Loading...

SQUARE Other Function Memory ICs 33

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
MTFC2GMTEA-WT by Micron Technology

MTFC2GMTEA-WT

Micron Technology

MTFC2GMTEA-WT by Micron Technology is a 153-terminal memory IC with 17179869184 bit density. It operates b/w -25°C to 85°C, supporting power supplies of 1.8/3.3V and 3/3.3V. This square-shaped, surface-mountable IC in plastic/epoxy package is ideal for various applications requiring high memory capacity and temperature resilience.

S-PBGA-B153

17179869184 bit

153

85 Cel

-25 Cel

PLASTIC/EPOXY

FBGA

BGA153,14X14,20

SQUARE

GRID ARRAY, FINE PITCH

1.8/3.3,3/3.3

Not Qualified

Other Memory ICs

YES

OTHER

BALL

.5 mm

BOTTOM

MTFC4GMTEA-WT by Micron Technology

MTFC4GMTEA-WT

Micron Technology

Other Memory ICs; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: FBGA; Package Shape: SQUARE; Maximum Operating Temperature: 85 Cel;

S-PBGA-B153

34359738368 bit

153

85 Cel

-25 Cel

PLASTIC/EPOXY

FBGA

BGA153,14X14,20

SQUARE

GRID ARRAY, FINE PITCH

1.8/3.3,3/3.3

Not Qualified

Other Memory ICs

YES

OTHER

BALL

.5 mm

BOTTOM

MR256D08BMA45 by Everspin Technologies

MR256D08BMA45

Everspin Technologies

MR256D08BMA45 by Everspin Technologies is a 32KX8 memory circuit with a density of 262144 bits. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 45ns. This memory IC is suitable for various applications requiring high-speed data storage and retrieval.

45 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.008 Amp

Other Memory ICs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

40

8 mm

MR256A08BCMA35R by Everspin Technologies

MR256A08BCMA35R

Everspin Technologies

MR256A08BCMA35R by Everspin Technologies is a 32KX8 MEMORY CIRCUIT with 262144 bit Memory Density. Operating at 3.3V, it has a Max Access Time of 35ns and Industrial Temperature Grade. Suitable for applications requiring low profile, fine pitch GRID ARRAY packages in industrial environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BCMA35 by Everspin Technologies

MR256A08BCMA35

Everspin Technologies

MR256A08BCMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for industrial applications requiring low profile, fine pitch package style and asynchronous operation.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

3

1

48

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

8 mm

MR256A08BMA35R by Everspin Technologies

MR256A08BMA35R

Everspin Technologies

MR256A08BMA35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for applications requiring low profile, fine pitch grid array packages in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BMA35 by Everspin Technologies

MR256A08BMA35

Everspin Technologies

MR256A08BMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for commercial applications requiring low profile, fine pitch grid array package style.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR0A16AMA35R by Everspin Technologies

MR0A16AMA35R

Everspin Technologies

MR0A16AMA35R by Everspin Technologies is a 64KX16 memory IC with 1048576 bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package style. Ideal for applications requiring fast asynchronous memory with high capacity in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

16

1

48

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.012 Amp

SRAMs

155 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

CC2544RHBT by Texas Instruments

CC2544RHBT

Texas Instruments

The Texas Instruments CC2544RHBT is a square chip carrier with a clock frequency of 2496 MHz, suitable for automotive applications. Operating temperature ranges from -40 to 125°C, with supply voltage ranging from 2V to 3.6V. Ideal for memory circuits requiring high-speed performance in compact designs.

2496 MHz

S-PQCC-N32

e4

5 mm

MEMORY CIRCUIT

3

125 Cel

-40 Cel

PLASTIC/EPOXY

HVQCCN

LCC32,.2SQ,20

SQUARE

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

260

1 mm

3.6 V

2 V

YES

AUTOMOTIVE

NICKEL PALLADIUM GOLD SILVER

NO LEAD

.5 mm

QUAD

30

5 mm

MR2A16AVMA35R by Everspin Technologies

MR2A16AVMA35R

Everspin Technologies

MR2A16AVMA35R by Everspin Technologies is a 256Kx16 memory IC with CMOS technology. It operates asynchronously at a nominal voltage of 3.3V, suitable for industrial applications. This low-profile, fine-pitch grid array package has 48 terminals and offers a memory density of 4,194,304 bits.

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

1.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

CY8C20140-LDX2I by Cypress Semiconductor

CY8C20140-LDX2I

Cypress Semiconductor

CY8C20140-LDX2I by Cypress Semiconductor is a 2KX1 MEMORY CIRCUIT IC with SYNCHRONOUS operation, suitable for INDUSTRIAL applications. It operates at 3V, has 16 terminals in a SQUARE package style, and can withstand temperatures from -40 to 85 °C.

SRAM IS ORGANISED AS 512MB

S-XQCC-N16

e4

3 mm

2048 bit

MEMORY CIRCUIT

1

3

1

16

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

UNSPECIFIED

VQCCN

SQUARE

CHIP CARRIER, VERY THIN PROFILE

260

Not Qualified

.6 mm

5.25 V

2.4 V

3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

QUAD

20

3 mm

MR2A16ACMA35 by Everspin Technologies

MR2A16ACMA35

Everspin Technologies

MR2A16ACMA35 by Everspin: 256KX16 memory IC with 35ns access time, operates at 3.3V. Suitable for industrial applications, features low profile grid array package and CMOS technology.

35 ns

S-PBGA-B48

8 mm

4194304 bit

MEMORY CIRCUIT

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.028 Amp

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

8 mm

MR0A08BMA35 by Everspin Technologies

MR0A08BMA35

Everspin Technologies

Everspin Technologies' MR0A08BMA35 is a 128Kx8 memory IC with 1048576-bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package suitable for commercial applications.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

8 mm

DSM2180F3-90T6 by STMicroelectronics

DSM2180F3-90T6

STMicroelectronics

DSM2180F3-90T6 from STMicroelectronics is a 128Kx8 asynchronous memory IC with a supply voltage range of 4.5V to 5.5V. It features a compact flatpack design and operates in industrial temperatures from -40 °C to 85°C. Ideal for various electronic applications, it ensures reliable performance in demanding environments.

S-PQFP-G52

e4

10 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2180F3V-15K6 by STMicroelectronics

DSM2180F3V-15K6

STMicroelectronics

DSM2180F3V-15K6 by STMicroelectronics is a 128Kx8 asynchronous memory IC designed for industrial applications. It operates at a nominal voltage of 3.3V, with a temperature range of -40 °C to 85°C. This surface-mount chip carrier features a compact square design and offers high-density storage in a robust package.

S-PQCC-J52

e3

19.1262 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

DSM2180F3V-15T6 by STMicroelectronics

DSM2180F3V-15T6

STMicroelectronics

DSM2180F3V-15T6 from STMicroelectronics is a 128Kx8 CMOS memory IC designed for industrial applications. It operates asynchronously with a supply voltage range of 3-3.6V and features a compact flatpack design. With a max temp of 85 °C, it ensures reliability in demanding environments.

S-PQFP-G52

e4

10 mm

1048576 bit

MEMORY CIRCUIT

8

1

52

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2190F4V-15K6 by STMicroelectronics

DSM2190F4V-15K6

STMicroelectronics

DSM2190F4V-15K6 by STMicroelectronics is a 256Kx8 asynchronous memory IC designed for industrial applications. It operates at a nominal voltage of 3.3V, with a temperature range from -40 °C to 85°C. This surface-mount chip carrier features a compact square design and offers high-density storage in various electronic devices.

ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY

S-PQCC-J52

e3

19.1262 mm

2097152 bit

MEMORY CIRCUIT

8

1

52

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

19.1262 mm

DSM2190F4V-15T6 by STMicroelectronics

DSM2190F4V-15T6

STMicroelectronics

DSM2190F4V-15T6 by STMicroelectronics is a 256Kx8 asynchronous memory IC with a supply voltage range of 3.0-3.6V. It features a compact flatpack design, operates in industrial temperatures (-40 °C to 85°C), and supports surface mount applications. Ideal for various electronic devices requiring reliable memory solutions.

ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY

S-PQFP-G52

e4

10 mm

2097152 bit

MEMORY CIRCUIT

8

1

52

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QFP

SQUARE

FLATPACK

Not Qualified

2.35 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

10 mm

DSM2150F5V-12T6 by STMicroelectronics

DSM2150F5V-12T6

STMicroelectronics

DSM2150F5V-12T6 by STMicroelectronics is a 256Kx16 asynchronous memory IC with a supply voltage range of 3.0-3.6V, ideal for industrial applications. It features a compact flatpack design and operates in temperatures from -40 °C to 85°C. This CMOS device supports surface mount technology with a fine pitch terminal layout.

ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY

S-PQFP-G80

e3/e4

12 mm

4194304 bit

MEMORY CIRCUIT

16

1

80

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TFQFP

SQUARE

FLATPACK, THIN PROFILE, FINE PITCH

NOT SPECIFIED

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

.5 mm

QUAD

NOT SPECIFIED

12 mm

XCCACEM16BG388I by Xilinx

XCCACEM16BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; Parallel or Serial: SERIAL;

20

1000000 Write/Erase Cycles

S-PBGA-B388

35 mm

16777216 bit

MEMORY CIRCUIT

16

1

1

388

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

XCCACEM32BG388I by Xilinx

XCCACEM32BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

20

1000000 Write/Erase Cycles

S-PBGA-B388

e0

35 mm

33554432 bit

MEMORY CIRCUIT

16

1

1

388

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

XCCACEM64BG388I by Xilinx

XCCACEM64BG388I

Xilinx

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 388; Package Code: BGA; Package Shape: SQUARE; JESD-609 Code: e0;

133 MHz

1000000 Write/Erase Cycles

S-PBGA-B388

e0

35 mm

67108864 bit

MEMORY CIRCUIT

16

1

388

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA388,26X26,50

SQUARE

GRID ARRAY

SERIAL

1.8,3.3

Not Qualified

2.87 mm

Flash Memories

240 mA

1.89 V

1.71 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1.27 mm

BOTTOM

NOR TYPE

35 mm

MT29C4G48MAZAPAKQ-5IT by Micron Technology

MT29C4G48MAZAPAKQ-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; JESD-609 Code: e1;

S-PBGA-B168

e1

12 mm

2097152 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

.75 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT29C2G48MAKLCJI-6IT by Micron Technology

MT29C2G48MAKLCJI-6IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm;

S-PBGA-B168

e1

12 mm

2097152 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

1.1 mm

Other Memory ICs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT29C4G96MAZBBCJV-48IT by Micron Technology

MT29C4G96MAZBBCJV-48IT

Micron Technology

MEMORY CIRCUIT; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Package Body Material: PLASTIC/EPOXY;

IT IS ALSO HAVING 4GBIT (X 32) LPDDR

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+LPDDR

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT29C4G48MAZBBAKB-48IT by Micron Technology

MT29C4G48MAZBBAKB-48IT

Micron Technology

Micron Technology's MT29C4G48MAZBBAKB-48IT is a 256MX16 FLASH+LPDDR memory IC with 4294967296 bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with limited space and power constraints.

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+LPDDR

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C8G96MAZBBDJV-48IT by Micron Technology

MT29C8G96MAZBBDJV-48IT

Micron Technology

MEMORY CIRCUIT; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Additional Features: IT IS ALSO HAVING 4GBIT (X 32) LPDDR;

IT IS ALSO HAVING 4GBIT (X 32) LPDDR

S-PBGA-B168

12 mm

8589934592 bit

MEMORY CIRCUIT

16

FLASH+LPDDR

1

168

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

M39L0R8090U3ZE6E by Micron Technology

M39L0R8090U3ZE6E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 133; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

S-PBGA-B133

8 mm

536870912 bit

MEMORY CIRCUIT

16

1

133

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

8 mm

MT43A4G40200NFA-S15:A by Micron Technology

MT43A4G40200NFA-S15:A

Micron Technology

Micron Technology's MT43A4G40200NFA-S15:A is a 4GX4 memory IC with 17179869184 bit density. Operating at 1.2V, it features synchronous mode and 896 terminals in a square GRID ARRAY package. Ideal for applications requiring high memory capacity and fast data processing in electronic devices.

IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE

S-PBGA-B896

31 mm

17179869184 bit

MEMORY CIRCUIT

4

1

896

4294967296 words

4G

SYNCHRONOUS

105 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

NOT SPECIFIED

4.2 mm

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

31 mm

MT29C4G96MAZBACJG-5WT by Micron Technology

MT29C4G96MAZBACJG-5WT

Micron Technology

MT29C4G96MAZBACJG-5WT by Micron Technology is a 256MX16 Synchronous Flash+SDRAM memory IC with 4294967296 bit density. Operating at 1.8V, it offers a max access time of 25ns and is ideal for applications requiring high-speed data processing in compact electronic devices.

25 ns

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

.9 mm

Other Memory ICs

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C4G48MAZBAAKQ-5WT by Micron Technology

MT29C4G48MAZBAAKQ-5WT

Micron Technology

Micron Technology's MT29C4G48MAZBAAKQ-5WT is a 256MX16 memory IC with 4294967296-bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with very thin profile and fine pitch package style.

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.75 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C4G96MAZBACJG-5IT by Micron Technology

MT29C4G96MAZBACJG-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX16;

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.9 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C8G96MAZBADJV-5IT by Micron Technology

MT29C8G96MAZBADJV-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

8589934592 bit

MEMORY CIRCUIT

16

1

168

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm