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INDUSTRIAL DRAM 537

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT47H64M8SH-25EAAT:H by Micron Technology

MT47H64M8SH-25EAAT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H64M8SH-25EAIT:H by Micron Technology

MT47H64M8SH-25EAIT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.2 mm

YES

4,8

.01 Amp

150 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT41K1G8SN-107IT:A by Micron Technology

MT41K1G8SN-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-125IT:A by Micron Technology

MT41K1G8SN-125IT:A

Micron Technology

Micron Technology's MT41K1G8SN-125IT:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-107IT:A by Micron Technology

MT41K512M16HA-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-125IT:A by Micron Technology

MT41K512M16HA-125IT:A

Micron Technology

MT41K512M16HA-125IT:A by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT48LC4M32B2P-6AXIT:L by Micron Technology

MT48LC4M32B2P-6AXIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10.16 mm

IS42VS16160J-75TLI by Integrated Silicon Solution

IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MT40A512M16HA-083EIT:A by Micron Technology

MT40A512M16HA-083EIT:A

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT48LC4M32B2B5-6AAIT:L by Micron Technology

MT48LC4M32B2B5-6AAIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B90;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2P-6AAAT:L by Micron Technology

MT48LC4M32B2P-6AAAT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed data processing in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G86

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M32B2P-6AAIT:L by Micron Technology

MT48LC4M32B2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AAIT:L is a 3.3V, 4MX32 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and features four bank page burst access mode, making it ideal for high-performance computing applications.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G86

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

10.16 mm

MT41K512M16HA-125AIT:A by Micron Technology

MT41K512M16HA-125AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT49H16M18CSJ-25IT:B by Micron Technology

MT49H16M18CSJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

400 MHz

SEPARATE

2,4,8

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

TBGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.5/1.8,1.8,2.5

Not Qualified

1.2 mm

.005 Amp

DRAMs

655 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M18SJ-25IT:B by Micron Technology

MT49H16M18SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H16M36SJ-18IT:B by Micron Technology

MT49H16M36SJ-18IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

e1

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

11 mm

MT49H16M36SJ-25IT:B by Micron Technology

MT49H16M36SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

36

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT49H32M18CSJ-25EIT:B by Micron Technology

MT49H32M18CSJ-25EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

603979776 bit

DDR DRAM

18

1

1

144

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

AS4C512M16D3L-12BIN by Alliance Memory

AS4C512M16D3L-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.011 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

W9812G6KH-5I by Winbond Electronics

W9812G6KH-5I

Winbond Electronics

W9812G6KH-5I by Winbond Electronics is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V and has a max access time of 4.5ns. Ideal for industrial applications requiring fast and reliable memory performance in compact spaces.

FOUR BANK PAGE BURST

4.5 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MT46V32M16P-5BXIT:J by Micron Technology

MT46V32M16P-5BXIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT48LC16M16A2P-6AAAT:G by Micron Technology

MT48LC16M16A2P-6AAAT:G

Micron Technology

MT48LC16M16A2P-6AAAT:G by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is suitable for industrial applications requiring fast and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

EDB5432BEBH-1DIT-F-D by Micron Technology

EDB5432BEBH-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEPA-1DIT-F-D by Micron Technology

EDB5432BEPA-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

EDB5432BEPA-1DIT-F-R by Micron Technology

EDB5432BEPA-1DIT-F-R

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

IS42S16400J-6TLI-TR by Integrated Silicon Solution

IS42S16400J-6TLI-TR

Integrated Silicon Solution

IS42S16400J-6TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers a memory density of 67108864 bits and supports four bank page burst access mode. Ideal for industrial applications requiring fast data processing in compact systems.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT49H8M36SJ-25IT:B by Micron Technology

MT49H8M36SJ-25IT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO REFRESH

R-PBGA-B144

18.5 mm

301989888 bit

DDR DRAM

36

1

1

144

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

11 mm

MT40A256M16GE-062EIT:B by Micron Technology

MT40A256M16GE-062EIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT40A256M16GE-075EIT:B by Micron Technology

MT40A256M16GE-075EIT:B

Micron Technology

Micron Technology's MT40A256M16GE-075EIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8RH-075EIT:B by Micron Technology

MT40A512M8RH-075EIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 10.5 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

EDB4432BBBJ-1DAIT-F-D by Micron Technology

EDB4432BBBJ-1DAIT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

R-PBGA-B134

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.75 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT41K512M8DA-107AIT:P by Micron Technology

MT41K512M8DA-107AIT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

934.57 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.011 Amp

146 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC2M32B2B5-7ITGTR by Micron Technology

MT48LC2M32B2B5-7ITGTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT47H128M16RT-25EXIT:C by Micron Technology

MT47H128M16RT-25EXIT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EXIT:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

2147483648 bit

DDR2 DRAM

16

1

1

84

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

IS43LD16640C-25BLI by Integrated Silicon Solution

IS43LD16640C-25BLI

Integrated Silicon Solution

IS43LD16640C-25BLI by Integrated Silicon Solution is a 64MX16 LPDDR2 DRAM with 1073741824 bit memory density. It operates synchronously at 1.2V, featuring self-refresh and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed and low-power memory solutions.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10

10 mm

EDB8164B4PT-1DIT-F-D by Micron Technology

EDB8164B4PT-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

12 mm

MT47H64M16HR-3IT:HTR by Micron Technology

MT47H64M16HR-3IT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-3IT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access times in industrial environments.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT46V32M16P-5BAIT:J by Micron Technology

MT46V32M16P-5BAIT:J

Micron Technology

Micron Technology's MT46V32M16P-5BAIT:J is a DDR1 DRAM with 32MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in a compact small outline package.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT40A256M16GE-075EAIT:B by Micron Technology

MT40A256M16GE-075EAIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

8

.058 Amp

1.14 V

72 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8RH-075EAAT:B by Micron Technology

MT40A512M8RH-075EAAT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.06 Amp

1.14 V

61 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8RH-075EAIT:B by Micron Technology

MT40A512M8RH-075EAIT:B

Micron Technology

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

.058 Amp

1.14 V

59 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT42L32M16D1FE-25IT:A by Micron Technology

MT42L32M16D1FE-25IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 121; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

FOUR BANK PAGE BURST

SELF REFRESH

R-PBGA-B121

e1

8 mm

536870912 bit

LPDDR2 DRAM

16

1

1

121

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

6.5 mm

MT46H32M16LFBF-6IT:CTR by Micron Technology

MT46H32M16LFBF-6IT:CTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H128M32L2KQ-5IT:BTR by Micron Technology

MT46H128M32L2KQ-5IT:BTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46V16M16CY-6IT:KTR by Micron Technology

MT46V16M16CY-6IT:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 16MX16;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT48LC2M32B2TG-7IT:GTR by Micron Technology

MT48LC2M32B2TG-7IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Position: DUAL;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC8M16A2B4-75IT:GTR by Micron Technology

MT48LC8M16A2B4-75IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 16;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2P-7EIT:GTR by Micron Technology

MT48LC8M16A2P-7EIT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm