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Everspin Technologies MRAMs 11

MRAMs
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Minimum Data Retention Time Endurance JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width Maximum Write Cycle Time (tWC)
MR25H40CDCR by Everspin Technologies

MR25H40CDCR

Everspin Technologies

MR25H40CDCR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating from -40 to 85°C. It features synchronous operation, small outline package, and industrial temperature grade. Ideal for applications requiring fast non-volatile memory with high endurance and reliability.

R-PDSO-N8

6 mm

4194304 bit

MRAM

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

1.05 mm

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

5 mm

MR4A08BCYS35R by Everspin Technologies

MR4A08BCYS35R

Everspin Technologies

Everspin Technologies' MR4A08BCYS35R is a 2MX8 MRAM with 3.3V supply, operating at -40 to 85 °C. It features a small outline package, parallel interface, and 35ns access time. Ideal for industrial applications requiring fast non-volatile memory with high endurance and low power consumption.

35 ns

20

R-PDSO-G44

18.41 mm

16777216 bit

MRAM

8

3

1

44

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

.000035 ms

MR4A08BYS35R by Everspin Technologies

MR4A08BYS35R

Everspin Technologies

Everspin Technologies' MR4A08BYS35R is a 2MX8 MRAM with 3.3V supply, operating at -40 to 70°C. It features a small outline package, GULL WING terminals, and parallel interface. Ideal for applications requiring fast access times and high reliability in commercial temperature environments.

35 ns

20

R-PDSO-G44

18.41 mm

16777216 bit

MRAM

8

1

44

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

.000035 ms

MR4A08BYS35 by Everspin Technologies

MR4A08BYS35

Everspin Technologies

Everspin Technologies' MR4A08BYS35 is a 3.3V MRAM with 2MX8 organization, operating in parallel mode. It offers fast access time of 35ns and low standby current of 0.009Amp. Ideal for applications requiring high-speed non-volatile memory with reliable data retention capabilities.

35 ns

20

R-PDSO-G44

18.41 mm

16777216 bit

MRAM

8

1

44

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

.000035 ms

MR25H40MDFR by Everspin Technologies

MR25H40MDFR

Everspin Technologies

MR25H40MDFR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 125 °C. It features synchronous operation, small outline package, and AEC-Q100 screening level. Ideal for automotive applications requiring fast and reliable non-volatile memory solutions.

R-PDSO-N8

6 mm

4194304 bit

MRAM

8

3

1

8

524288 words

512K

SYNCHRONOUS

125 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

3.3

Not Qualified

AEC-Q100

.9 mm

SRAMs

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

5 mm

MR25H40VDFR by Everspin Technologies

MR25H40VDFR

Everspin Technologies

MR25H40VDFR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 105 °C. It features synchronous mode, small outline package, and CMOS technology. Ideal for industrial applications requiring fast non-volatile memory with 4194304-bit density.

R-PDSO-N8

6 mm

4194304 bit

MRAM

8

3

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

3.3

Not Qualified

.9 mm

SRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

MR4A16BCMA35R by Everspin Technologies

MR4A16BCMA35R

Everspin Technologies

Everspin Technologies' MR4A16BCMA35R is a 1MX16 MRAM with 3.3V supply, 35ns access time, and 1M words code. It is used in industrial applications requiring fast, non-volatile memory with low power consumption and high reliability.

35 ns

20

S-PBGA-B48

10 mm

16777216 bit

MRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

10 mm

.000035 ms

MR4A16BUYS45 by Everspin Technologies

MR4A16BUYS45

Everspin Technologies

Everspin Technologies' MR4A16BUYS45 is a 1MX16 MRAM with 3.3V supply voltage, 125°C operating temp, and 45ns access time. Ideal for automotive applications due to its small outline package and high memory density of 16Mbit. Offers fast write cycle time of 0.000045ms and low standby current of 0.009A for efficient data retention.

45 ns

20

R-PDSO-G54

22.22 mm

16777216 bit

MRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

1.2 mm

.009 Amp

3 V

180 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

.8 mm

DUAL

10.16 mm

.000045 ms

MR5A16ACYS35R by Everspin Technologies

MR5A16ACYS35R

Everspin Technologies

MR5A16ACYS35R by Everspin Technologies is a 2MX16 MRAM with 3V supply voltage, 85°C max temp, and 35ns access time. Ideal for applications requiring fast, non-volatile memory storage in compact devices due to its small outline and thin profile package style.

35 ns

20

R-PDSO-G54

22.22 mm

33554432 bit

MRAM

16

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

1.2 mm

.018 Amp

3 V

180 mA

3.6 V

3 V

3.3

YES

CMOS

GULL WING

.8 mm

DUAL

10.16 mm

.000035 ms

MR5A16ACMA35R by Everspin Technologies

MR5A16ACMA35R

Everspin Technologies

MR5A16ACMA35R by Everspin Technologies is a 2MX16 MRAM with 3.3V supply, 35ns access time, and 33554432-bit memory density. It is ideal for applications requiring fast, non-volatile memory solutions in a compact grid array package with low profile design.

35 ns

20

S-PBGA-B48

10 mm

33554432 bit

MRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.35 mm

.018 Amp

3 V

180 mA

3.6 V

3 V

3.3

YES

CMOS

BALL

.75 mm

BOTTOM

10 mm

.000035 ms

MR5A16AUMA45R by Everspin Technologies

MR5A16AUMA45R

Everspin Technologies

Everspin Technologies' MR5A16AUMA45R is a 2MX16 MRAM with 3V supply voltage, operating at -40 to 125 °C. It features a low profile grid array package, 0.75mm terminal pitch, and 45ns access time. Ideal for applications requiring fast, non-volatile memory with high endurance and reliability.

45 ns

20

S-PBGA-B48

10 mm

33554432 bit

MRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.35 mm

.018 Amp

3 V

180 mA

3.6 V

3 V

3.3

YES

CMOS

BALL

.75 mm

BOTTOM

10 mm

.000045 ms