology

7140LA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. It operates at a max access time of 55ns and has a supply voltage range of 4.5V to 5.5V, making it ideal for applications requiring fast and reliable data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7140SA55PF8 by Integrated Device Technology

7140SA55PF8

Integrated Device Technology

7140SA55PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile flatpack package style. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA25PFI8 by Integrated Device Technology

71421LA25PFI8

Integrated Device Technology

71421LA25PFI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 64 terminals in a flatpack package, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA55JI8 by Integrated Device Technology

71421LA55JI8

Integrated Device Technology

71421LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7142LA25JI8 by Integrated Device Technology

7142LA25JI8

Integrated Device Technology

7142LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact form factor.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C131-55JXIT by Cypress Semiconductor

CY7C131-55JXIT

Cypress Semiconductor

CY7C131-55JXIT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CYDM128B16-55BVXI by Cypress Semiconductor

CYDM128B16-55BVXI

Cypress Semiconductor

CYDM128B16-55BVXI by Cypress Semiconductor is a 8KX16 MULTI-PORT SRAM with 55 ns access time, operating at 1.8/3 V. It features a very thin profile GRID ARRAY package suitable for industrial applications. This CMOS technology memory device has 100 terminals in a square shape, making it ideal for high-speed parallel operations.

55 ns

ALSO OPERATES AT 2.5V AND 3V SUPPLY

COMMON

S-PBGA-B100

e1

6 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA100,10X10,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8/3

Not Qualified

1 mm

.000006 Amp

1.7 V

SRAMs

60 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

20

6 mm

CYD36S36V18-200BGXC by Cypress Semiconductor

CYD36S36V18-200BGXC

Cypress Semiconductor

CYD36S36V18-200BGXC by Cypress Semiconductor is a 1MX36 SRAM with 200 MHz clock frequency, 3-STATE output, and 1.5/1.8 V supplies. Ideal for high-speed data buffering applications due to its synchronous operation and common I/O type in a square package with 484 terminals.

3.3 ns

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

200 MHz

COMMON

S-PBGA-B484

e1

27 mm

37748736 bit

MULTI-PORT SRAM

36

3

1

2

484

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA484,22X22,40

SQUARE

GRID ARRAY

PARALLEL

260

1.5/1.8

Not Qualified

2.46 mm

.59 Amp

1.4 V

SRAMs

1500 mA

1.58 V

1.42 V

1.5

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

20

27 mm

7008L20JI by Integrated Device Technology

7008L20JI

Integrated Device Technology

7008L20JI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

20 ns

COMMON

S-PQCC-J84

e0

29.3116 mm

524288 bit

MULTI-PORT SRAM

8

1

1

2

84

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.3116 mm

7008L20PFI by Integrated Device Technology

7008L20PFI

Integrated Device Technology

7008L20PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a low profile FLATPACK package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable parallel memory storage. With 3-STATE output characteristics and common I/O type, it offers high performance in an asynchronous mode.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI by Integrated Device Technology

7008S55PFI

Integrated Device Technology

7008S55PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

CY7C131E-55JXCT by Cypress Semiconductor

CY7C131E-55JXCT

Cypress Semiconductor

CY7C131E-55JXCT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

71V30L25TFI by Renesas Electronics

71V30L25TFI

Renesas Electronics

MULTI-PORT SRAM; No. of Terminals: 64; Package Code: LFQFP; Package Shape: SQUARE; Length: 10 mm; Maximum Operating Temperature: 85 Cel;

25 ns

COMMON

S-PQFP-G64

10 mm

8192 bit

MULTI-PORT SRAM

8

1

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

YES

PLASTIC/EPOXY

LFQFP

QFP64,.47SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

1.6 mm

3.6 V

3 V

3.3

YES

CMOS

GULL WING

.5 mm

QUAD

10 mm