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AUTOMOTIVE Flash Memory 35

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M29W800FB70ZA3SE by Micron Technology

M29W800FB70ZA3SE

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

M29W800FT70ZA3SE by Micron Technology

M29W800FT70ZA3SE

Micron Technology

M29W800FT70ZA3SE by Micron Technology is a 512KX16 Flash Memory with an operating mode of asynchronous and a max access time of 70 ns. It is commonly used in automotive applications due to its temperature grade and thin profile package style.

70 ns

TOP BOOT BLOCK

8

TOP

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

M25P80-VMN3PB by Micron Technology

M25P80-VMN3PB

Micron Technology

M25P80-VMN3PB by Micron Technology is a NOR flash memory with 8MX1 organization, 8388608-bit memory density, and SPI serial bus type. It operates at 75 MHz clock frequency and is suitable for automotive applications due to AEC-Q100 screening level. With 100000 write/erase cycles endurance, it offers reliable data storage in a compact small outline package.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

125 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

AEC-Q100

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

15 ms

HARDWARE/SOFTWARE

M29W256GH70N3E by Micron Technology

M29W256GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G56;

70 ns

8

BOTTOM/TOP

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

125 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

14 mm

M25P16-VMN3PB by Micron Technology

M25P16-VMN3PB

Micron Technology

M25P16-VMN3PB by Micron Technology is a 2MX8 NOR type flash memory with 16777216 bit density. It operates at 75 MHz clock frequency, has 100000 write/erase cycles endurance, and uses SPI serial bus. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P16-VMN3TPB by Micron Technology

M25P16-VMN3TPB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

N25Q064A11ESEA0F by Micron Technology

N25Q064A11ESEA0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;

108 MHz

S-PDSO-G8

5.285 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

125 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.285 mm

N25Q512A83G12A0F by Micron Technology

N25Q512A83G12A0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

M25P32-VMW3GB by Micron Technology

M25P32-VMW3GB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Organization: 4MX8;

75 MHz

S-PDSO-G8

5.285 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

260

2.7

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

30

5.285 mm

M25P16-VMN3YPB by Micron Technology

M25P16-VMN3YPB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M29W512GH70N3E by Micron Technology

M29W512GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

80 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

M29F400BB70N3T by STMicroelectronics

M29F400BB70N3T

STMicroelectronics

M29F400BB70N3T from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for automotive applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F200BB50N3 by STMicroelectronics

M29F200BB50N3

STMicroelectronics

M29F200BB50N3 from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, ideal for automotive applications. It features a max access time of 50 ns, supports up to 100K write/erase cycles, and operates in asynchronous mode. Its compact SOIC package ensures efficient surface mounting.

50 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

125 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT25SF041-SSHDHR-T by Adesto Technologies

AT25SF041-SSHDHR-T

Adesto Technologies

AT25SF041-SSHDHR-T by Adesto Technologies is a 4Mbit FLASH memory IC with synchronous operation up to 85MHz. It features a small outline package, operating temperature range of -40°C to 125°C, and automotive-grade reliability. Ideal for applications requiring high-speed data transfer in harsh environments.

85 MHz

R-PDSO-G8

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

3.6 V

2.5 V

YES

CMOS

AUTOMOTIVE

GULL WING

DUAL

M29W640GB70N3E by Micron Technology

M29W640GB70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Boot Block: BOTTOM;

70 ns

8

BOTTOM

R-PDSO-G48

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

125 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

12 mm

N25Q032A13EF4A0FTR by Micron Technology

N25Q032A13EF4A0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

R-PDSO-N8

4 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.6 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

NO LEAD

.8 mm

DUAL

NOR TYPE

3 mm

IS25WP512M-RHLA3 by Integrated Silicon Solution

IS25WP512M-RHLA3

Integrated Silicon Solution

IS25WP512M-RHLA3 by Integrated Silicon Solution is a 64MX8 NOR type flash memory with a density of 536870912 bit. It operates at a max clock frequency of 133 MHz and has an endurance of 100000 Write/Erase Cycles. This memory IC is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

.00026 Amp

35 mA

1.95 V

1.65 V

1.8

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

10

NOR TYPE

6 mm

HARDWARE/SOFTWARE

M29W320DB80ZA3E by Micron Technology

M29W320DB80ZA3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

80 ns

8

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

NOT SPECIFIED

6 mm

M25P16-VMF3PB by Micron Technology

M25P16-VMF3PB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

16777216 bit

FLASH

8

1

16

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

MT25QL128ABB8E12-0AUT by Micron Technology

MT25QL128ABB8E12-0AUT

Micron Technology

Micron Technology's MT25QL128ABB8E12-0AUT is a 16MX8 flash memory with 133 MHz clock frequency, suitable for automotive applications. Operating at 3V, it offers 16777216 words of memory with a density of 134217728 bits. The package style is grid array, thin profile, making it ideal for space-constrained designs.

1

133 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS25LP032D-JBLA3-TR by Integrated Silicon Solution

IS25LP032D-JBLA3-TR

Integrated Silicon Solution

IS25LP032D-JBLA3-TR by Integrated Silicon Solution is a 32Mb Flash Memory with 4Mx8 organization, operating at up to 133MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level and wide temperature range (-40°C to 125°C). Package style is small outline, suitable for surface mount with dual terminal position.

133 MHz

S-PDSO-G8

5.28 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

AEC-Q100

2.16 mm

3.6 V

2.3 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.28 mm

MT35XU02GCBA2G12-0AUT by Micron Technology

MT35XU02GCBA2G12-0AUT

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0AUT is a 256MX8 flash memory IC with 1.8V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications, it features AEC-Q100 screening level and operates in a temperature range of -40°C to 125°C.

200 MHz

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AUT by Micron Technology

MT35XU256ABA1G12-0AUT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AUT is a 256MX1 flash memory with 268Mbit density. Operating at 166MHz, it has a supply voltage range of 1.7V to 2V and supports automotive applications. With AEC-Q100 screening, this synchronous memory in grid array package offers high performance in harsh environments.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA2G12-0AUT by Micron Technology

MT35XU256ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

200 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU512ABA2G12-0AUT by Micron Technology

MT35XU512ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

200 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

SST26VF016B-80E/SN70SVAO by Microchip Technology

SST26VF016B-80E/SN70SVAO

Microchip Technology

SST26VF016B-80E/SN70SVAO by Microchip: 16MX1 NOR Flash Memory with 104 MHz clock, SPI serial bus for automotive applications. Features 100K write/erase cycles, operates at -40 to 125 °C, and has a memory density of 16777216 bits.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

1.75 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF016BT-80E/SN70SVAO by Microchip Technology

SST26VF016BT-80E/SN70SVAO

Microchip Technology

SST26VF016BT-80E/SN70SVAO by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for automotive applications with AEC-Q100 screening, -40 to 125 °C operating temp range, and 100000 write/erase cycles endurance.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3

AEC-Q100; TS 16949

1.75 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST25PF040C-40E/MF18GVAO by Microchip Technology

SST25PF040C-40E/MF18GVAO

Microchip Technology

SST25PF040C-40E/MF18GVAO by Microchip Technology is a NOR type flash memory with 512Kx8 organization, operating at 3.3V and up to 40MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level, it offers 100000 write/erase cycles and operates in a wide temperature range from -40°C to 125°C.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

125 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

AEC-Q100

.8 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

SOFTWARE

SST25PF040CT-40E/SN18GVAO by Microchip Technology

SST25PF040CT-40E/SN18GVAO

Microchip Technology

SST25PF040CT-40E/SN18GVAO by Microchip: NOR Flash Memory, 512KX8 organization, SPI serial bus type. Ideal for automotive applications with AEC-Q100 screening level, operating at -40 to 125 °C, and offering 100000 Write/Erase Cycles endurance.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

8

1

1

8

524288 words

512K

SYNCHRONOUS

125 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

AEC-Q100

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

N25Q128A13EF8A0FTR by Micron Technology

N25Q128A13EF8A0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Memory Density: 134217728 bit;

108 MHz

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

N25Q032A13ESCA0FTR by Micron Technology

N25Q032A13ESCA0FTR

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 33554432 words;

108 MHz

R-PDSO-G8

4.9 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

1.75 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

SST26VF016B-80E/SM by Microchip Technology

SST26VF016B-80E/SM

Microchip Technology

SST26VF016B-80E/SM by Microchip: 16Mx1 NOR Flash Memory with 80MHz clock, SPI serial bus for automotive applications. Features 100K write/erase cycles, operates at -40 to 125°C, and has a small outline package style.

80 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

5.26 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5

AEC-Q100

2.03 mm

SPI

.000025 Amp

25 mA

3.6 V

2.3 V

2.5

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

SST25PF040C-40E/MF by Microchip Technology

SST25PF040C-40E/MF

Microchip Technology

SST25PF040C-40E/MF by Microchip: NOR Flash Memory, 4Mx1 organization, SPI serial bus type. Operating at 3.3V with 40MHz clock frequency for automotive applications requiring high endurance and low standby current.

40 MHz

20

100000 Write/Erase Cycles

S-PDSO-N10

3 mm

4194304 bit

FLASH

1

1

1

10

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC10,.12,20

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

TS 16949

1 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

NO LEAD

.5 mm

DUAL

NOR TYPE

3 mm

SOFTWARE

SST25PF040C-40E/SN by Microchip Technology

SST25PF040C-40E/SN

Microchip Technology

SST25PF040C-40E/SN by Microchip: 3.3V NOR Flash Memory with 4Mx1 organization, SPI interface, and 40MHz clock frequency. Ideal for automotive applications due to TS16949 screening level and -40°C to 125°C operating temperature range. Compact size (4.9mm x 3.9mm) with low standby current (0.00001A).

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

3.6 V

2.3 V

3.3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

IS25WP512M-RHLA3-TR by Integrated Silicon Solution

IS25WP512M-RHLA3-TR

Integrated Silicon Solution

IS25WP512M-RHLA3-TR by Integrated Silicon Solution is a 64MX8 NOR flash memory with 112 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and supports SPI serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

112 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

.00026 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE